Search results for: CMOS biosensor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 205

Search results for: CMOS biosensor

115 An Inductive Coupling Based CMOS Wireless Powering Link for Implantable Biomedical Applications

Authors: Lei Yao, Jia Hao Cheong, Rui-Feng Xue, Minkyu Je

Abstract:

A closed-loop controlled wireless power transmission circuit block for implantable biomedical applications is described in this paper. The circuit consists of one front-end rectifier, power management sub-block including bandgap reference and low drop-out regulators (LDOs) as well as transmission power detection / feedback circuits. Simulation result shows that the front-end rectifier achieves 80% power efficiency with 750-mV single-end peak-to-peak input voltage and 1.28-V output voltage under load current of 4 mA. The power management block can supply 1.8mA average load current under 1V consuming only 12μW power, which is equivalent to 99.3% power efficiency. The wireless power transmission block described in this paper achieves a maximum power efficiency of 80%. The wireless power transmission circuit block is designed and implemented using UMC 65-nm CMOS/RF process. It occupies 1 mm × 1.2 mm silicon area.

Keywords: Implantable biomedical devices, wireless power transfer, LDO, rectifier, closed-loop power control

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114 Design and Analysis of an 8T Read Decoupled Dual Port SRAM Cell for Low Power High Speed Applications

Authors: Ankit Mitra

Abstract:

Speed, power consumption and area, are some of the most important factors of concern in modern day memory design. As we move towards Deep Sub-Micron Technologies, the problems of leakage current, noise and cell stability due to physical parameter variation becomes more pronounced. In this paper we have designed an 8T Read Decoupled Dual Port SRAM Cell with Dual Threshold Voltage and characterized it in terms of read and write delay, read and write noise margins, Data Retention Voltage and Leakage Current. Read Decoupling improves the Read Noise Margin and static power dissipation is reduced by using Dual-Vt transistors. The results obtained are compared with existing 6T, 8T, 9T SRAM Cells, which shows the superiority of the proposed design. The Cell is designed and simulated in TSPICE using 90nm CMOS process.

Keywords: CMOS, Dual-Port, Data Retention Voltage, 8T SRAM, Leakage Current, Noise Margin, Loop-cutting, Single-ended.

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113 A Novel FIFO Design for Data Transfer in Mixed Timing Systems

Authors: Mansi Jhamb, R. K. Sharma, A. K. Gupta

Abstract:

In the current scenario, with the increasing integration densities, most system-on-chip designs are partitioned into multiple clock domains. In this paper, an asynchronous FIFO (First-in First-out pipeline) design is employed as a data transfer interface between two independent clock domains. Since the clocks on the either sides of the FIFO run at a different speed, the task to ensure the correct data transmission through this FIFO is manually performed. Firstly an existing asynchronous FIFO design is discussed and simulated. Gate-level simulation results depicted the flaw in existing design. In order to solve this problem, a novel modified asynchronous FIFO design is proposed. The results obtained from proposed design are in perfect accordance with theoretical expectations. The proposed asynchronous FIFO design outperforms the existing design in terms of accuracy and speed. In order to evaluate the performance of the FIFO designs presented in this paper, the circuits were implemented in 0.24µ TSMC CMOS technology and simulated at 2.5V using HSpice (© Avant! Corporation). The layout design of the proposed FIFO is also presented.

Keywords: Asynchronous, Clock, CMOS, C-element, FIFO, Globally Asynchronous Locally Synchronous (GALS), HSpice.

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112 A Single-Phase Register File with Complementary Pass-Transistor Adiabatic Logic

Authors: Jianping Hu, Xiaolei Sheng

Abstract:

This paper introduces an adiabatic register file based on two-phase CPAL (Complementary Pass-Transistor Adiabatic Logic circuits) with power-gating scheme, which can operate on a single-phase power clock. A 32×32 single-phase adiabatic register file with power-gating scheme has been implemented with TSMC 0.18μm CMOS technology. All the circuits except for the storage cells employ two-phase CPAL circuits, and the storage cell is based on the conventional memory one. The two-phase non-overlap power-clock generator with power-gating scheme is used to supply the proposed adiabatic register file. Full-custom layouts are drawn. The energy and functional simulations have been performed using the net-list extracted from their layouts. Compared with the traditional static CMOS register file, HSPICE simulations show that the proposed adiabatic register file can work very well, and it attains about 73% energy savings at 100 MHz.

Keywords: Low power, Register file, Complementarypass-transistor logic, Adiabatic logic, Single-phase power clock.

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111 Design and Optimization of Parity Generator and Parity Checker Based On Quantum-dot Cellular Automata

Authors: Santanu Santra, Utpal Roy

Abstract:

Quantum-dot Cellular Automata (QCA) is one of the most substitute emerging nanotechnologies for electronic circuits, because of lower power consumption, higher speed and smaller size in comparison with CMOS technology. The basic devices, a Quantum-dot cell can be used to implement logic gates and wires. As it is the fundamental building block on nanotechnology circuits. By applying XOR gate the hardware requirements for a QCA circuit can be decrease and circuits can be simpler in terms of level, delay and cell count. This article present a modest approach for implementing novel optimized XOR gate, which can be applied to design many variants of complex QCA circuits. Proposed XOR gate is simple in structure and powerful in terms of implementing any digital circuits. In order to verify the functionality of the proposed design some complex implementation of parity generator and parity checker circuits are proposed and simulating by QCA Designer tool and compare with some most recent design. Simulation results and physical relations confirm its usefulness in implementing every digital circuit.

Keywords: Clock, CMOS technology, Logic gates, QCA Designer, Quantum-dot Cellular Automata (QCA).

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110 Analog Front End Low Noise Amplifier in 0.18-µm CMOS for Ultrasound Imaging Applications

Authors: Haridas Kuruveettil, Dongning Zhao, Cheong Jia Hao, Minkyu Je

Abstract:

We present the design of Analog front end (AFE) low noise pre-amplifier implemented in a high voltage 0.18-µm CMOS technology for  a three dimensional ultrasound  bio microscope (3D UBM) application. The fabricated chip has 4X16 pre-amplifiers implemented to interface   a 2-D array of    high frequency capacitive micro-machined ultrasound transducers (CMUT). Core AFE cell consists of a high-voltage pulser in the transmit path, and a low-noise transimpedance amplifier in the receive path. Proposed system offers a high image resolution by the use of high frequency CMUTs with associated high performance imaging electronics integrated together.  Performance requirements and the design methods of the high bandwidth transimpedance amplifier are described in the paper. A single cell of transimpedance (TIA) amplifier and the bias circuit occupies a silicon area of 250X380 µm2 and the full chip occupies a total silicon area of 10x6.8 mm².

Keywords: Ultrasound, analog front end, medical imaging, beam forming, biomicroscope, transimpedance gain.

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109 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), and ion sensor electronics.

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108 Design and Characterization of CMOS Readout Circuit for ISFET and ISE Based Sensors

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Sallehand, Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 Rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: Readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), ion sensor electronics.

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107 A Novel Low Power, High Speed 14 Transistor CMOS Full Adder Cell with 50% Improvement in Threshold Loss Problem

Authors: T. Vigneswaran, B. Mukundhan, P. Subbarami Reddy

Abstract:

Full adders are important components in applications such as digital signal processors (DSP) architectures and microprocessors. In addition to its main task, which is adding two numbers, it participates in many other useful operations such as subtraction, multiplication, division,, address calculation,..etc. In most of these systems the adder lies in the critical path that determines the overall speed of the system. So enhancing the performance of the 1-bit full adder cell (the building block of the adder) is a significant goal.Demands for the low power VLSI have been pushing the development of aggressive design methodologies to reduce the power consumption drastically. To meet the growing demand, we propose a new low power adder cell by sacrificing the MOS Transistor count that reduces the serious threshold loss problem, considerably increases the speed and decreases the power when compared to the static energy recovery full (SERF) adder. So a new improved 14T CMOS l-bit full adder cell is presented in this paper. Results show 50% improvement in threshold loss problem, 45% improvement in speed and considerable power consumption over the SERF adder and other different types of adders with comparable performance.

Keywords: Arithmetic circuit, full adder, multiplier, low power, very Large-scale integration (VLSI).

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106 Interplay of Power Management at Core and Server Level

Authors: Jörg Lenhardt, Wolfram Schiffmann, Jörg Keller

Abstract:

While the feature sizes of recent Complementary Metal Oxid Semiconductor (CMOS) devices decrease the influence of static power prevails their energy consumption. Thus, power savings that benefit from Dynamic Frequency and Voltage Scaling (DVFS) are diminishing and temporal shutdown of cores or other microchip components become more worthwhile. A consequence of powering off unused parts of a chip is that the relative difference between idle and fully loaded power consumption is increased. That means, future chips and whole server systems gain more power saving potential through power-aware load balancing, whereas in former times this power saving approach had only limited effect, and thus, was not widely adopted. While powering off complete servers was used to save energy, it will be superfluous in many cases when cores can be powered down. An important advantage that comes with that is a largely reduced time to respond to increased computational demand. We include the above developments in a server power model and quantify the advantage. Our conclusion is that strategies from datacenters when to power off server systems might be used in the future on core level, while load balancing mechanisms previously used at core level might be used in the future at server level.

Keywords: Power efficiency, static power consumption, dynamic power consumption, CMOS.

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105 A High-Speed Multiplication Algorithm Using Modified Partial Product Reduction Tree

Authors: P. Asadee

Abstract:

Multiplication algorithms have considerable effect on processors performance. A new high-speed, low-power multiplication algorithm has been presented using modified Dadda tree structure. Three important modifications have been implemented in inner product generation step, inner product reduction step and final addition step. Optimized algorithms have to be used into basic computation components, such as multiplication algorithms. In this paper, we proposed a new algorithm to reduce power, delay, and transistor count of a multiplication algorithm implemented using low power modified counter. This work presents a novel design for Dadda multiplication algorithms. The proposed multiplication algorithm includes structured parts, which have important effect on inner product reduction tree. In this paper, a 1.3V, 64-bit carry hybrid adder is presented for fast, low voltage applications. The new 64-bit adder uses a new circuit to implement the proposed carry hybrid adder. The new adder using 80 nm CMOS technology has been implemented on 700 MHz clock frequency. The proposed multiplication algorithm has achieved 14 percent improvement in transistor count, 13 percent reduction in delay and 12 percent modification in power consumption in compared with conventional designs.

Keywords: adder, CMOS, counter, Dadda tree, encoder.

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104 Design and Implementation of a 10-bit SAR ADC

Authors: Hasmayadi Abdul Majid, Rohana Musa

Abstract:

This paper presents the development of a 38.5 kS/s 10-bit low power SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and SAR digital logic to create 10 effective bits while consuming less than 7.8 mW with a 3.3 V power supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC.

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103 Synthesis of Highly Sensitive Molecular Imprinted Sensor for Selective Determination of Doxycycline in Honey Samples

Authors: Nadia El Alami El Hassani, Soukaina Motia, Benachir Bouchikhi, Nezha El Bari

Abstract:

Doxycycline (DXy) is a cycline antibiotic, most frequently prescribed to treat bacterial infections in veterinary medicine. However, its broad antimicrobial activity and low cost, lead to an intensive use, which can seriously affect human health. Therefore, its spread in the food products has to be monitored. The scope of this work was to synthetize a sensitive and very selective molecularly imprinted polymer (MIP) for DXy detection in honey samples. Firstly, the synthesis of this biosensor was performed by casting a layer of carboxylate polyvinyl chloride (PVC-COOH) on the working surface of a gold screen-printed electrode (Au-SPE) in order to bind covalently the analyte under mild conditions. Secondly, DXy as a template molecule was bounded to the activated carboxylic groups, and the formation of MIP was performed by a biocompatible polymer by the mean of polyacrylamide matrix. Then, DXy was detected by measurements of differential pulse voltammetry (DPV). A non-imprinted polymer (NIP) prepared in the same conditions and without the use of template molecule was also performed. We have noticed that the elaborated biosensor exhibits a high sensitivity and a linear behavior between the regenerated current and the logarithmic concentrations of DXy from 0.1 pg.mL−1 to 1000 pg.mL−1. This technic was successfully applied to determine DXy residues in honey samples with a limit of detection (LOD) of 0.1 pg.mL−1 and an excellent selectivity when compared to the results of oxytetracycline (OXy) as analogous interfering compound. The proposed method is cheap, sensitive, selective, simple, and is applied successfully to detect DXy in honey with the recoveries of 87% and 95%. Considering these advantages, this system provides a further perspective for food quality control in industrial fields.

Keywords: Electrochemical sensor, molecular imprinted polymer, doxycycline, food control.

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102 Reversible Binary Arithmetic for Integrated Circuit Design

Authors: D. Krishnaveni, M. Geetha Priya

Abstract:

Application of reversible logic in integrated circuits results in the improved optimization of power consumption. This technology can be put into use in a variety of low power applications such as quantum computing, optical computing, nano-technology, and Complementary Metal Oxide Semiconductor (CMOS) Very Large Scale Integrated (VLSI) design etc. Logic gates are the basic building blocks in the design of any logic network and thus integrated circuits. In this paper, reversible Dual Key Gate (DKG) and Dual key Gate Pair (DKGP) gates that work singly as full adder/full subtractor are used to realize the basic building blocks of logic circuits. Reversible full adder/subtractor and parallel adder/ subtractor are designed using other reversible gates available in the literature and compared with that of DKG & DKGP gates. Efficient performance of reversible logic circuits relies on the optimization of the key parameters viz number of constant inputs, garbage outputs and number of reversible gates. The full adder/subtractor and parallel adder/subtractor design with reversible DKGP and DKG gates results in least number of constant inputs, garbage outputs, and number of reversible gates compared to the other designs. Thus, this paper provides a threshold to build more complex arithmetic systems using these reversible logic gates, leading to the enhanced performance of computing systems.

Keywords: Low power CMOS, quantum computing, reversible logic gates, full adder, full subtractor, parallel adder/subtractor, basic gates, universal gates.

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101 Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters

Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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100 Self Compensating ON Chip LDO Voltage Regulator in 180nm

Authors: SreehariRao Patri, K. S. R. KrishnaPrasad

Abstract:

An on chip low drop out voltage regulator that employs elegant compensation scheme is presented in this paper. The novelty in this design is that the device parasitic capacitances are exploited for compensation at different loads. The proposed LDO is designed to provide a constant voltage of 1.2V and is implemented in UMC 180 nano meter CMOS technology. The voltage regulator presented improves stability even at lighter loads and enhances line and load regulation.

Keywords: Analog, LDO, SOC.

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99 High-Efficiency Comparator for Low-Power Application

Authors: M. Yousefi, N. Nasirzadeh

Abstract:

In this paper, dynamic comparator structure employing two methods for power consumption reduction with applications in low-power high-speed analog-to-digital converters have been presented. The proposed comparator has low consumption thanks to power reduction methods. They have the ability for offset adjustment. The comparator consumes 14.3 μW at 100 MHz which is equal to 11.8 fJ. The comparator has been designed and simulated in 180 nm CMOS. Layouts occupy 210 μm2.

Keywords: Comparator, low, power, efficiency.

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98 Design and Implementation of a 10-bit SAR ADC with A Programmable Reference

Authors: Hasmayadi Abdul Majid, Yuzman Yusoff, Noor Shelida Salleh

Abstract:

This paper presents the development of a single-ended 38.5 kS/s 10-bit programmable reference SAR ADC which is realized in MIMOS’s 0.35 µm CMOS process. The design uses a resistive DAC, a dynamic comparator with pre-amplifier and a SAR digital logic to create 10 effective bits ADC. A programmable reference circuitry allows the ADC to operate with different input range from 0.6 V to 2.1 V. The ADC consumed less than 7.5 mW power with a 3 V supply.

Keywords: Successive Approximation Register Analog-to- Digital Converter, SAR ADC, Resistive DAC, Programmable Reference.

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97 Universal Current-Mode OTA-C KHN Biquad

Authors: Dalibor Biolek, Viera Biolková, Zden─øk Kolka

Abstract:

A universal current-mode biquad is described which represents an economical variant of well-known KHN (Kerwin, Huelsman, Newcomb) voltage-mode filter. The circuit consists of two multiple-output OTAs and of two grounded capacitors. Utilizing simple splitter of the input current and a pair of jumpers, all the basic 2nd-order transfer functions can be implemented. The principle is verified by Spice simulation on the level of a CMOS structure of OTAs.

Keywords: Biquad, current mode, OTA.

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96 A Novel Logarithmic Current-Controlled Current Amplifier (LCCA)

Authors: Karama M. AL-Tamimi, Munir A. Al-Absi

Abstract:

A new OTA-based logarithmic-control variable gain current amplifier (LCCA) is presented. It consists of two Operational Transconductance Amplifier (OTA) and two PMOS transistors biased in weak inversion region. The circuit operates from 0.6V DC power supply and consumes 0.6 μW. The linear-dB controllable output range is 43 dB with maximum error less than 0.5dB. The functionality of the proposed design was confirmed using HSPICE in 0.35μm CMOS process technology.

Keywords: LCCA, OTA, Logarithmic, VGA, Weak inversion, Current-mode

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95 On the Characteristics of Liquid Explosive Dispersing Flow

Authors: Lei Li, Xiaobing Ren, Xiaoxia Lu, Xiaofang Yan

Abstract:

In this paper, some experiments of liquid dispersion flow driven by explosion in vertical plane were carried out using a liquid explosive dispersion device with film cylindrical constraints. The separated time series describing the breakup shape and dispersion process of liquid were recorded with high speed CMOS camera. The experimental results were analyzed and some essential characteristics of liquid dispersing flow are presented.

Keywords: Explosive Disseminations, liquid dispersion Flow, Cavitations, Gasification.

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94 Developing Manufacturing Process for the Graphene Sensors

Authors: Abdullah Faqihi, John Hedley

Abstract:

Biosensors play a significant role in the healthcare sectors, scientific and technological progress. Developing electrodes that are easy to manufacture and deliver better electrochemical performance is advantageous for diagnostics and biosensing. They can be implemented extensively in various analytical tasks such as drug discovery, food safety, medical diagnostics, process controls, security and defence, in addition to environmental monitoring. Development of biosensors aims to create high-performance electrochemical electrodes for diagnostics and biosensing. A biosensor is a device that inspects the biological and chemical reactions generated by the biological sample. A biosensor carries out biological detection via a linked transducer and transmits the biological response into an electrical signal; stability, selectivity, and sensitivity are the dynamic and static characteristics that affect and dictate the quality and performance of biosensors. In this research, a developed experimental study for laser scribing technique for graphene oxide inside a vacuum chamber for processing of graphene oxide is presented. The processing of graphene oxide (GO) was achieved using the laser scribing technique. The effect of the laser scribing on the reduction of GO was investigated under two conditions: atmosphere and vacuum. GO solvent was coated onto a LightScribe DVD. The laser scribing technique was applied to reduce GO layers to generate rGO. The micro-details for the morphological structures of rGO and GO were visualised using scanning electron microscopy (SEM) and Raman spectroscopy so that they could be examined. The first electrode was a traditional graphene-based electrode model, made under normal atmospheric conditions, whereas the second model was a developed graphene electrode fabricated under a vacuum state using a vacuum chamber. The purpose was to control the vacuum conditions, such as the air pressure and the temperature during the fabrication process. The parameters to be assessed include the layer thickness and the continuous environment. Results presented show high accuracy and repeatability achieving low cost productivity.

Keywords: Laser scribing, LightScribe DVD, graphene oxide, scanning electron microscopy.

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93 Experimental Investigation of Adjacent Hall Structures Parameters

Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

Abstract:

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

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92 A Sub-mW Low Noise Amplifier for Wireless Sensor Networks

Authors: Gianluca Cornetta, David J. Santos, Balwant Godara

Abstract:

A 1.2 V, 0.61 mA bias current, low noise amplifier (LNA) suitable for low-power applications in the 2.4 GHz band is presented. Circuit has been implemented, laid out and simulated using a UMC 130 nm RF-CMOS process. The amplifier provides a 13.3 dB power gain a noise figure NF< 2.28 dB and a 1-dB compression point of -15.69 dBm, while dissipating 0.74 mW. Such performance make this design suitable for wireless sensor networks applications such as ZigBee.

Keywords: Current Reuse, IEEE 802.15.4 (ZigBee), Low NoiseAmplifiers, Wireless Sensor Networks.

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91 A New True RMS-to-DC Converter in CMOS Technology

Authors: H. Asiaban, E. Farshidi

Abstract:

This paper presents a new true RMS-to-DC converter circuit based on a square-root-domain squarer/divider. The circuit is designed by employing up-down translinear loop and using of MOSFET transistors that operate in strong inversion saturation region. The converter offer advantages of two-quadrant input current, low circuit complexity, low supply voltage (1.2V) and immunity from the body effect. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.

Keywords: Current-mode, squarer/divider, low-pass filter, converter, translinear loop, RMS-to-DC.

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90 Modeling of Sensitivity for SPR Biosensors- New Aspects

Authors: Volodymyr Chegel

Abstract:

The computer modeling is carried out for parameter of sensitivity of optoelectronic chemical and biosensors, using phenomena of surface plasmon resonance (SPR). The physical model of SPR-sensor-s is described with (or without) of modifications of sensitive gold film surface by a dielectric layer. The variants of increasing of sensitivity for SPR-biosensors, constructed on the principle gold – dielectric – biomolecular layer are considered. Two methods of mathematical treatment of SPR-curve are compared – traditional, with estimation of sensor-s response as shift of the SPRcurve minimum and proposed, for system with dielectric layer, using calculating of the derivative in the point of SPR-curve half-width.

Keywords: Surface Plasmon Resonance, modeling, sensitivity, biosensor

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89 Library Aware Power Conscious Realization of Complementary Boolean Functions

Authors: Padmanabhan Balasubramanian, C. Ardil

Abstract:

In this paper, we consider the problem of logic simplification for a special class of logic functions, namely complementary Boolean functions (CBF), targeting low power implementation using static CMOS logic style. The functions are uniquely characterized by the presence of terms, where for a canonical binary 2-tuple, D(mj) ∪ D(mk) = { } and therefore, we have | D(mj) ∪ D(mk) | = 0 [19]. Similarly, D(Mj) ∪ D(Mk) = { } and hence | D(Mj) ∪ D(Mk) | = 0. Here, 'mk' and 'Mk' represent a minterm and maxterm respectively. We compare the circuits minimized with our proposed method with those corresponding to factored Reed-Muller (f-RM) form, factored Pseudo Kronecker Reed-Muller (f-PKRM) form, and factored Generalized Reed-Muller (f-GRM) form. We have opted for algebraic factorization of the Reed-Muller (RM) form and its different variants, using the factorization rules of [1], as it is simple and requires much less CPU execution time compared to Boolean factorization operations. This technique has enabled us to greatly reduce the literal count as well as the gate count needed for such RM realizations, which are generally prone to consuming more cells and subsequently more power consumption. However, this leads to a drawback in terms of the design-for-test attribute associated with the various RM forms. Though we still preserve the definition of those forms viz. realizing such functionality with only select types of logic gates (AND gate and XOR gate), the structural integrity of the logic levels is not preserved. This would consequently alter the testability properties of such circuits i.e. it may increase/decrease/maintain the same number of test input vectors needed for their exhaustive testability, subsequently affecting their generalized test vector computation. We do not consider the issue of design-for-testability here, but, instead focus on the power consumption of the final logic implementation, after realization with a conventional CMOS process technology (0.35 micron TSMC process). The quality of the resulting circuits evaluated on the basis of an established cost metric viz., power consumption, demonstrate average savings by 26.79% for the samples considered in this work, besides reduction in number of gates and input literals by 39.66% and 12.98% respectively, in comparison with other factored RM forms.

Keywords: Reed-Muller forms, Logic function, Hammingdistance, Algebraic factorization, Low power design.

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88 A Low-cost Reconfigurable Architecture for AES Algorithm

Authors: Yibo Fan, Takeshi Ikenaga, Yukiyasu Tsunoo, Satoshi Goto

Abstract:

This paper proposes a low-cost reconfigurable architecture for AES algorithm. The proposed architecture separates SubBytes and MixColumns into two parallel data path, and supports different bit-width operation for this two data path. As a result, different number of S-box can be supported in this architecture. The throughput and power consumption can be adjusted by changing the number of S-box running in this design. Using the TSMC 0.18μm CMOS standard cell library, a very low-cost implementation of 7K Gates is obtained under 182MHz frequency. The maximum throughput is 360Mbps while using 4 S-Box simultaneously, and the minimum throughput is 114Mbps while only using 1 S-Box

Keywords: AES, Reconfigurable architecture, low cost

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87 Design and Simulation Interface Circuit for Piezoresistive Accelerometers with Offset Cancellation Ability

Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on Instrumentation amplifier and it is useful for reducing offset In Wheatstone Bridge. The obtained gain is 645 with 1μv/°c Equivalent drift and 1.58mw power consumption. A Schmitt trigger and multiplexer circuit control output node. a high speed counter is designed in this work .the proposed circuit is designed and simulated In 0.18μm CMOS technology with 1.8v power supply.

Keywords: Piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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86 A High Precision Temperature Insensitive Current and Voltage Reference Generator

Authors: Kimberly Jane S. Uy, Patricia Angela Reyes-Abu, Wen Yaw Chung

Abstract:

A high precision temperature insensitive current and voltage reference generator is presented. It is specifically developed for temperature compensated oscillator. The circuit, designed using MXIC 0.5um CMOS technology, has an operating voltage that ranges from 2.6V to 5V and generates a voltage of 1.21V and a current of 6.38 ӴA. It exhibits a variation of ±0.3nA for the current reference and a stable output for voltage reference as the temperature is varied from 0°C to 70°C. The power supply rejection ratio obtained without any filtering capacitor at 100Hz and 10MHz is -30dB and -12dB respectively.

Keywords: Current reference, voltage reference, threshold voltage, temperature compensation, mobility.

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