Search results for: high voltage circuit breakers

Authors: Julio Cesar Lopes de Oliveira, Carlos Henrique Gonc¸alves Treviso

Abstract:

The shortage of the automotive market in relation to options for sources of high power car audio systems, led to development of this work. Thus, we developed a source with stabilized voltage with 4320 W effective power. Designed to the voltage of 14.4 V and a choice of two currents: 30 A load option in battery banks and 300 A at full load. This source can also be considered as a source of general use dedicated commercial with a simple control circuit in analog form based on discrete components. The assembly of power circuit uses a methodology for higher power than the initially stipulated.

Keywords: DC-DC power converters, converters, power convertion, pulse width modulation converters.

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Authors: Surapong Siripongdee, Witthaya Mekhum

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This article presents a voltage-mode universal biquadratic filter performing simultaneous 3 standard functions: lowpass, high-pass and band-pass functions, employing differential different current conveyor (DDCC) and current controlled current conveyor (CCCII) as active element. The features of the circuit are that: the quality factor and pole frequency can be tuned independently via the input bias currents: the circuit description is very simple, consisting of 1 DDCC, 2 CCCIIs, 2 electronic resistors and 2 grounded capacitors. Without requiring component matching conditions, the proposed circuit is very appropriate to further develop into an integrated circuit. The PSPICE simulation results are depicted. The given results agree well with the theoretical anticipation.

Keywords: Filter, DDCC, CCCII, Analog circuit, Voltagemode, PSPICE

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Authors: Néjib Hassen, Thouraya Ettaghzouti, Kamel Besbes

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In this paper, a modified CCCII is presented. We have used a current mirror with low supply voltage. This circuit is operated at low supply voltage of ±1V. Tspice simulations for TSMC 0.18μm CMOS Technology has shown that the current and voltage bandwidth are respectively 3.34GHz and 4.37GHz, and parasitic resistance at port X has a value of 169.320 for a control current of 120μA. In order to realize this circuit, we have implemented in this first step a universal current mode filter where the frequency can reach the 134.58MHz. In the second step, we have implemented two simulated inductors: one floating and the other grounded. These two inductors are operated in high frequency and variable depending on bias current I0. Finally, we have used the two last inductors respectively to implement two sinusoidal oscillators domains of frequencies respectively: [470MHz, 692MHz], and [358MHz, 572MHz] for bias currents I0 [80μA, 350μA].

Keywords: Current controlled current conveyor CCCII, floating inductor, grounded inductor, oscillator, universal filter.

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Authors: H. Asiaban, E. Farshidi

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This paper presents a new true RMS-to-DC converter circuit based on a square-root-domain squarer/divider. The circuit is designed by employing up-down translinear loop and using of MOSFET transistors that operate in strong inversion saturation region. The converter offer advantages of two-quadrant input current, low circuit complexity, low supply voltage (1.2V) and immunity from the body effect. The circuit has been simulated by HSPICE. The simulation results are seen to conform to the theoretical analysis and shows benefits of the proposed circuit.

Keywords: Current-mode, squarer/divider, low-pass filter, converter, translinear loop, RMS-to-DC.

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Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

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The power converter that feeds high-frequency, highvoltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively lowfrequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid overvoltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: High-voltage transformer, Resonant converter, Softcommutation.

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Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter.

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Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

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In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: Optical communication systems (OCS), Circuit modeling, breakdown voltage, SAGCM APD

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Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

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This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (V_th) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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Authors: S. Pattnaik, A. K. Panda, Aroul K., K. K. Mahapatra

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This paper proposes a zero-voltage transition (ZVT) PWM synchronous buck converter, which is designed to operate at low output voltage and high efficiency typically required for portable systems. To make the DC-DC converter efficient at lower voltage, synchronous converter is an obvious choice because of lower conduction loss in the diode. The high-side MOSFET is dominated by the switching losses and it is eliminated by the soft switching technique. Additionally, the resonant auxiliary circuit designed is also devoid of the switching losses. The suggested procedure ensures an efficient converter. Theoretical analysis, computer simulation, and experimental results are presented to explain the proposed schemes.

Keywords: DC-DC Converter, Switching loss, Synchronous Buck, Soft switching, ZVT.

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Authors: Mahmud Fotuhi-Firuzabad, Saeed Afshar

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This paper presents the results of a preventive maintenance application-based study and modeling of failure rates in breakers of electrical distribution systems. This is a critical issue in the reliability assessment of a system. In the analysis conducted in this paper, the impacts of failure rate variations caused by a preventive maintenance are examined. This is considered as a part of a Reliability Centered Maintenance (RCM) application program. A number of load point reliability indices is derived using the mathematical model of the failure rate, which is established using the observed data in a distribution system.

Keywords: Reliability-Centered Maintenance (RCM), failure rate, preventive maintenance (PM), Distribution System Reliability.

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Authors: Pedro Luis Ferrer Penalver, Edmundo da Silva Braga

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In this paper, the performance of a simple surge protection for a direct current circuit was simulated. The protection circuit was developed from modified electric macro models of a gas discharge tube and a transient voltage suppressor diode. Moreover, a combination wave generator circuit was used as source of energy surges. The simulations showed that the circuit presented ensures immunity corresponding with test level IV of the IEC 61000-4-5:2014 international standard. The developed circuit can be modified to meet the requirements of any other equipment to be protected. Similarly, the parameters of the combination wave generator can be changed to provide different surge amplitudes.

Keywords: Combination wave generator, IEC 61000-4-5, Pspice simulation, surge protection.

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Authors: S. Abdollahi Pour, M. Saneei

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This paper propose a new circuit design which monitor total leakage current during standby mode and generates the optimal reverse body bias voltage, by using the adaptive body bias (ABB) technique to compensate die-to-die parameter variations. Design details of power monitor are examined using simulation framework in 65nm and 32nm BTPM model CMOS process. Experimental results show the overhead of proposed circuit in terms of its power consumption is about 10 μW for 32nm technology and about 12 μW for 65nm technology at the same power supply voltage as the core power supply. Moreover the results show that our proposed circuit design is not far sensitive to the temperature variations and also process variations. Besides, uses the simple blocks which offer good sensitivity, high speed, the continuously feedback loop.

Keywords: leakage current, leakage power monitor, body biasing, low power

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Authors: AL.AL, M. B. I. Reaz, S. M. A. Motakabber, Mohd Alauddin Mohd Ali

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Nowadays it is a trend for electronic circuit designers to integrate all system components on a single-chip. This paper proposed the design of a single-chip proportional to absolute temperature (PTAT) sensor including a voltage reference circuit using CEDEC 0.18m CMOS Technology. It is a challenge to design asingle-chip wide range linear response temperature sensor for many applications. The channel widths between the compensation transistor and the reference transistor are critical to design the PTAT temperature sensor circuit. The designed temperature sensor shows excellent linearity between -100°C to 200° and the sensitivity is about 0.05mV/°C. The chip is designed to operate with a single voltage source of 1.6V.

Keywords: PTAT, single-chip circuit, linear temperature sensor, CMOS technology.

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Authors: M. M. Karkhanehchi, A. Ammani

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A simple analytical model has been developed to optimize biasing conditions for obtaining maximum linearity among lattice-matched, pseudomorphic and metamorphic HEMT types as well as enhancement and depletion HEMT modes. A nonlinear current-voltage model has been simulated based on extracted data to study and select the most appropriate type and mode of HEMT in terms of a given gate-source biasing voltage within the device so as to employ the circuit for the highest possible output current or voltage linear swing. Simulation results can be used as a basis for the selection of optimum gate-source biasing voltage for a given type and mode of HEMT with regard to a circuit design. The consequences can also be a criterion for choosing the optimum type or mode of HEMT for a predetermined biasing condition.

Keywords: Biasing, characteristic, linearity, simulation.

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Authors: M. Lenzhofer, D. Holzmann, A. Tortschanoff

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In this paper we present a new multichannel high voltage driver box to connect up to six MOEMS mirror devices to it that have resonant and also quasistatically driven actuating electrodes. It is possible to drive all resonant axes synchronously while the amplitude of them can individually be controlled by separate microcontrollers that also operate the quasistatic axes. Circuit simulations are compared with the measurements done on the real system and also show the robust driving performance of a MOEMS mirror.

Keywords: MOEMS, scanner mirror, electrostatic driver.

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Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

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This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: Voltage sense amplifier, voltage transition, node stabilization, and biasing circuits.

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Authors: Buket Turan Azizoğlu

Abstract:

In switch mode power inverters, small sized inverters can be obtained by increasing the switching frequency. Switching frequency increment causes high driver losses. Also, high dt di and dt dv produced by the switching action creates high Electromagnetic Interference (EMI) and Radio Frequency Interference (RFI). In this paper, a series half bridge series resonant inverter circuit is simulated and evaluated practically to demonstrate the turn-on and turn-off conditions during zero or close to zero voltage switching. Also, the reverse recovery current effects of the body diode of the MOSFETs were investigated by operating above and below resonant frequency.

Keywords: Driver losses, Half Bridge series resonant inverter, Zero Voltage Switching

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Authors: Shipra Upadhyay , R. K. Nagaria, R. A. Mishra

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In this paper, we present the design and experimental evaluation of complementary energy path adiabatic logic (CEPAL) based 1 bit full adder circuit. A simulative investigation on the proposed full adder has been done using VIRTUOSO SPECTRE simulator of cadence in 0.18μm UMC technology and its performance has been compared with the conventional CMOS full adder circuit. The CEPAL based full adder circuit exhibits the energy saving of 70% to the conventional CMOS full adder circuit, at 100 MHz frequency and 1.8V operating voltage.

Keywords: Adiabatic, CEPAL, full adder, power clock

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Authors: Rishikesh Pandey, Maneesha Gupta

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A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: Ming-Ta Yang, Jyh-Cherng Gu, Chun-Wei Huang, Jin-Lung Guan

Abstract:

Time base maintenance (TBM) is conventionally applied by the power utilities to maintain circuit breakers (CBs), transformers, bus bars and cables, which may result in under maintenance or over maintenance. As information and communication technology (ICT) industry develops, the maintenance policies of many power utilities have gradually changed from TBM to condition base maintenance (CBM) to improve system operating efficiency, operation cost and power supply reliability. This paper discusses the feasibility of using intelligent electronic devices (IEDs) to construct a CB CBM management platform. CBs in power substations can be monitored using IEDs with additional logic configuration and wire connections. The CB monitoring data can be sent through intranet to a control center and be analyzed and integrated by the Elipse Power Studio software. Finally, a human-machine interface (HMI) of supervisory control and data acquisition (SCADA) system can be designed to construct a CBM management platform to provide maintenance decision information for the maintenance personnel, management personnel and CB manufacturers.

Keywords: Circuit breaker, Condition base maintenance, Intelligent electronic device, Time base maintenance, SCADA.

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Authors: Kritphon Phanruttanachai, Winai Jaikla

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This article presents a current-mode quadrature oscillator using differential different current conveyor (DDCC) and voltage differencing transconductance amplifier (VDTA) as active elements. The proposed circuit is realized fro m a non-inverting lossless integrator and an inverting second order low-pass filter. The oscillation condition and oscillation frequency can be electronically/orthogonally controlled via input bias currents. The circuit description is very simple, consisting of merely 1 DDCC, 1 VDTA, 1 grounded resistor and 3 grounded capacitors. Using only grounded elements, the proposed circuit is then suitable for IC architecture. The proposed oscillator has high output impedance which is easy to cascade or dive the external load without the buffer devices. The PSPICE simulation results are depicted, and the given results agree well with the theoretical anticipation. The power consumption is approximately 1.76mW at ±1.25V supply voltages.

Keywords: Current-mode, oscillator, integrated circuit, DDCC, VDTA

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Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

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In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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Authors: Rafik Medjoudj, Rabah Medjoudj, D. Aissani

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The electrical substation components are often subject to degradation due to over-voltage or over-current, caused by a short circuit or a lightning. A particular interest is given to the circuit breaker, regarding the importance of its function and its dangerous failure. This component degrades gradually due to the use, and it is also subject to the shock process resulted from the stress of isolating the fault when a short circuit occurs in the system. In this paper, based on failure mechanisms developments, the wear out of the circuit breaker contacts is modeled. The aim of this work is to evaluate its reliability and consequently its residual lifetime. The shock process is based on two random variables such as: the arrival of shocks and their magnitudes. The arrival of shocks was modeled using homogeneous Poisson process (HPP). By simulation, the dates of short-circuit arrivals were generated accompanied with their magnitudes. The same principle of simulation is applied to the amount of cumulative wear out contacts. The objective reached is to find the formulation of the wear function depending on the number of solicitations of the circuit breaker.

Keywords: reliability, short-circuit, models of shocks.

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Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

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The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from I_D-V_G characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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Authors: Jin-Lung Guan, Jyh-Cherng Gu, Ming-Ta Yang, Hsin-Hung Chang, Chun-Wei Huang, Shao-Yu Huang

Abstract:

One of the most important power quality issues is voltage flicker. Nowadays this issue also impacts the power system all over the world. The fact of the matter is that the more and the larger capacity of wind generator has been installed. Under unstable wind power situation, the variation of output current and voltage have caused trouble to voltage flicker. Hence, the major purpose of this study is to analyze the impact of wind generator on voltage flicker of power system. First of all, digital simulation and analysis are carried out based on wind generator operating under various system short circuit capacity, impedance angle, loading, and power factor of load. The simulation results have been confirmed by field measurements.

Keywords: Wind Generator, Voltage Flicker

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Authors: V. Suresh Babu, Haseena P. S., Varun P. Gopi, M. R. Baiju

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In this paper a scheme is proposed for generating a programmable current reference which can be implemented in the CMOS technology. The current can be varied over a wide range by changing an external voltage applied to one of the control gates of FGMOS (Floating Gate MOSFET). For a range of supply voltages and temperature, CMOS current reference is found to be dependent, this dependence is compensated by subtracting two current outputs with the same dependencies on the supply voltage and temperature. The system performance is found to improve with the use of FGMOS. Mathematical analysis of the proposed circuit is done to establish supply voltage and temperature independence. Simulation and performance evaluation of the proposed current reference circuit is done using TANNER EDA Tools. The current reference shows the supply and temperature dependencies of 520 ppm/V and 312 ppm/oC, respectively. The proposed current reference can operate down to 0.9 V supply.

Keywords: Floating Gate MOSFET, current reference, self bias scheme, temperature independency, supply voltage independency.

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Authors: Abdar Ali, Rizwan Ullah, Zahid Ullah

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This paper focuses on the study of DC-to-DC converters, which are suitable for low-voltage high-power applications. The output voltages generated by renewable energy sources such as photovoltaic arrays and fuel cell stacks are generally low and required to be increased to high voltage levels. Development of DC-to-DC converters, which provide high step-up voltage conversion ratios with high efficiencies and low voltage stresses, is one of the main issues in the development of renewable energy systems. A procedure for three converters−conventional DC-to-DC converter, interleaved boost converter, and isolated flyback based converter, is illustrated for a given set of specifications. The selection among the converters for the given application is based on the voltage conversion ratio, efficiency, and voltage stresses.

Keywords: Flyback converter, interleaved boost, photovoltaic array, fuel cell, switch stress, voltage conversion ratio, renewable energy.

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Authors: H. Sediki, S. Djennoune

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The switching lag-time and the voltage drop across the power devices cause serious waveform distortions and fundamental voltage drop in pulse width-modulated inverter output. These phenomenons are conspicuous when both the output frequency and voltage are low. To estimate the output voltage from the PWM reference signal it is essential to take account of these imperfections and to correct them. In this paper, on-line compensation method is presented. It needs three simple blocs to add at the ideal reference voltages. This method does not require any additional hardware circuit and off- line experimental measurement. The paper includes experimental results to demonstrate the validity of the proposed method. It is applied, finally, in case of indirect vector controlled induction machine and implemented using dSpace card.

Keywords: Dead time, field-oriented control, Induction motor, PWM inverter, voltage drop.

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Authors: Zina Saheb, Ezz El-Masry, Jean-François Bousquet

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This paper presents an enhanced efficiency simultaneous dual band energy harvesting system for wireless body area network. A bulk biasing is used to enhance the efficiency of the adapted rectifier design to reduce V_th of MOSFET. The presented circuit harvests the radio frequency (RF) energy from two frequency bands: 1 GHz and 2.4 GHz. It is designed with TSMC 65-nm CMOS technology and high quality factor dual matching network to boost the input voltage. Full circuit analysis and modeling is demonstrated. The simulation results demonstrate a harvester with an efficiency of 23% at 1 GHz and 46% at 2.4 GHz at an input power as low as -30 dBm.

Keywords: Energy harvester, simultaneous, dual band, CMOS, differential rectifier, voltage boosting, TSMC 65nm.

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Authors: Gianluca Cornetta, Abdellah Touhafi, David J. Santos, Jose Manuel Vazquez

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A direct downconversion receiver implemented in 0.13 μm 1P8M process is presented. The circuit is formed by a single-end LNA, an active balun for conversion into balanced mode, a quadrature double-balanced passive switch mixer and a quadrature voltage-controlled oscillator. The receiver operates in the 2.4 GHz ISM band and complies with IEEE 802.15.4 (ZigBee) specifications. The circuit exhibits a very low noise figure of only 2.27 dB and dissipates only 14.6 mW with a 1.2 V supply voltage and is hence suitable for low-power applications.

Keywords: LNA, Active Balun, Passive Mixer, VCO, IEEE 802.15.4(ZigBee).

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