@article{(Open Science Index):https://publications.waset.org/pdf/10001846,
	  title     = {SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp},
	  author    = {Hyun-Young Kim and  Chung-Kwang Lee and  Han-Hee Cho and  Sang-Woon Cho and  Yong-Seo Koo},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, we proposed a novel SCR (Silicon Controlled
Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O
and power clamp. The proposed device has a higher holding voltage
characteristic than conventional SCR. These characteristics enable to have
latch-up immunity under normal operating conditions as well as superior full
chip ESD protection. The proposed device was analyzed to figure out
electrical characteristics and tolerance robustness in term of individual
design parameters (D1, D2, D3). They are investigated by using the
Synopsys TCAD simulator. As a result of simulation, holding voltage
increased with different design parameters. The holding voltage of the
proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD
device with the high holding voltage is proposed. In the simulation results,
2-stack has holding voltage of 6.8V and 3-stack has holding voltage of
10.5V. The simulation results show that holding voltage of stacking
structure can be larger than the operation voltage of high-voltage
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {9},
	  number    = {6},
	  year      = {2015},
	  pages     = {595 - 598},
	  ee        = {https://publications.waset.org/pdf/10001846},
	  url   	= {https://publications.waset.org/vol/102},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 102, 2015},