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Analysis and Circuit Modeling of APDs

Authors: A. Ahadpour Shal, A. Ghadimi, A. Azadbar

Abstract:

In this paper a new method for increasing the speed of SAGCM-APD is proposed. Utilizing carrier rate equations in different regions of the structure, a circuit model for the structure is obtained. In this research, in addition to frequency response, the effect of added new charge layer on some transient parameters like slew-rate, rising and falling times have been considered. Finally, by trading-off among some physical parameters such as different layers widths and droppings, a noticeable decrease in breakdown voltage has been achieved. The results of simulation, illustrate some features of proposed structure improvement in comparison with conventional SAGCM-APD structures.

Keywords: breakdown voltage, Optical communication systems (OCS), Circuit modeling, SAGCM APD

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1060301

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