TY - JFULL AU - A. Hamdoune and M. Abdelmoumene and A. Hamroun PY - 2013/2/ TI - Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT T2 - International Journal of Electronics and Communication Engineering SP - 95 EP - 100 VL - 7 SN - 1307-6892 UR - https://publications.waset.org/pdf/9996851 PU - World Academy of Science, Engineering and Technology NX - Open Science Index 73, 2013 N2 - The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures. We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz. ER -