Commenced in January 2007
Paper Count: 31447
Experimental Investigation of Adjacent Hall Structures Parameters
Abstract:Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1329985Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1265
 Z. B. Randjelovic, M. Kayal, R. Popovic and H. Blanchard "Highly Sensitive Hall Magnetic Sensor Microsystem in CMOS Technology," IEEE Journal of Solid-State Circuits, vol. 37, No 2, 2002, pp. 151-159.
 S. Lozanova, Ch. Roumenin "A novel parallel-field double - Hall microsensor with self-reduced offset and temperature drift", Science Direct, Procedia Engineering 5, 2012, pp. 617-620.
 C. S. Roumenin "Solid State Magnetic Sensor", Handbook of Sensors and Actuators, Vol. 2, Elsevier, 1994.
 C. Roumenin, S. Noykov, S. Lozanova "Three Contact Parallel-Field Hall Microsensor With Dinamically Reduced Offset And 1/f Noise", Comptes rendus de l-Academie bulgare des Sciences, Vol. 63, No. 4, 2012, pp. 609-615.