@article{(Open Science Index):https://publications.waset.org/pdf/11685,
	  title     = {A Novel 14 nm Extended Body FinFET for Reduced Corner Effect, Self-Heating Effect, and Increased Drain Current},
	  author    = {Cheng-Hsien Chang and  Jyi-Tsong Lin and  Po-Hsieh Lin and  Hung-Pei Hsu and  Chan-Hsiang Chang and  Ming-Tsung Shih and  Shih-Chuan Tseng and  Min-Yan Lin},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, we have proposed a novel FinFET with
extended body under the poly gate, which is called EB-FinFET, and
its characteristic is demonstrated by using three-dimensional (3-D)
numerical simulation. We have analyzed and compared it with
conventional FinFET. The extended body height dependence on the
drain induced barrier lowering (DIBL) and subthreshold swing (S.S)
have been also investigated. According to the 3-D numerical
simulation, the proposed structure has a firm structure, an acceptable
short channel effect (SCE), a reduced series resistance, an increased
on state drain current (I
on) and a large normalized I
DS. Furthermore,
the structure can also improve corner effect and reduce self-heating
effect due to the extended body. Our results show that the EBFinFET
is excellent for nanoscale device.},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {7},
	  number    = {6},
	  year      = {2013},
	  pages     = {975 - 978},
	  ee        = {https://publications.waset.org/pdf/11685},
	  url   	= {https://publications.waset.org/vol/78},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 78, 2013},