@article{(Open Science Index):https://publications.waset.org/pdf/9996851,
	  title     = {Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT},
	  author    = {A. Hamdoune and  M. Abdelmoumene and  A. Hamroun},
	  country	= {},
	  institution	= {},
	  abstract     = {The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.
},
	    journal   = {International Journal of Electronics and Communication Engineering},
	  volume    = {7},
	  number    = {1},
	  year      = {2013},
	  pages     = {96 - 100},
	  ee        = {https://publications.waset.org/pdf/9996851},
	  url   	= {https://publications.waset.org/vol/73},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 73, 2013},
	}