A Genetic-Neural-Network Modeling Approach for Self-Heating in GaN High Electron Mobility Transistors
Authors: Anwar Jarndal
In this paper, a genetic-neural-network (GNN) based large-signal model for GaN HEMTs is presented along with its parameters extraction procedure. The model is easy to construct and implement in CAD software and requires only DC and S-parameter measurements. An improved decomposition technique is used to model self-heating effect. Two GNN models are constructed to simulate isothermal drain current and power dissipation, respectively. The two model are then composed to simulate the drain current. The modeling procedure was applied to a packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation with measured data. A very good agreement between the simulation and measurement is obtained.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1111640Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1268
 U. K. Mishra, L. Shen, T. E. Kazior, and Y.-F. Wu, “GaN-based RF power devices and amplifiers,” Proc. IEEE, vol. 96, no. 2, February 2008, pp. 287–305.
 J.-W. Lee and K. Webb, “A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC,” IEEE Transaction on Microwave Theory and Techniques, vol. 52, January 2004, pp. 2–9.
 Anwar Jarndal and Günter Kompa, “Large-signal model for AlGaN/GaN HEMT accurately predicts trapping and self-heating induced dispersion and intermodulation distortion,” IEEE Transaction on Electron Devices, vol. 54, no. 11, November 2007, pp. 2830-2836.
 Anwar Jarndal, Pouya Aflaki, Renato Negra, Ammar Kouki, and Fadhel M. Ghannouchi, “Large-signal modeling methodology for GaN HEMTs for RF switching-mode power amplifiers design,” International Journal of RF and Microwave Computer-Aided Engineering, vol.21, no. 1, November 2010, pp. 45-50.
 Anwar Jarndal, Asdesach Zena Markos, and Günter Kompa, “Improved modeling of GaN HEMT on Si substrate for design of RF power amplifiers,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, No.3, March 2011, pp. 644 - 651.
 Q. j. Change and K. C. Gupta, Neural networks for RF and microwave design, Norwood, MA: Artech House, 2000.
 J. Kuzmík, S. Bychikhin, M. Neuburger, A. Dadgar, A. Krost, E. Kohn, and D. Pogan, “Transient Thermal Characterization of AlGaN/GaNHEMTs Grown on Silicon,” IEEE Transaction on Electron Devices, vol. 52, no. 8, August 2005.