@article{(Open Science Index):https://publications.waset.org/pdf/10013257,
	  title     = {Thermoelectric Properties of Doped Polycrystalline Silicon Film},
	  author    = {Li Long and  Thomas Ortlepp},
	  country	= {},
	  institution	= {},
	  abstract     = {The transport properties of carriers in polycrystalline silicon film affect the performance of polycrystalline silicon-based devices. They depend strongly on the grain structure, grain boundary trap properties and doping concentration, which in turn are determined by the film deposition and processing conditions. Based on the properties of charge carriers, phonons, grain boundaries and their interactions, the thermoelectric properties of polycrystalline silicon are analyzed with the relaxation time approximation of the Boltzmann transport equation. With this approach, thermal conductivity, electrical conductivity and Seebeck coefficient as a function of grain size, trap properties and doping concentration can be determined. Experiment on heavily doped polycrystalline silicon is carried out and measurement results are compared with the model.},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {17},
	  number    = {9},
	  year      = {2023},
	  pages     = {115 - 122},
	  ee        = {https://publications.waset.org/pdf/10013257},
	  url   	= {https://publications.waset.org/vol/201},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 201, 2023},
	}