Muhibul Haque Bhuyan and  Quazi D. M. Khosru,  Analytical Subthreshold Drain Current Model Incorporating Inversion Layer Effective Mobility Model for Pocket Implanted Nano Scale n-MOSFET.   journal   = {International Journal of Electrical and Computer Engineering}, [online]. World Academy of Science, Engineering and Technology.
    January 2013, vol. 76(4). 465 - 472
    [viewed 25 April 2024]. Available from: https://publications.waset.org/pdf/9997169.