An Electrically Modulatable Silicon Waveguide Grating Using an Implantation Technology
The first pn-type carrier-induced silicon Bragg-grating filter is demonstrated. The extinction-ratio modulations are 11.5 dB and 10 dB with reverse and forward biases, respectively. 8-Gpbs data rate is achieved with a reverse bias.
Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1339167Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1197
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