Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 31108
High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Kim, S. J. Joo, S. C. Kim


There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High Temperature, SiC, hydrogen sensor, Ta2O5 dielectric layer

Digital Object Identifier (DOI):

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1708


[1] Y. M. Wong, W. P. Kang, J. Davison, A. Wisitsora, and K. L. Soh, "A novel microelectronic gas sensor utilizing carbon nanotubes for hydrogen gas detection", Sens. Actuators B, vol. 93, pp. 327-332, 2003
[2] S. J. Kim, "The effect on the gas selectivity of CNT-based gas sensors by binder in SWNT/silane sol solution", J. of IEEE Sensors, vol. 10, pp. 3505-3508, 2009
[3] G. Eranna, B.C. Joshi, D.P. Runthala, and R.P. Gupta, "Oxide materials for development of integrated gas sensors- a comprehensive review", Critical Rev. in Sol. Stat. and Mater. Sci., vol. 29, pp. 111-188, 2004
[4] L. Promsong, and M. Sriyudthsak, "Thin tin-oxide film alcohol-gas sensor, Sens. Actuators B, vol. 25, pp. 504-506, 1995
[5] A. Trinchi, S. Kandasamy, and W. Wlodarski, "High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices", Sens. Actuators B, vol. 133, pp. 705-716, 2008
[6] M. T. Soo, K. Y. Cheng, and A. Noor, "Advances of SiC-based MOS capacitor hydrogen sensors for harsh environment applications", Sens. Actuators B, vol. 151, pp. 39-55, 2010
[7] J. Yu, G. Chen, C.X. Li, M. Shafiei, J.Z. Ou, J. du Plessis, K. Kalantar-zadeh, P.T. Lai, and W. Wlodarski, "Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates", Sens. Actuators A, vol. 172, pp. 9-14, 2011
[8] L.P. Martin, A-Q Pham, R.S. Glass, "Electrochemical hydrogen sensors for safety monitoring", Solid Stat. Ion., vol. 175, pp. 527-530, 2004
[9] A.L Spetz, A. Baranzahi, P. Tobias, I. Lundstrom, "High temperature sensors based on metal-insulator-silicon carbide devices", Phys. Stat. Sol. A, vol. 162, pp. 493-551, 1997
[10] N.G. Wright, and A.B. Horsfall, "SiC sensors:a review", J. of Phys. D: Appl. Phys., vol. 40, pp. 6345-6354, 2007
[11] R.N. Ghosh, and P. Tobias, "SiC field-effect devices operating at high temperature", J. of Electron. Mater., vol. 34, pp. 345-350, 2005
[12] C. Chaneliere, J. L. Autran, R.A.B. Devine, and B. Balland, "Tantalum pentoxide thin films for advanced dielectric applications", Mater. Sci. and Eng., vol. R22, pp. 269-322, 1998