Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 104

Search results for: silicon carbide

104 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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103 The Effect of Surface Modifiers on the Mechanical and Morphological Properties of Waste Silicon Carbide Filled High-Density Polyethylene

Authors: R. Dangtungee, A. Rattanapan, S. Siengchin

Abstract:

Waste silicon carbide (waste SiC) filled high-density polyethylene (HDPE) with and without surface modifiers were studied. Two types of surface modifiers namely; high-density polyethylene-grafted-maleic anhydride (HDPE-g-MA) and 3-aminopropyltriethoxysilane have been used in this study. The composites were produced using a two roll mill, extruder and shaped in a hydraulic compression molding machine. The mechanical properties of polymer composites such as flexural strength and modulus, impact strength, tensile strength, stiffness and hardness were investigated over a range of compositions. It was found that, flexural strength and modulus, tensile modulus and hardness increased, whereas impact strength and tensile strength decreased with the increasing in filler contents, compared to the neat HDPE. At similar filler content, the effect of both surface modifiers increased flexural modulus, impact strength, tensile strength and stiffness but reduced the flexural strength. Morphological investigation using SEM revealed that the improvement in mechanical properties was due to enhancement of the interfacial adhesion between waste SiC and HDPE.

Keywords: High-density polyethylene, HDPE-g-MA, mechanical properties, morphological properties, silicon carbide, waste silicon carbide.

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102 Investigation of Mesoporous Silicon Carbonization Process

Authors: N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev

Abstract:

In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Keywords: Silicon carbide, porous silicon, carbonization, electrochemical etching, diffusion.

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101 Characterization of Aluminium Alloy 6063 Hybrid Metal Matrix Composite by Using Stir Casting Method

Authors: Balwinder Singh

Abstract:

The present research is a paper on the characterization of aluminum alloy-6063 hybrid metal matrix composites using three different reinforcement materials (SiC, red mud, and fly ash) through stir casting method. The red mud was used in solid form, and particle size range varies between 103-150 µm. During this investigation, fly ash is received from Guru Nanak Dev Thermal Plant (GNDTP), Bathinda. The study has been done by using Taguchi’s L9 orthogonal array by taking fraction wt.% (SiC 5%, 7.5%, and 10% and Red Mud and Fly Ash 2%, 4%, and 6%) as input parameters with their respective levels. The study of the mechanical properties (tensile strength, impact strength, and microhardness) has been done by using Analysis of Variance (ANOVA) with the help of MINITAB 17 software. It is revealed that silicon carbide is the most significant parameter followed by red mud and fly ash affecting the mechanical properties, respectively. The fractured surface morphology of the composites using Field Emission Scanning Electron Microscope (FESEM) shows that there is a good mixing of reinforcement particles in the matrix. Energy-dispersive X-ray spectroscopy (EDS) was performed to know the presence of the phases of the reinforced material.

Keywords: Reinforcement, silicon carbide, fly ash, red mud.

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100 Study of Tribological Behaviour of Al6061/Silicon Carbide/Graphite Hybrid Metal Matrix Composite Using Taguchi's Techniques

Authors: Mohamed Zakaulla, A. R. Anwar Khan

Abstract:

Al6061 alloy base matrix, reinforced with particles of silicon carbide (10 wt %) and Graphite powder (1wt%), known as hybrid composites have been fabricated by liquid metallurgy route (stir casting technique) and optimized at different parameters like applied load, sliding speed and sliding distance by taguchi method. A plan of experiment generated through taguchi technique was used to perform experiments based on L27 orthogonal array. The developed ANOVA and regression equations are used to find the optimum coefficient of friction and wear under the influence of applied load, sliding speed and sliding distance. On the basis of “smaller the best” the dry sliding wear resistance was analysed and finally confirmation tests were carried out to verify the experimental results.

Keywords: Analysis of variance, dry sliding wear, Hybrid composite, orthogonal array, Taguchi technique.

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99 Design of SiC Capacitive Pressure Sensor with LC-Based Oscillator Readout Circuit

Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

Abstract:

This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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98 Influence of Raw Material Composition on Microstructure and Mechanical Properties of Nodular Cast Iron

Authors: Alan Vaško, Juraj Belan, Lenka Hurtalová, Eva Tillová

Abstract:

The aim of this study is to evaluate the influence of raw material composition on the microstructure, mechanical and fatigue properties and micromechanisms of failure of nodular cast iron. In order to evaluate the influence of charge composition, the structural analysis, mechanical and fatigue tests and microfractographic analysis were carried out on specimens of ten melts with different charge compositions. The basic charge of individual melts was formed by different ratio of pig iron and steel scrap and by different additive for regulation of chemical composition (silicon carbide or ferrosilicon). The results show differences in mechanical and fatigue properties, which are connected with the microstructure. SiC additive positively influences microstructure. Consequently, mechanical and fatigue properties of nodular cast iron are improved, especially in the melts with higher ratio of steel scrap in the charge.

Keywords: Nodular cast iron, silicon carbide, microstructure, mechanical properties.

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97 Atomic Force Microscopy (AFM)Topographical Surface Characterization of Multilayer-Coated and Uncoated Carbide Inserts

Authors: Samy E. Oraby, Ayman M. Alaskari

Abstract:

In recent years, scanning probe atomic force microscopy SPM AFM has gained acceptance over a wide spectrum of research and science applications. Most fields focuses on physical, chemical, biological while less attention is devoted to manufacturing and machining aspects. The purpose of the current study is to assess the possible implementation of the SPM AFM features and its NanoScope software in general machining applications with special attention to the tribological aspects of cutting tool. The surface morphology of coated and uncoated as-received carbide inserts is examined, analyzed, and characterized through the determination of the appropriate scanning setting, the suitable data type imaging techniques and the most representative data analysis parameters using the MultiMode SPM AFM in contact mode. The NanoScope operating software is used to capture realtime three data types images: “Height", “Deflection" and “Friction". Three scan sizes are independently performed: 2, 6, and 12 μm with a 2.5 μm vertical range (Z). Offline mode analysis includes the determination of three functional topographical parameters: surface “Roughness", power spectral density “PSD" and “Section". The 12 μm scan size in association with “Height" imaging is found efficient to capture every tiny features and tribological aspects of the examined surface. Also, “Friction" analysis is found to produce a comprehensive explanation about the lateral characteristics of the scanned surface. Configuration of many surface defects and drawbacks has been precisely detected and analyzed.

Keywords: SPM AFM contact mode, carbide inserts, scan size, surface defects, surface roughness, PSD.

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96 CMOS-Compatible Silicon Nanoplasmonics for On-Chip Integration

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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95 Contribution to the Study of Thermal Conductivity of Porous Silicon Used In Thermal Sensors

Authors: A. Ould-Abbas, M. Bouchaour, , M. Madani, D. Trari, O. Zeggai, M. Boukais, N.-E.Chabane-Sari

Abstract:

The porous silicon (PS), formed from the anodization of a p+ type substrate silicon, consists of a network organized in a pseudo-column as structure of multiple side ramifications. Structural micro-topology can be interpreted as the fraction of the interconnected solid phase contributing to thermal transport. The reduction of dimensions of silicon of each nanocristallite during the oxidation induced a reduction in thermal conductivity. Integration of thermal sensors in the Microsystems silicon requires an effective insulation of the sensor element. Indeed, the low thermal conductivity of PS consists in a very promising way in the fabrication of integrated thermal Microsystems.In this work we are interesting in the measurements of thermal conductivity (on the surface and in depth) of PS by the micro-Raman spectroscopy. The thermal conductivity is studied according to the parameters of anodization (initial doping and current density. We also, determine porosity of samples by spectroellipsometry.

Keywords: micro-Raman spectroscopy, mono-crysatl silicon, porous silicon, thermal conductivity

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94 Tool Wear of (Ti,W,Si)N-Coated WC-Ni-Based Cemented Carbide in Cutting Hardened Steel

Authors: Tadahiro Wada, Shinichi Enoki, Hiroyuki Hanyu

Abstract:

In this study, WC-Ni-based cemented carbides having different nickel contents were used as the substrate for cutting tool materials. Hardened steel was turned by a (Ti,W,Si)N-coated WC-Ni-based cemented carbide tool, and the tool wear was experimentally investigated. The following results were obtained: (1) In the (Ti,W,Si)N-coated WC-Ni-based cemented carbide, the hardness of the coating film was not much different from the content of the binding material, Ni, and the adhesion strength increased with a decrease in Ni content. (2) There is little difference between the wear progress of the (Ti,W,Si)N-coated WC-7%Ni-based cemented carbide tool and that of the (Ti,W,Si)N-coated WC-6%Co-based cemented carbide tool. (3) The wear progress of the (Ti,W,Si)N-coated WC-Ni-based cemented carbide became slower with a decrease in Ni content.

From the above, it is has become clear that WC-Ni-based cemented carbide can be used as a substrate for cutting tool materials.

Keywords: Rare metals, turning, WC-Ni-based cemented carbide, (Ti, W, Si)N coating film, hardened steel.

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93 Electrotechnology for Silicon Refining: Plasma Generator and Arc Furnace: Installations and Theoretical Base

Authors: Ashot Navasardian, Mariam Vardanian, Vladik Vardanian

Abstract:

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgical and chemical. In this article, we reviewed the electrotecnological installations and systems for semiconductor manufacturing. The main task is to design the installation which can produce SOG Silicon from river sand by one work unit.

Keywords: Metallurgical grade silicon, solar grade silicon, impurity, refining, plasma.

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92 The Effect of Carbon on Molybdenum in the Preparation of Microwave Induced Molybdenum Carbide

Authors: Abd. Rahim Yacob, Mohd Khairul Asyraf Amat Mustajab, Nurshaira Haifa Suhaimi

Abstract:

This study shows the effect of carbon towards molybdenum carbide alloy when exposed to Microwave. This technique is also known as Microwave Induced Alloying (MIA) for the preparation of molybdenum carbide. In this study ammonium heptamolybdate solution and carbon black powder were heterogeneously mixed and exposed to microwave irradiation for 2 minutes. The effect on amount of carbon towards the produced alloy on morphological and oxidation states changes during microwave is presented. In this experiment, it is expected carbon act as a reducing agent with the ratio 2:7 molybdenum to carbon as the optimum for the production of molybdenum carbide alloy. All the morphological transformations and changes in this experiment were followed and characterized using X-Ray Diffraction and FESEM.

Keywords: Carbon, molybdenum carbide, microwave induced alloying.

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91 Application of Recycled Tungsten Carbide Powder for Fabrication of Iron Based Powder Metallurgy Alloy

Authors: Yukinori Taniguchi, Kazuyoshi Kurita, Kohei Mizuta, Keigo Nishitani, Ryuichi Fukuda

Abstract:

Tungsten carbide is widely used as a tool material in metal manufacturing process. Since tungsten is typical rare metal, establishment of recycle process of tungsten carbide tools and restore into cemented carbide material bring great impact to metal manufacturing industry. Recently, recycle process of tungsten carbide has been developed and established gradually. However, the demands for quality of cemented carbide tool are quite severe because hardness, toughness, anti-wear ability, heat resistance, fatigue strength and so on should be guaranteed for precision machining and tool life. Currently, it is hard to restore the recycled tungsten carbide powder entirely as raw material for new processed cemented carbide tool. In this study, to suggest positive use of recycled tungsten carbide powder, we have tried to fabricate a carbon based sintered steel which shows reinforced mechanical properties with recycled tungsten carbide powder. We have made set of newly designed sintered steels. Compression test of sintered specimen in density ratio of 0.85 (which means 15% porosity inside) has been conducted. As results, at least 1.7 times higher in nominal strength in the amount of 7.0 wt.% was shown in recycled WC powder. The strength reached to over 600 MPa for the Fe-WC-Co-Cu sintered alloy. Wear test has been conducted by using ball-on-disk type friction tester using 5 mm diameter ball with normal force of 2 N in the dry conditions. Wear amount after 1,000 m running distance shows that about 1.5 times longer life was shown in designed sintered alloy. Since results of tensile test showed that same tendency in previous testing, it is concluded that designed sintered alloy can be used for several mechanical parts with special strength and anti-wear ability in relatively low cost due to recycled tungsten carbide powder.

Keywords: Tungsten carbide, recycle process, compression test, powder metallurgy, anti-wear ability.

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90 Carbide Structure and Fracture Toughness of High Speed Tool Steels

Authors: Jung-Ho Moon, Tae Kwon Ha

Abstract:

In the present study, M2 high speed steels were fabricated by using electro-slag rapid remelting process. Carbide structure was analysed and the fracture toughness and hardness were also measured after austenitization treatment at 1190 and 1210oC followed by tempering treatment at 535oC for billets with various diameters from 16 to 60 mm. Electro-slag rapid remelting (ESRR) process is an advanced ESR process combined by continuous casting and successfully employed in this study to fabricate a sound M2 high speed ingot. Three other kinds of commercial M2 high speed steels, produced by traditional method, were also analysed for comparison. Distribution and structure of eutectic carbides of the ESRR billet were found to be comparable to those of commercial alloy and so was the fracture toughness.

Keywords: High speed tool steel, eutectic carbide, microstructure, hardness, fracture toughness.

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89 Numerical Analysis of Flow through Abrasive Water Suspension Jet: The Effect of Garnet, Aluminum Oxide and Silicon Carbide Abrasive on Skin Friction Coefficient Due To Wall Shear and Jet Exit Kinetic Energy

Authors: Deepak D, Anjaiah D, Yagnesh Sharma N.

Abstract:

It is well known that the abrasive particles in the abrasive water suspension has significant effect on the erosion characteristics of the inside surface of the nozzle. Abrasive particles moving with the flow cause severe skin friction effect, there by altering the nozzle diameter due to wear which in turn reflects on the life of the nozzle for effective machining. Various commercial abrasives are available for abrasive water jet machining. The erosion characteristic of each abrasive is different. In consideration of this aspect, in the present work, the effect of abrasive materials namely garnet, aluminum oxide and silicon carbide on skin friction coefficient due to wall shear stress and jet kinetic energy has been analyzed. It is found that the abrasive material of lower density produces a relatively higher skin friction effect and higher jet exit kinetic energy.

Keywords: Abrasive water suspension jet, Skin friction coefficient, Jet kinetic energy, Particulate loading, Stokes number.

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88 A Novel Eccentric Lapping Method with Two Rotatable Lapping Plates for Finishing Cemented Carbide Balls

Authors: C. C. Lv, Y. L. Sun, D. W. Zuo

Abstract:

Cemented carbide balls are usually implemented in industry under the environment of high speed, high temperature, corrosiveness and strong collisions. However, its application is limited due to high fabrication cost, processing efficiency and quality. A novel eccentric lapping method with two rotatable lapping plates was proposed in this paper. A mathematical model was constructed to analyze the influence of each design parameter on this lapping method. To validate this new lapping method, an orthogonal experiment was conducted with cemented carbide balls (YG6). The simulation model was verified and the optimal lapping parameters were derived. The results show that the surface roundness of the balls reaches to 0.65um from 2um in 1 hour using this lapping method. So, using this novel lapping method, it can effectively improve the machining precision and efficiency of cemented carbide balls.

Keywords: Cemented carbide balls, eccentric lapping, high precision, lapping tracks, V-groove.

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87 Silicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is extracted to maximize the effective gain, thereby the responsivity. For typical lengths of the thin silicide film (10-20 Ðçm), the optimized thickness is estimated to be in the range of 1-2 nm, and only about 50-80% light power is absorbed to reach the maximum responsivity. Resonant waveguide-based SBPDs are proposed, which consist of a microloop, microdisc, or microring waveguide structure to allow light multiply propagating along the circular Si waveguide beneath the thin silicide film. Simulation results suggest that such resonant waveguide-based SBPDs have much higher repsonsivity at the resonant wavelengths as compared to the straight waveguidebased detectors. Some experimental results about Si waveguide-based SBPD are also reported.

Keywords: Infrared detector, Schottky-barrier, Silicon waveguide, Silicon photonics

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86 Light Emission Enhancement of Silicon Nanocrystals by Gold Layer

Authors: R. Karmouch

Abstract:

A thin gold metal layer was deposited on the top of silicon oxide films containing embedded Si nanocrystals (Si-nc). The sample was annealed in a gas containing nitrogen, and subsequently characterized by photoluminescence. We obtained 3-fold enhancement of photon emission from the Si-nc embedded in silicon dioxide covered with a Gold layer as compared with an uncovered sample. We attribute this enhancement to the increase of the spontaneous emission rate caused by the coupling of the Si-nc emitters with the surface plasmons (SP). The evolution of PL emission with laser irradiated time was also collected from covered samples, and compared to that from uncovered samples. In an uncovered sample, the PL intensity decreases with time, approximately with two decay constants. Although the decrease of the initial PL intensity associated with the increase of sample temperature under CW pumping is still observed in samples covered with a gold layer, this film significantly contributes to reduce the permanent deterioration of the PL intensity. The resistance to degradation of light-emitting silicon nanocrystals can be increased by SP coupling to suppress the permanent deterioration. Controlling the permanent photodeterioration can allow to perform a reliable optical gain measurement.

Keywords: Photodeterioration, Silicon Nanocrystals, Ion Implantation, Photoluminescence, Surface Plasmons.

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85 Effect of Concentration of Sodium Borohydrate on the Synthesis of Silicon Nanoparticles via Microemulsion Route

Authors: W. L. Liong, Srimala Sreekantan, Sabar D. Hutagalung

Abstract:

The effect of concentration of reduction agent of sodium borohydrate (NaBH4) on the properties of silicon nanoparticles synthesized via microemulsion route is reported. In this work, the concentration of the silicon tetrachloride (SiCl4) that served as silicon source with sodium hydroxide (NaOH) and polyethylene glycol (PEG) as stabilizer and surfactant, respectively, are keep fixed. Four samples with varied concentration of NaBH4 from 0.05 M to 0.20 M were synthesized. It was found that the lowest concentration of NaBH4 gave better formation of silicon nanoparticles.

Keywords: Microelmusion, nanoparticles, reduction, silicon

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84 Nanoindentation Behaviour and Microstructural Evolution of Annealed Single-Crystal Silicon

Authors: Woei-Shyan Lee, Shuo-Ling Chang

Abstract:

The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased.

Keywords: Nanoindentation, silicon, phase transformation, amorphous, annealing.

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83 Preparation and Cutting Performance of Boron-Doped Diamond Coating on Cemented Carbide Cutting Tools with High Cobalt Content

Authors: Zhaozhi Liu, Feng Xu, Junhua Xu, Xiaolong Tang, Ying Liu, Dunwen Zuo

Abstract:

Chemical vapor deposition (CVD) diamond coated cutting tool has excellent cutting performance, it is the most ideal tool for the processing of nonferrous metals and alloys, composites, nonmetallic materials and other difficult-to-machine materials efficiently and accurately. Depositing CVD diamond coating on the cemented carbide with high cobalt content can improve its toughness and strength, therefore, it is very important to research on the preparation technology and cutting properties of CVD diamond coated cemented carbide cutting tool with high cobalt content. The preparation technology of boron-doped diamond (BDD) coating has been studied and the coated drills were prepared. BDD coating were deposited on the drills by using the optimized parameters and the SEM results show that there are no cracks or collapses in the coating. Cutting tests with the prepared drills against the silumin and aluminum base printed circuit board (PCB) have been studied. The results show that the wear amount of the coated drill is small and the machined surface has a better precision. The coating does not come off during the test, which shows good adhesion and cutting performance of the drill.

Keywords: Cemented carbide with high cobalt content, CVD boron-doped diamond, cutting test, drill.

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82 Study of Fast Etching of Silicon for the Fabrication of Bulk Micromachined MEMS Structures

Authors: V. Swarnalatha, A. V. Narasimha Rao, P. Pal

Abstract:

The present research reports the investigation of fast etching of silicon for the fabrication of microelectromechanical systems (MEMS) structures using silicon wet bulk micromachining. Low concentration tetramethyl-ammonium hydroxide (TMAH) and hydroxylamine (NH2OH) are used as main etchant and additive, respectively. The concentration of NH2OH is varied to optimize the composition to achieve best etching characteristics such as high etch rate, significantly high undercutting at convex corner for the fast release of the microstructures from the substrate, and improved etched surface morphology. These etching characteristics are studied on Si{100} and Si{110} wafers as they are most widely used in the fabrication of MEMS structures as wells diode, transistors and integrated circuits.

Keywords: KOH, MEMS, micromachining, silicon, TMAH, wet anisotropic etching.

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81 Design of a Carbon Silicon Electrode for Iontophoresis Treatment towards Alopecia

Authors: Q. Wei, D. G. Hwang, Z. Mohy-Udin, D. H. Shin, J. H. Park, M. Y. Kang, J. H. Cho

Abstract:

This study presents design of a carbon silicon electrode for iontophorsis treatment towards alopecia. The alopecia is a medical description means loss of hair from the body. For solving this problem, the drug need to be delivered into the scalp, therefore, the iontophoresis was chosen to use in this treatment. However, almost common electrodes of iontophoresis device are made with metal material, the electrodes could give patients hurt when they using it, and it is hard to avoid the hair for attaching the hair. For this reason, an electrode is made with silicon material to decrease the hurt from the electrodes, and the carbon material is mixed in it for increasing conductance. The several cones with stainless material on the electrode make the electrode is able to void hair to attach the affected part. According to the results of a vivo-experiment, the carbon silicon electrode showed a good performance and in treatment comfortably.

Keywords: Carbon silicon, drug delivery system, iontophoresis

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80 Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters

Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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79 The Manufacturing of Metallurgical Grade Silicon from Diatomaceous Silica by an Induction Furnace

Authors: Shahrazed Medeghri, Saad Hamzaoui, Mokhtar Zerdali

Abstract:

The metallurgical grade silicon (MG-Si) is obtained from the reduction of silica (SiO2) in an induction furnace or an electric arc furnace. Impurities inherent in reduction process also depend on the quality of the raw material used. Among the applications of the silicon, it is used as a substrate for the photovoltaic conversion of solar energy and this conversion is wider as the purity of the substrate is important. Research is being done where the purpose is looking for new methods of manufacturing and purification of silicon, as well as new materials that can be used as substrates for the photovoltaic conversion of light energy. In this research, the technique of production of silicon in an induction furnace, using a high vacuum for fusion. Diatomaceous Silica (SiO2) used is 99 mass% initial purities, the carbon used is 6N of purity and the particle size of 63μm as starting materials. The final achieved purity of the material was above 50% by mass. These results demonstrate that this method is a technically reliable, and allows obtaining a better return on the amount 50% of silicon.

Keywords: Induction, amorphous silica, carbon microstructure, silicon.

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78 The Effect of Silicon on Cadmium Stress in Echium amoenum

Authors: Janet Amiri, Shekoofeh Entesari, Kourosh Delavar, Mahshid Saadatmand, Nasrin Aghamohammad Rafie

Abstract:

The beneficial effects of Si are mainly associated with its high deposition in plant tissue and enhancing their strength and rigidity. We investigated the role of Si against cadmium stress in (Echium C) in house green condition. When the seventh leaves was be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5, 0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that plants were treated with two levels of Cd (30 and 90 mM). The effects of Silicon and Cd were investigated on some physiological and biochemical parameters such as: lipid peroxidation (malondialdehyde (MDA) and other aldehydes, antocyanin and flavonoid content. Our results showed that Cd significantly increased MDA, other aldehydes, antocyanin and flavonoids content in Echium and silicon offset the negative effect and increased tolerance of Echium against Cd stress. From this results we concluded that Si increase membrane integrity and antioxidative ability in this plant against cd stress.

Keywords: Silicon, Cadmium, Echium, MDA, antocyanin, flavonoid

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77 An Electrically Modulatable Silicon Waveguide Grating Using an Implantation Technology

Authors: Qing Fang, Lianxi Jia, JunFeng Song, Xiaoguang Tu, Mingbin Yu, Andy Eu-jin Lim, Guo Qiang Lo

Abstract:

The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.

Keywords: Silicon photonics, Waveguide grating, Carrier-induced, Extinction-ratio modulation.

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76 Photoluminescence Study of Erbium-Mixed Alkylated Silicon Nanocrystals

Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks

Abstract:

Alkylated silicon nanocrystals (C11-SiNCs) were prepared successfully by galvanostatic etching of p-Si(100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract C11-SiNCs from porous silicon. Erbium trichloride was added to alkylated SiNCs using a simple mixing chemical route. To the best of our knowledge, this is the first investigation on mixing SiNCs with erbium ions (III) by this chemical method. The chemical characterization of C11-SiNCs and their mixtures with Er3+(Er/C11-SiNCs) were carried out using X-ray photoemission spectroscopy (XPS). The optical properties of C11- SiNCs and their mixtures with Er3+ were investigated using Raman spectroscopy and photoluminescence (PL). The erbium mixed alkylated SiNCs shows an orange PL emission peak at around 595 nm that originates from radiative recombination of Si. Er/C11-SiNCs mixture also exhibits a weak PL emission peak at 1536 nm that originates from the intra-4f transition in erbium ions (Er3+). The PL peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to three times as compared to pure C11-SiNCs. The collected data suggest that this chemical mixing route leads instead to a transfer of energy from erbium ions to alkylated SiNCs.

Keywords: Photoluminescence, Silicon Nanocrystals, Erbium, Raman Spectroscopy.

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75 Effect of Surface Pretreatments on Nanocrystalline Diamond Deposited On Silicon Nitride Substrates

Authors: D.N Awang Sh'ri, E. Hamzah

Abstract:

The deposition of diamond films on a Si3N4 substrate is an attractive technique for industrial applications because of the excellent properties of diamond. Pretreatment of substrate is very important prior to diamond deposition to promote nucleation and adhesion between coating and substrate. Deposition of nanocrystalline diamonds films on silicon nitride substrate have been carried out by HF-CVD technique using mixture of methane and hydrogen gases. Different pretreatment of substrate including chemical etching consists of hot acid etching and basic etching and mechanical etching were used to study the quality of diamond formed on the substrate. The structure and morphology of diamond coating have been studied using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM) while diamond film quality has been characterized using Raman spectroscopy. AFM was used to investigate the effect of chemical etching and mechanical pretreatment on the surface roughness of the substrates and the resultant morphology of nanocrystalline diamond. It was found that diamond film deposited on as-received, basic etched and grinded substrate shows the morphology of cauliflower while blasted and acidic etched substrates produce smooth, continuous diamond film. However, the Raman investigation did not show any deviation in quality of diamond film for any pretreatment.

Keywords: Nanocrystalline diamond, Chemical VaporDeposition, Pretreatment, Silicon Nitride

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