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An Electrically Modulatable Silicon Waveguide Grating Using an Implantation Technology

Authors: Qing Fang, Junfeng Song, Lianxi Jia, Xiaoguang Tu, Mingbin Yu, Andy Eu-jin Lim, Guo Qiang Lo

Abstract:

The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.

Keywords: Silicon Photonics, Waveguide grating, Carrier-induced, Extinction-ratio modulation

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1339167

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References:


[1] H. Tsuda, “Fiber Bragg grating vibration-sensing system, insensitive to Bragg wavelength and employing fiber ring laser,” Opt. Lett. 35, pp. 2349-2351 (2010).
[2] Y. G. Han and S. B. Lee, “Tunable dispersion compensator based on uniform fiber Bragg grating and its application to tunable pulse repetition-rate multiplication,” Opt. Express 13, pp. 9224-9229 (2005).
[3] D. T. H. Tan, et al., “Cladding-modulated Bragg grating in silicon waveguides,” Opt. Lett. 34, pp. 1357-1359 (2006).
[4] S. Honda, et al., “Largely-tunable wideband Bragg gratings fabricated on SOI rib waveguides employed by deep-RIE,” Electron. Lett. 43, pp. 630-631 (2007).
[5] G. Jiang, et al., “Slab-modulated sidewall Bragg grating in silicon-on-insulator ridge waveguides,” IEEE Photon. Technol. 23, pp. 6-8 (2011).
[6] Q. Fang, et al., “Carrier-induced silicon Bragg grating filters with a p-i-n junction,” IEEE Photon. Technol. 25, pp. 810-812 (2013).