%0 Journal Article %A A. Ahadpour Shal and A. Ghadimi and A. Azadbar %D 2011 %J International Journal of Physical and Mathematical Sciences %B World Academy of Science, Engineering and Technology %I Open Science Index 60, 2011 %T Analysis and Circuit Modeling of APDs %U https://publications.waset.org/pdf/5027 %V 60 %X In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures. %P 1799 - 1802