@article{(Open Science Index):https://publications.waset.org/pdf/4215,
	  title     = {Analysis of a Novel Strained Silicon RF LDMOS},
	  author    = {V.Fathipour and  M. A. Malakootian and  S. Fathipour and  M. Fathipour},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage.
},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {4},
	  number    = {9},
	  year      = {2010},
	  pages     = {1379 - 1383},
	  ee        = {https://publications.waset.org/pdf/4215},
	  url   	= {https://publications.waset.org/vol/45},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 45, 2010},
	}