%0 Journal Article
	%A A. Ahadpour Shal and  A. Ghadimi and  A. Azadbar
	%D 2011
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 60, 2011
	%T Analysis and Circuit Modeling of APDs
	%U https://publications.waset.org/pdf/5027
	%V 60
	%X In this paper a new method for increasing the speed of
SAGCM-APD is proposed. Utilizing carrier rate equations in
different regions of the structure, a circuit model for the structure is
obtained. In this research, in addition to frequency response, the
effect of added new charge layer on some transient parameters like
slew-rate, rising and falling times have been considered. Finally, by
trading-off among some physical parameters such as different layers
widths and droppings, a noticeable decrease in breakdown voltage
has been achieved. The results of simulation, illustrate some features
of proposed structure improvement in comparison with conventional
SAGCM-APD structures.
	%P 1799 - 1802