%0 Journal Article
	%A V.Fathipour and  M. A. Malakootian and  S. Fathipour and  M. Fathipour
	%D 2010
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 45, 2010
	%T Analysis of a Novel Strained Silicon RF LDMOS
	%U https://publications.waset.org/pdf/4215
	%V 45
	%X In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.

	%P 1379 - 1383