Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30123
Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1127312

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 665

References:


[1] G. Kaupp, “Prediction of reactivity in solid-state chemistry,” in Making Crystal by Design, D. Braga and F. Greponi Eds, Wiley, 2007, pp. 87-147.
[2] S. A. Kukushkin and A. V. Osipov, “A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles,” J. Appl. Phys., vol. 113, pp. 024909 1-7, 2013.
[3] S. A. Kukushkin, A. V. Osipov, and N. A. Feoktistov, “Synthesis of Epitaxial Silicon Carbide Films through the Substitution of Atoms in the Silicon Crystal Lattice: A Review,” Phys. Solid State, vol. 56, pp.1507-1535, 2014.
[4] S. A. Kukushkin and A. V. Osipov, “Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films,” J. Phys. D: Appl. Phys. 47, 313001 (41p.) (2014).
[5] S. A. Kukushkin and A. V. Osipov, “First-Order Phase Transition through an Intermediate State,” Phys. Solid State, vol. 56, pp. 792-799, 2014.
[6] S. A. Kukushkin and A. V. Osipov, “Phase Equilibrium in the Formation of Silicon Carbide by Topochemical Conversion of Silicon,” Phys. Solid State, vol. 56, pp. 747-751, 2016.
[7] S. A. Kukushkin, A. V. Osipov, R. S. Telyatnik, “Elastic Interaction of Point Defects in Cubic and Hexagonal Crystals,” Phys. Solid State, vol. 57, pp. 971-980, 2016.
[8] S. A. Kukushkin, A. V. Lukyanov, A. V. Osipov, and N. A. Feoktistov, “Epitaxial Silicon Carbide on a 6 inch Silicon Wafer,” Technical Physics Letters, vol. 40, No. 1, pp. 36–39, 2014.