This paper presents a threshold voltage model of pocket implanted sub-100 nm n-MOSFETs incorporating the drain and substrate bias effects using two linear pocket profiles. Two linear equations are used to simulate the pocket profiles along the channel at the surface from the source and drain edges towards the center of the n-MOSFET. Then the effective doping concentration is derived and is used in the threshold voltage equation that is obtained by solving the Poisson-s equation in the depletion region at the surface. Simulated threshold voltages for various gate lengths fit well with the experimental data already published in the literature. The simulated result is compared with the two other pocket profiles used to derive the threshold voltage models of n-MOSFETs. The comparison shows that the linear model has a simple compact form that can be utilized to study and characterize the pocket implanted advanced ULSI devices.<\/p>\r\n","references":"[1] S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York, USA:\r\nJohn Wiley & Sons, 1981, ch. 8.\r\n[2] M. Miura-Mattausch, M. Suetake, H. J. Mattausch, S. Kumashiro,\r\nN. Shigyo, S. Oganaka, and N. Nakayama, \"Physical modeling of the\r\nreverse short channel effect for circuit simulation,\" IEEE Transactions\r\non Electron Devices, vol. 48, pp. 2449-2452, Oct. 2001.\r\n[3] H. E. Ghitani, S. Sadik, and A. H.Shousha, \"Two dimensional analytical\r\nmodeling of short channel MOS transistors,\" International Journal of\r\nElectronics, vol. 81, pp. 517-524, 1996.\r\n[4] K. Y. Lim and X. Zhou, \"Modeling of threshold voltage with nonuniform\r\nsubstrate doping,\" in Proceedings of the IEEE International\r\nConference on Semiconductor Electronics (ICSE 1998), Malaysia, 1998,\r\npp. 27-31.\r\n[5] B. Yu, C. H. Wann, E. D. Nowak, K. Noda, and C. Hu, \"Short channel\r\neffect improved by lateral channel engineering in deep-submicrometer\r\nMOSFETs,\" IEEE Transactions on Electron Devices, vol. 44, pp. 627-\r\n633, Apr. 1997.\r\n[6] B. Yu, H. Wang, O. Millic, Q. Xiang, W. Wang, J. X. An, and M. R. Lin,\r\n\"50 nm gate length CMOS transistor with super-halo: Design, process\r\nand reliability,\" IEDM Technical Digest, pp. 653-656, 1999.\r\n[7] K. M. Cao, W. Liu, X. Jin, K. Vasant, K. Green, J. Krick, T. Vrotsos,\r\nand C. Hu, \"Modeling of pocket implanted MOSFETs for anomalous\r\nanalog behavior,\" IEDM Technical Digest, pp. 171-174, 1999.\r\n[8] Y. S. Pang and J. R. Brews, \"Models for subthreshold and above\r\nsubthreshold currents in 0.1 \u256c\u255dm pocket n-MOSFETs for low voltage\r\napplications,\" IEEE Transactions on Electron Devices, vol. 49, pp. 832-\r\n839, May 2002.\r\n[9] Y. Cheng, T. Sugii, K. Chen, and C. Hu, \"Modeling of small size\r\nMOSFETs with reverse short channel and narrow width effects for\r\ncircuit simulation,\" Solid State Electronics, vol. 41, pp. 1227-1231,\r\n1997.\r\n[10] M. K. Khanna, M. C. Thomas, R. S. Gupta, and S. Haldar, \"An\r\nanalytical model for anomalous threshold voltage behavior of short\r\nchannel MOSFETs,\" Solid State Electronics, vol. 41, pp. 1386-1388,\r\n1997.\r\n[11] Y. Taur and E. J. Nowak, \"CMOS devices below 0.1 \u256c\u255dm; how high will\r\ngo?\" IEDM Technical Digest, pp. 215-218, 1997.\r\n[12] K. N. Ratnakumar and J. D. Meindl, \"Short-channel MOST threshold\r\nvoltage model,\" IEEE Journal of Solid State Circuits, vol. 17, pp. 937-\r\n948, Oct. 1982.\r\n[13] X. Zhou, K. Y. Lim, and D. Lim, \"Physics-based threshold voltage\r\nmodeling with reverse short channel effect,\" Journal of Modeling and\r\nSimulation of Microsystems, vol. 2, no. 1, pp. 51-56, 1999.\r\n[14] \"A general approach to compact threshold voltage formulation\r\nbased on 2-D numerical simulation and experimental correlation for\r\ndeep-submicron ulsi technology development,\" IEEE Transactions on\r\nElectron Devices, vol. 47, no. 1, pp. 214-221, Jan. 2000.\r\n[15] M. H. Bhuyan, F. Ferdous, and Q. D. M. Khosru, \"A threshold voltage\r\nmodel for sub-100 nm pocket implanted NMOSFET,\" in Proceedings\r\nof the 4th IEEE International Conference on Electrical and Computer\r\nEngineering (ICECE 2006), Dhaka, Bangladesh, Dec. 2006, pp. 522-\r\n525.","publisher":"World Academy of Science, Engineering and Technology","index":"Open Science Index 44, 2010"}