Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 37

Search results for: tunneling.

37 Comparative Analysis of Mobility Support in Mobile IP and SIP

Authors: Hasanul Ferdaus, Sazzadur Rahman, Kamrul Islam

Abstract:

With the rapid usage of portable devices mobility in IP networks becomes more important issue in the recent years. IETF standardized Mobile IP that works in Network Layer, which involves tunneling of IP packets from HA to Foreign Agent. Mobile IP suffers many problems of Triangular Routing, conflict with private addressing scheme, increase in load in HA, need of permanent home IP address, tunneling itself, and so on. In this paper, we proposed mobility management in Application Layer protocol SIP and show some comparative analysis between Mobile IP and SIP in context of mobility.

Keywords: Mobility, mobile IP, SIP, tunneling.

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36 Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

Aggressive scaling of MOS devices requires use of ultra-thin gate oxides to maintain a reasonable short channel effect and to take the advantage of higher density, high speed, lower cost etc. Such thin oxides give rise to high electric fields, resulting in considerable gate tunneling current through gate oxide in nano regime. Consequently, accurate analysis of gate tunneling current is very important especially in context of low power application. In this paper, a simple and efficient analytical model has been developed for channel and source/drain overlap region gate tunneling current through ultra thin gate oxide n-channel MOSFET with inevitable deep submicron effect (DSME).The results obtained have been verified with simulated and reported experimental results for the purpose of validation. It is shown that the calculated tunnel current is well fitted to the measured one over the entire oxide thickness range. The proposed model is suitable enough to be used in circuit simulator due to its simplicity. It is observed that neglecting deep sub-micron effect may lead to large error in the calculated gate tunneling current. It is found that temperature has almost negligible effect on gate tunneling current. It is also reported that gate tunneling current reduces with the increase of gate oxide thickness. The impact of source/drain overlap length is also assessed on gate tunneling current.

Keywords: Gate tunneling current, analytical model, gate dielectrics, non uniform poly gate doping, MOSFET, fringing field effect and image charges.

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35 Trap Assisted Tunneling Model for Gate Current in Nano Scale MOSFET with High-K Gate Dielectrics

Authors: Ashwani K. Rana, Narottam Chand, Vinod Kapoor

Abstract:

This paper presents a new compact analytical model of the gate leakage current in high-k based nano scale MOSFET by assuming a two-step inelastic trap-assisted tunneling (ITAT) process as the conduction mechanism. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semiempirical gate leakage current formulation in the BSIM 4 model. The gate tunneling currents have been calculated as a function of gate voltage for different gate dielectrics structures such as HfO2, Al2O3 and Si3N4 with EOT (equivalent oxide thickness) of 1.0 nm. The proposed model is compared and contrasted with santaurus simulation results to verify the accuracy of the model and excellent agreement is found between the analytical and simulated data. It is observed that proposed analytical model is suitable for different highk gate dielectrics simply by adjusting two fitting parameters. It was also shown that gate leakages reduced with the introduction of high-k gate dielectric in place of SiO2.

Keywords: Analytical model, High-k gate dielectrics, inelastic trap assisted tunneling, metal–oxide–semiconductor (MOS) devices.

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34 Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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33 Sewer Culvert Installation Method to Accommodate Underground Construction in an Urban Area with Narrow Streets (The Development of Shield Switching Type Micro-Tunneling Method and the Introduction of Construction Examples)

Authors: Osamu Igawa, Hiroshi Kouchiwa, Yuji Ito

Abstract:

In recent years, a reconstruction project for sewer  pipelines has been progressing in Japan with the aim of renewing old  sewer culverts. However, it is difficult to secure a sufficient base area  for shafts in an urban area because many streets are narrow with a  complex layout. As a result, construction in such urban areas is  generally very demanding.  In urban areas, there is a strong requirement for a safe, reliable and  economical construction method that does not disturb the public’s  daily life and urban activities. With this in mind, we developed a new  construction method called the “shield switching type micro-tunneling  method,” which integrates the micro-tunneling method and shield  method.  In this method, pipeline is constructed first for sections that are  gently curved or straight using the economical micro-tunneling  method, and then the method is switched to the shield method for  sections with a sharp curve or a series of curves without establishing  an intermediate shaft.  This paper provides the information, features and construction  examples of this newly developed method.

 

Keywords: Micro-tunneling method, Secondary lining applied RC segment, Sharp curve, Shield method, Switching type.

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32 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling.

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31 Some Issues with Extension of an HPC Cluster

Authors: Pil Seong Park

Abstract:

Homemade HPC clusters are widely used in many small labs, because they are easy to build and cost-effective. Even though incremental growth is an advantage of clusters, it results in heterogeneous systems anyhow. Instead of adding new nodes to the cluster, we can extend clusters to include some other Internet servers working independently on the same LAN, so that we can make use of their idle times, especially during the night. However extension across a firewall raises some security problems with NFS. In this paper, we propose a method to solve such a problem using SSH tunneling, and suggest a modified structure of the cluster that implements it.

Keywords: Extension of HPC clusters, Security, NFS, SSH tunneling.

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30 Solitons in Nonlinear Optical Lattices

Authors: Tapas Kumar Sinha, Joseph Mathew

Abstract:

Based on the Lagrangian for the Gross –Pitaevskii equation as derived by H. Sakaguchi and B.A Malomed [5] we have derived a double well model for the nonlinear optical lattice. This model explains the various features of nonlinear optical lattices. Further, from this model we obtain and simulate the probability for tunneling from one well to another which agrees with experimental results [4].

Keywords: Double well model, nonlinear optical lattice, Solitons, tunneling.

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29 Analysis of a TBM Tunneling Effect on Surface Subsidence: A Case Study from Tehran, Iran

Authors: A. R. Salimi, M. Esmaeili, B. Salehi

Abstract:

The development and extension of large cities induced a need for shallow tunnel in soft ground of building areas. Estimation of ground settlement caused by the tunnel excavation is important engineering point. In this paper, prediction of surface subsidence caused by tunneling in one section of seventh line of Tehran subway is considered. On the basis of studied geotechnical conditions of the region, tunnel with the length of 26.9km has been excavated applying a mechanized method using an EPB-TBM with a diameter of 9.14m. In this regard, settlement is estimated utilizing both analytical and numerical finite element method. The numerical method shows that the value of settlement in this section is 5cm. Besides, the analytical consequences (Bobet and Loganathan-Polous) are 5.29 and 12.36cm, respectively. According to results of this study, due tosaturation of this section, there are good agreement between Bobet and numerical methods. Therefore, tunneling processes in this section needs a special consolidation measurement and support system before the passage of tunnel boring machine.

Keywords: TBM, Subsidence, Numerical Method, Analytical Method.

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28 Engineered Cement Composite Materials Characterization for Tunneling Applications

Authors: S. Boughanem, D. A. Jesson, M. J. Mulheron, P.A. Smith C. Eddie, S. Psomas, M. Rimes

Abstract:

Cements, which are intrinsically brittle materials, can exhibit a degree of pseudo-ductility when reinforced with a sufficient volume fraction of a fibrous phase. This class of materials, called Engineered Cement Composites (ECC) has the potential to be used in future tunneling applications where a level of pseudo-ductility is required to avoid brittle failures. However uncertainties remain regarding mechanical performance. Previous work has focused on comparatively thin specimens; however for future civil engineering applications, it is imperative that the behavior in tension of thicker specimens is understood. In the present work, specimens containing cement powder and admixtures have been manufactured following two different processes and tested in tension. Multiple matrix cracking has been observed during tensile testing, leading to a “strain-hardening" behavior, confirming the possible suitability of ECC material when used as thick sections (greater than 50mm) in tunneling applications.

Keywords: Cement composite, polymeric fibers, pseudoductility, test-geometry.

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27 Efficiency of Robust Heuristic Gradient Based Enumerative and Tunneling Algorithms for Constrained Integer Programming Problems

Authors: Vijaya K. Srivastava, Davide Spinello

Abstract:

This paper presents performance of two robust gradient-based heuristic optimization procedures based on 3n enumeration and tunneling approach to seek global optimum of constrained integer problems. Both these procedures consist of two distinct phases for locating the global optimum of integer problems with a linear or non-linear objective function subject to linear or non-linear constraints. In both procedures, in the first phase, a local minimum of the function is found using the gradient approach coupled with hemstitching moves when a constraint is violated in order to return the search to the feasible region. In the second phase, in one optimization procedure, the second sub-procedure examines 3n integer combinations on the boundary and within hypercube volume encompassing the result neighboring the result from the first phase and in the second optimization procedure a tunneling function is constructed at the local minimum of the first phase so as to find another point on the other side of the barrier where the function value is approximately the same. In the next cycle, the search for the global optimum commences in both optimization procedures again using this new-found point as the starting vector. The search continues and repeated for various step sizes along the function gradient as well as that along the vector normal to the violated constraints until no improvement in optimum value is found. The results from both these proposed optimization methods are presented and compared with one provided by popular MS Excel solver that is provided within MS Office suite and other published results.

Keywords: Constrained integer problems, enumerative search algorithm, Heuristic algorithm, tunneling algorithm.

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26 Non-Linear Numerical Modeling of the Interaction of Twin Tunnels-Structure

Authors: A. Bayoumi, M. Abdallah, F. Hage Chehade

Abstract:

Structures on the ground surface bear impact from the tunneling-induced settlement, especially when twin tunnels are constructed. The tunneling influence on the structure is considered as a critical issue based on the construction procedure and relative position of tunnels. Lebanon is suffering from a traffic phenomenon caused by the lack of transportation systems. After several traffic counts and geotechnical investigations in Beirut city, efforts aim for the construction of tunneling systems. In this paper, we present a non-linear numerical modeling of the effect of the twin tunnels constructions on the structures located at soil surface for a particular site in Beirut. A parametric study, which concerns the geometric configuration of tunnels, the distance between their centers, the construction order, and the position of the structure, is performed. The tunnel-soil-structure interaction is analyzed by using the non-linear finite element modeling software PLAXIS 2D. The results of the surface settlement and the bending moment of the structure reveal significant influence when the structure is moved away, especially in vertical aligned tunnels.

Keywords: Bending moment, construction procedure, elastic modulus, relative position, soil, structure location, surface settlement, twin tunnels.

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25 Identification of States and Events for the Static and Dynamic Simulation of Single Electron Tunneling Circuits

Authors: Sharief F. Babiker, Abdelkareem Bedri, Rania Naeem

Abstract:

The implementation of single-electron tunneling (SET) simulators based on the master-equation (ME) formalism requires the efficient and accurate identification of an exhaustive list of active states and related tunnel events. Dynamic simulations also require the control of the emerging states and guarantee the safe elimination of decaying states. This paper describes algorithms for use in the stationary and dynamic control of the lists of active states and events. The paper presents results obtained using these algorithms with different SET structures.

Keywords: Active state, Coulomb blockade, Master Equation, Single electron devices

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24 Practical Simulation Model of Floating-Gate MOS Transistor in Sub 100nm Technologies

Authors: Zina Saheb, Ezz El-Masry

Abstract:

As the Silicon oxide scaled down in MOSFET technology to few nanometers, gate Direct Tunneling (DT) in Floating gate (FGMOSFET) devices has become a major concern for analog designers. FGMOSFET has been used in many low-voltage and low-power applications, however, there is no accurate model that account for DT gate leakage in nano-scale. This paper studied and analyzed different simulation models for FGMOSFET using TSMC 90-nm technology. The simulation results for FGMOSFET cascade current mirror shows the impact of DT on circuit performance in terms of current and voltage without the need for fabrication. This works shows the significance of using an accurate model for FGMOSFET in nan-scale technologies.

Keywords: CMOS transistor, direct-tunneling current, floatinggate, gate-leakage current, simulation model.

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23 Noise Performance of Millimeter-wave Silicon Based Mixed Tunneling Avalanche Transit Time(MITATT) Diode

Authors: Aritra Acharyya, Moumita Mukherjee, J. P. Banerjee

Abstract:

A generalized method for small-signal simulation of avalanche noise in Mixed Tunneling Avalanche Transit Time (MITATT) device is presented in this paper where the effect of series resistance is taken into account. The method is applied to a millimeter-wave Double Drift Region (DDR) MITATT device based on Silicon to obtain noise spectral density and noise measure as a function of frequency for different values of series resistance. It is found that noise measure of the device at the operating frequency (122 GHz) with input power density of 1010 Watt/m2 is about 35 dB for hypothetical parasitic series resistance of zero ohm (estimated junction temperature = 500 K). Results show that the noise measure increases as the value of parasitic resistance increases.

Keywords: Noise Analysis, Silicon MITATT, Admittancecharacteristics, Noise spectral density.

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22 Mobile Multicast Support using Old Foreign Agent (MMOFA)

Authors: Hamed Rajabi, Naser Nematbakhsh, Naser Movahediniya

Abstract:

IP multicasting is a key technology for many existing and emerging applications on the Internet. Furthermore, with increasing popularity of wireless devices and mobile equipment, it is necessary to determine the best way to provide this service in a wireless environment. IETF Mobile IP, that provides mobility for hosts in IP networks, proposes two approaches for mobile multicasting, namely, remote subscription (MIP-RS) and bi-directional tunneling (MIP-BT). In MIP-RS, a mobile host re-subscribes to the multicast groups each time it moves to a new foreign network. MIP-RS suffers from serious packet losses while mobile host handoff occurs. In MIP-BT, mobile hosts send and receive multicast packets by way of their home agents (HAs), using Mobile IP tunnels. Therefore, it suffers from inefficient routing and wastage of system resources. In this paper, we propose a protocol called Mobile Multicast support using Old Foreign Agent (MMOFA) for Mobile Hosts. MMOFA is derived from MIP-RS and with the assistance of Mobile host's Old foreign agent, routes the missing datagrams due to handoff in adjacent network via tunneling. Also, we studied the performance of the proposed protocol by simulation under ns-2.27. The results demonstrate that MMOFA has optimal routing efficiency and low delivery cost, as compared to other approaches.

Keywords: Mobile Multicast, Mobile IP, MMOFA, NS-2. 27.

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21 Application of Micro-Tunneling Technique to Rectify Tilted Structures Constructed on Cohesive Soil

Authors: Yasser R. Tawfic, Mohamed A. Eid

Abstract:

Foundation differential settlement and supported structure tilting are an occasionally occurred engineering problem. This may be caused by overloading, changes in ground soil properties or unsupported nearby excavations. Engineering thinking points directly toward the logic solution for such problem by uplifting the settled side. This can be achieved with deep foundation elements such as micro-piles and macro-piles™, jacked piers, and helical piers, jet grouted mortar columns, compaction grout columns, cement grouting or with chemical grouting, or traditional pit underpinning with concrete and mortar. Although, some of these techniques offer economic, fast and low noise solutions, many of them are quite the contrary. For tilted structures, with the limited inclination, it may be much easier to cause a balancing settlement on the less-settlement side which shall be done carefully in a proper rate. This principal has been applied in Leaning Tower of Pisa stabilization with soil extraction from the ground surface. In this research, the authors attempt to introduce a new solution with a different point of view. So, the micro-tunneling technique is presented in here as an intended ground deformation cause. In general, micro-tunneling is expected to induce limited ground deformations. Thus, the researchers propose to apply the technique to form small size ground unsupported holes to produce the target deformations. This shall be done in four phases: 1. Application of one or more micro-tunnels, regarding the existing differential settlement value, under the raised side of the tilted structure. 2. For each individual tunnel, the lining shall be pulled out from both sides (from jacking and receiving shafts) in the slow rate. 3. If required, according to calculations and site records, an additional surface load can be applied on the raised foundation side. 4. Finally, a strengthening soil grouting shall be applied for stabilization after adjustment. A finite element based numerical model is presented to simulate the proposed construction phases for different tunneling positions and tunnels group. For each case, the surface settlements are calculated and induced plasticity points are checked. These results show the impact of the suggested procedure on the tilted structure and its feasibility. Comparing results also show the importance of the position selection and tunnels group gradual effect. Thus, a new engineering solution is presented to one of the structural and geotechnical engineering challenges.

Keywords: Differential settlement, micro-tunnel, soil-structure interaction, tilted structures.

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20 Survey Based Data Security Evaluation in Pakistan Financial Institutions against Malicious Attacks

Authors: Naveed Ghani, Samreen Javed

Abstract:

In today’s heterogeneous network environment, there is a growing demand for distrust clients to jointly execute secure network to prevent from malicious attacks as the defining task of propagating malicious code is to locate new targets to attack. Residual risk is always there no matter what solutions are implemented or whet so ever security methodology or standards being adapted. Security is the first and crucial phase in the field of Computer Science. The main aim of the Computer Security is gathering of information with secure network. No one need wonder what all that malware is trying to do: It's trying to steal money through data theft, bank transfers, stolen passwords, or swiped identities. From there, with the help of our survey we learn about the importance of white listing, antimalware programs, security patches, log files, honey pots, and more used in banks for financial data protection but there’s also a need of implementing the IPV6 tunneling with Crypto data transformation according to the requirements of new technology to prevent the organization from new Malware attacks and crafting of its own messages and sending them to the target. In this paper the writer has given the idea of implementing IPV6 Tunneling Secessions on private data transmission from financial organizations whose secrecy needed to be safeguarded.

Keywords: Network worms, malware infection propagating malicious code, virus, security, VPN.

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19 Hydrogeological Risk and Mining Tunnels: the Fontane-Rodoretto Mine Turin (Italy)

Authors: Paola Gattinoni, Laura Scesi, Elena Cerino Adbin, Daniele Cremonesi

Abstract:

The interaction of tunneling or mining with groundwater has become a very relevant problem not only due to the need to guarantee the safety of workers and to assure the efficiency of the tunnel drainage systems, but also to safeguard water resources from impoverishment and pollution risk. Therefore it is very important to forecast the drainage processes (i.e., the evaluation of drained discharge and drawdown caused by the excavation). The aim of this study was to know better the system and to quantify the flow drained from the Fontane mines, located in Val Germanasca (Turin, Italy). This allowed to understand the hydrogeological local changes in time. The work has therefore been structured as follows: the reconstruction of the conceptual model with the geological, hydrogeological and geological-structural study; the calculation of the tunnel inflows (through the use of structural methods) and the comparison with the measured flow rates; the water balance at the basin scale. In this way it was possible to understand what are the relationships between rainfall, groundwater level variations and the effect of the presence of tunnels as a means of draining water. Subsequently, it the effects produced by the excavation of the mining tunnels was quantified, through numerical modeling. In particular, the modeling made it possible to observe the drawdown variation as a function of number, excavation depth and different mines linings.

Keywords: Groundwater, Italy, numerical model, tunneling.

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18 Influence of Paralleled Capacitance Effect in Well-defined Multiple Value Logical Level System with Active Load

Authors: Chih Chin Yang, Yen Chun Lin, Hsiao Hsuan Cheng

Abstract:

Three similar negative differential resistance (NDR) profiles with both high peak to valley current density ratio (PVCDR) value and high peak current density (PCD) value in unity resonant tunneling electronic circuit (RTEC) element is developed in this paper. The PCD values and valley current density (VCD) values of the three NDR curves are all about 3.5 A and 0.8 A, respectively. All PV values of NDR curves are 0.40 V, 0.82 V, and 1.35 V, respectively. The VV values are 0.61 V, 1.07 V, and 1.69 V, respectively. All PVCDR values reach about 4.4 in three NDR curves. The PCD value of 3.5 A in triple PVCDR RTEC element is better than other resonant tunneling devices (RTD) elements. The high PVCDR value is concluded the lower VCD value about 0.8 A. The low VCD value is achieved by suitable selection of resistors in triple PVCDR RTEC element. The low PV value less than 1.35 V possesses low power dispersion in triple PVCDR RTEC element. The designed multiple value logical level (MVLL) system using triple PVCDR RTEC element provides equidistant logical level. The logical levels of MVLL system are about 0.2 V, 0.8 V, 1.5 V, and 2.2 V from low voltage to high voltage and then 2.2 V, 1.3 V, 0.8 V, and 0.2 V from high voltage back to low voltage in half cycle of sinusoid wave. The output level of four levels MVLL system is represented in 0.3 V, 1.1 V, 1.7 V, and 2.6 V, which satisfies the NMP condition of traditional two-bit system. The remarkable logical characteristic of improved MVLL system with paralleled capacitor are with four significant stable logical levels about 220 mV, 223 mV, 228 mV, and 230 mV. The stability and articulation of logical levels of improved MVLL system are outstanding. The average holding time of improved MVLL system is approximately 0.14 μs. The holding time of improved MVLL system is fourfold than of basic MVLL system. The function of additional capacitor in the improved MVLL system is successfully discovered.

Keywords: Capacitance, Logical level, Constant current source

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17 Back Analysis of Tehran Metro Tunnel Construction Using FLAC-3D

Authors: M. Mahdi, N. Shariatmadari

Abstract:

An important aspect of planning for shallow tunneling under urban areas is the determination of likely surface movements and interaction with existing structures. Back analysis of built tunnels that their settlements magnitude is available, could aid the designers to have a more accuracy in future projects.

In this paper, one single Tehran Metro Tunnel (at west of Hor square, Jang University Street) was selected. At first, surface settlements of this tunnel were measured in situ. Then this tunnel was modeled using the commercial finite deference software FLAC-3D. Finally, Results of modeling and in situ measurements compared for verification.

Keywords: Shallow Tunnel, Back Analysis, Surface Movement, Numerical Modeling.

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16 Resistive RAM Based on Hfox and its Temperature Instability Study

Authors: Z. Fang, H.Y. Yu, W.J. Liu, N. Singh, G.Q. Lo

Abstract:

High performance Resistive Random Access Memory (RRAM) based on HfOx has been prepared and its temperature instability has been investigated in this work. With increasing temperature, it is found that: leakage current at high resistance state increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a smaller On/Off ratio; set and reset voltages decrease, which may be attributed to the higher oxygen ion mobility, in addition to the reduced potential barrier to create / recover oxygen ions (or oxygen vacancies); temperature impact on the RRAM retention degradation is more serious than electrical bias.

Keywords: RRAM, resistive switching, temperature instability.

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15 Effect of Spatially Correlated Disorder on Electronic Transport Properties of Aperiodic Superlattices (GaAs/AlxGa1-xAs)

Authors: F. Bendahma, S. Bentata, S. Cherid, A. Zitouni, S. Terkhi, T. Lantri, Y. Sefir, Z. F. Meghoufel

Abstract:

We examine the electronic transport properties in AlxGa1-xAs/GaAs superlattices. Using the transfer-matrix technique and the exact Airy function formalism, we investigate theoretically the effect of structural parameters on the electronic energy spectra of trimer thickness barrier (TTB). Our numerical calculations showed that the localization length of the states becomes more extended when the disorder is correlated (trimer case). We have also found that the resonant tunneling time (RTT) is of the order of several femtoseconds.

Keywords: Electronic transport properties, structural parameters, superlattice, transfer-matrix technique.

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14 STM Spectroscopy of Alloyed Nanocrystal Composite CdSxSe1-X

Authors: T. Abdallah, K. Easawi, A. Khalid, S. Negm, H. Talaat

Abstract:

Nanocrystals (NC) alloyed composite CdSxSe1-x(x=0 to 1) have been prepared using the chemical solution deposition technique. The energy band gap of these alloyed nanocrystals of approximately the same size, have been determined by scanning tunneling spectroscopy (STS) technique at room temperature. The values of the energy band gap obtained directly using STS are compared to those measured by optical spectroscopy. Increasing the molar fraction ratio x from 0 to 1 causes clearly observed increase in the band gap of the alloyed composite nanocrystal. Vegard-s law was applied to calculate the parameters of the effective mass approximation (EMA) model and the dimension obtained were compared to the values measured by STM. The good agreement of the calculated and measured values is a direct result of applying Vegard's law in the nanocomposites.

Keywords: Alloy semiconductor nanocrystals, STM.

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13 Photon Localization inside a Waveguide Modeled by Uncertainty Principle

Authors: Shilpa N. Kulkarni, Sujata R. Patrikar

Abstract:

In the present work, an attempt is made to understand electromagnetic field confinement in a subwavelength waveguide structure using concepts of quantum mechanics. Evanescent field in the waveguide is looked as inability of the photon to get confined in the waveguide core and uncertainty of position is assigned to it. The momentum uncertainty is calculated from position uncertainty. Schrödinger wave equation for the photon is written by incorporating position-momentum uncertainty. The equation is solved and field distribution in the waveguide is obtained. The field distribution and power confinement is compared with conventional waveguide theory. They were found in good agreement with each other.

Keywords: photon localization in waveguide, photon tunneling, quantum confinement of light, Schrödinger wave equation, uncertainty principle.

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12 Characterization of Carbon Based Nanometer Scale Coil Growth

Authors: C. C. Su, S. H. Chang

Abstract:

The carbon based coils with the nanometer scale have the 3 dimension helix geometry. We synthesized the carbon nano-coils by the use of chemical vapor deposition technique with iron and tin as the catalysts. The fabricated coils have the external diameter of ranging few hundred nm to few thousand nm. The Scanning Electro-Microscope (SEM) and Tunneling Electro-Microscope has shown detail images of the coil-s structure. The fabrication of the carbon nano-coils can be grown on the metal and non-metal substrates, such as the stainless steel and silicon substrates. Besides growth on the flat substrate; they also can be grown on the stainless steel wires. After the synthesis of the coils, the mechanical and electro-mechanical property is measured. The experimental results were reported.

Keywords: Carbon nanocoils, chemical vapor deposition, nano-materials

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11 2D Numerical Analysis of Sao Paulo Tunnel

Authors: A.H. Akhaveissy

Abstract:

Nonlinear finite element method and Serendipity eight nodes element are used for determining of ground surface settlement due to tunneling. Linear element with elastic behavior is used for modeling of lining. Modified Generalized plasticity model with nonassociated flow rule is applied for analysis of a tunnel in Sao Paulo – Brazil. The tunnel had analyzed by Lades- model with 16 parameters. In this work modified Generalized Plasticity is used with 10 parameters, also Mohr-Coulomb model is used to analysis the tunnel. The results show good agreement with observed results of field data by modified Generalized Plasticity model than other models. The obtained result by Mohr-Coulomb model shows less settlement than other model due to excavation.

Keywords: Non-associated flow rule, Generalized plasticity, tunnel excavation, Excavation method.

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10 Settlement Prediction for Tehran Subway Line-3 via FLAC3D and ANFIS

Authors: S. A. Naeini, A. Khalili

Abstract:

Nowadays, tunnels with different applications are developed, and most of them are related to subway tunnels. The excavation of shallow tunnels that pass under municipal utilities is very important, and the surface settlement control is an important factor in the design. The study sought to analyze the settlement and also to find an appropriate model in order to predict the behavior of the tunnel in Tehran subway line-3. The displacement in these sections is also determined by using numerical analyses and numerical modeling. In addition, the Adaptive Neuro-Fuzzy Inference System (ANFIS) method is utilized by Hybrid training algorithm. The database pertinent to the optimum network was obtained from 46 subway tunnels in Iran and Turkey which have been constructed by the new Austrian tunneling method (NATM) with similar parameters based on type of their soil. The surface settlement was measured, and the acquired results were compared to the predicted values. The results disclosed that computing intelligence is a good substitute for numerical modeling.

Keywords: Settlement, subway line, FLAC3D, ANFIS method.

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9 A Method of Drilling a Ground Using a Robotic Arm

Authors: Lotfi Beji, Laredj Benchikh

Abstract:

Underground tunnel face bolting and pipe umbrella reinforcement are one of the most challenging tasks in construction whether industrial or not, and infrastructures such as roads or pipelines. It is one of the first sectors of economic activity in the world. Through a variety of soil and rock, a cyclic Conventional Tunneling Method (CTM) remains the best one for projects with highly variable ground conditions or shapes. CTM is the only alternative for the renovation of existing tunnels and creating emergency exit. During the drilling process, a wide variety of non-desired vibrations may arise, and a method using a robot arm is proposed. The main kinds of drilling through vibration here is the bit-bouncing phenomenon (resonant axial vibration). Hence, assisting the task by a robot arm may play an important role on drilling performances and security. We propose to control the axial-vibration phenomenon along the drillstring at a practical resonant frequency, and embed a Resonant Sonic Drilling Head (RSDH) as a robot end effector for drilling. Many questionable industry drilling criteria and stability are discussed in this paper.

Keywords: Drilling, PDE control, robotic arm, resonant vibration.

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8 Characterization of the Energy Band Diagram of Fabricated SnO2/CdS/CdTe Thin Film Solar Cells

Authors: Rasha A. Abdullah, Mohammed. A. Razooqi, Adwan N. H. Al-Ajili

Abstract:

A SnO2/CdS/CdTe heterojunction was fabricated by thermal evaporation technique. The fabricated cells were annealed at 573K for periods of 60, 120 and 180 minutes. The structural properties of the solar cells have been studied by using X-ray diffraction. Capacitance- voltage measurements were studied for the as-prepared and annealed cells at a frequency of 102 Hz. The capacitance- voltage measurements indicated that these cells are abrupt. The capacitance decreases with increasing annealing time. The zero bias depletion region width and the carrier concentration increased with increasing annealing time. The carrier transport mechanism for the CdS/CdTe heterojunction in dark is tunneling recombination. The ideality factor is 1.56 and the reverse bias saturation current is 9.6×10-10A. The energy band lineup for the n- CdS/p-CdTe heterojunction was investigated using current - voltage and capacitance - voltage characteristics.

Keywords: SnO2/CdS/CdTe heterojunction, XRD, C-V measurement, I-V measurement, energy band diagram.

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