%0 Journal Article
	%A A. Ould-Abbas and  M. Bouchaour and   and  M. Madani and  D. Trari and  O. Zeggai and  M. Boukais and  N.-E.Chabane-Sari
	%D 2012
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 61, 2012
	%T Contribution to the Study of Thermal Conductivity of Porous Silicon Used In Thermal Sensors
	%U https://publications.waset.org/pdf/15889
	%V 61
	%X The porous silicon (PS), formed from the anodization
of a p+ type substrate silicon, consists of a network organized in a
pseudo-column as structure of multiple side ramifications. Structural
micro-topology can be interpreted as the fraction of the interconnected
solid phase contributing to thermal transport. The
reduction of dimensions of silicon of each nanocristallite during the
oxidation induced a reduction in thermal conductivity. Integration of
thermal sensors in the Microsystems silicon requires an effective
insulation of the sensor element. Indeed, the low thermal conductivity
of PS consists in a very promising way in the fabrication of integrated
thermal Microsystems.In this work we are interesting in the
measurements of thermal conductivity (on the surface and in depth)
of PS by the micro-Raman spectroscopy. The thermal conductivity is
studied according to the parameters of anodization (initial doping and
current density. We also, determine porosity of samples by
spectroellipsometry.
	%P 111 - 113