%0 Journal Article
	%A Priyanka Malik A and  Rishu Chaujar B and  Mridula Gupta C and  R.S. Gupta D
	%D 2010
	%J International Journal of Electronics and Communication Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 40, 2010
	%T Two-dimensional Analytical Drain Current Model for Multilayered-Gate Material Engineered Trapezoidal Recessed Channel(MLGME-TRC) MOSFET: a Novel Design
	%U https://publications.waset.org/pdf/6264
	%V 40
	%X In this paper, for the first time, a two-dimensional
(2D) analytical drain current model for sub-100 nm multi-layered
gate material engineered trapezoidal recessed channel (MLGMETRC)
MOSFET: a novel design is presented and investigated using
ATLAS and DEVEDIT device simulators, to mitigate the large gate
leakages and increased standby power consumption that arise due to
continued scaling of SiO2-based gate dielectrics. The twodimensional
(2D) analytical model based on solution of Poisson-s
equation in cylindrical coordinates, utilizing the cylindrical
approximation, has been developed which evaluate the surface
potential, electric field, drain current, switching metric: ION/IOFF
ratio and transconductance for the proposed design. A good
agreement between the model predictions and device simulation
results is obtained, verifying the accuracy of the proposed analytical
	%P 733 - 737