Commenced in January 2007
Paper Count: 30579
Compact Model of Dual-Drain MAGFETs Simulation
Abstract:This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1077768Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1413
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