Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 31447
Experimental Investigation of Adjacent Hall Structures Parameters

Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova


Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

Digital Object Identifier (DOI):

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1265


[1] Z. B. Randjelovic, M. Kayal, R. Popovic and H. Blanchard "Highly Sensitive Hall Magnetic Sensor Microsystem in CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 37, No 2, 2002, pp. 151-159.
[2] S. Lozanova, Ch. Roumenin "A novel parallel-field double - Hall microsensor with self-reduced offset and temperature drift", Science Direct, Procedia Engineering 5, 2012, pp. 617-620.
[3] C. S. Roumenin "Solid State Magnetic Sensor", Handbook of Sensors and Actuators, Vol. 2, Elsevier, 1994.
[4] C. Roumenin, S. Noykov, S. Lozanova "Three Contact Parallel-Field Hall Microsensor With Dinamically Reduced Offset And 1/f Noise", Comptes rendus de l-Academie bulgare des Sciences, Vol. 63, No. 4, 2012, pp. 609-615.