@article{(Open Science Index):https://publications.waset.org/pdf/4215, title = {Analysis of a Novel Strained Silicon RF LDMOS}, author = {V.Fathipour and M. A. Malakootian and S. Fathipour and M. Fathipour}, country = {}, institution = {}, abstract = {In this paper we propose a novel RF LDMOS structure which employs a thin strained silicon layer at the top of the channel and the N-Drift region. The strain is induced by a relaxed Si0.8 Ge0.2 layer which is on top of a compositionally graded SiGe buffer. We explain the underlying physics of the device and compare the proposed device with a conventional LDMOS in terms of energy band diagram and carrier concentration. Numerical simulations of the proposed strained silicon laterally diffused MOS using a 2 dimensional device simulator indicate improvements in saturation and linear transconductance, current drivability, cut off frequency and on resistance. These improvements are however accompanied with a suppression in the break down voltage. }, journal = {International Journal of Electrical and Computer Engineering}, volume = {4}, number = {9}, year = {2010}, pages = {1379 - 1383}, ee = {https://publications.waset.org/pdf/4215}, url = {https://publications.waset.org/vol/45}, bibsource = {https://publications.waset.org/}, issn = {eISSN: 1307-6892}, publisher = {World Academy of Science, Engineering and Technology}, index = {Open Science Index 45, 2010}, }