Experimental Investigation of Adjacent Hall Structures Parameters

Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

Abstract:

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329985

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