Ashwani K. Rana and  Narottam Chand and  Vinod Kapoor,  Gate Tunnel Current Calculation for NMOSFET Based on Deep Sub-Micron Effects.   journal   = {International Journal of Electronics and Communication Engineering}, [online]. World Academy of Science, Engineering and Technology.
    March 2009, vol. 27(3). 565 - 573
    [viewed 24 April 2024]. Available from: https://publications.waset.org/pdf/14468.