Search results for: Bipolar transistor

Authors: P.K. Sharma, B. Bhargava, S. Akashe

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Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in power dissipation. Increase in source voltage of NMOS transistor minimizes the leakage current. Thus stacking technique makes circuit with minimum power dissipation losses due to leakage current. Also some of digital circuits such as full adder, D flip flop and 6T SRAM have been simulated in this paper, with the application of reduction technique on ‘cadence virtuoso tool’ using specter at 45nm technology with supply voltage 0.7V.

Keywords: Stack, 6T SRAM cell, low power, threshold voltage

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device.

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Authors: Ankit Mitra

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An adder is one of the most integral component of a digital system like a digital signal processor or a microprocessor. Being an extremely computationally intensive part of a system, the optimization for speed and power consumption of the adder is of prime importance. In this paper we have designed a 1 bit full adder cell based on dynamic TSPC logic to achieve high speed operation. A high threshold voltage sleep transistor is used to reduce the static power dissipation in standby mode. The circuit is designed and simulated in TSPICE using TSMC 180nm CMOS process. Average power consumption, delay and power-delay product is measured which showed considerable improvement in performance over the existing full adder designs.

Keywords: CMOS, TSPC, MTCMOS, ALU, Clock gating, power gating, pipelining.

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Authors: Mohd. Hasan, Ajmal Kafeel, S. D. Pable

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Ultra-low-power (ULP) circuits have received widespread attention due to the rapid growth of biomedical applications and Battery-less Electronics. Subthreshold region of transistor operation is used in ULP circuits. Major research challenge in the subthreshold operating region is to extract the ULP benefits with minimal degradation in speed and robustness. Process, Voltage and Temperature (PVT) variations significantly affect the performance of subthreshold circuits. Designed performance parameters of ULP circuits may vary largely due to temperature variations. Hence, this paper investigates the effect of temperature variation on device and circuit performance parameters at different biasing voltages in the subthreshold region. Simulation results clearly demonstrate that in deep subthreshold and near threshold voltage regions, performance parameters are significantly affected whereas in moderate subthreshold region, subthreshold circuits are more immune to temperature variations. This establishes that moderate subthreshold region is ideal for temperature immune circuits.

Keywords: Subthreshold, temperature variations, ultralow power.

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Authors: Hema Sandhya Jagarlamudi, Mousumi Saha, Pavan Kumar Jagarlamudi

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The use of Quantum dots is a promising emerging Technology for implementing digital system at the nano level. It is effecient for attractive features such as faster speed , smaller size and low power consumption than transistor technology. In this paper, various Combinational and sequential logical structures - HALF ADDER, SR Latch and Flip-Flop, D Flip-Flop preceding NAND, NOR, XOR,XNOR are discussed based on QCA design, with comparatively less number of cells and area. By applying these layouts, the hardware requirements for a QCA design can be reduced. These structures are designed and simulated using QCA Designer Tool. By taking full advantage of the unique features of this technology, we are able to create complete circuits on a single layer of QCA. Such Devices are expected to function with ultra low power Consumption and very high speeds.

Keywords: QCA, QCA Designer, Clock, Majority Gate

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Authors: Hung-Pei Hsu, Jyi-Tsong Lin, Po-Hsieh Lin, Cheng-Hsien Chang, Ming-Tsung Shih, Chan-Hsiang Chang, Shih-Chuan Tseng, Min-Yan Lin, Shih-Wen Hsu

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In this paper, we propose a novel metal oxide semiconductor field effect transistor with L-shaped channel structure (LMOS), and several type of L-shaped structures are also designed, studied and compared with the conventional MOSFET device for the same average gate length (Lavg). The proposed device electrical characteristics are analyzed and evaluated by three dimension (3-D) ISE-TCAD simulator. It can be confirmed that the LMOS devices have higher on-state drain current and both lower drain-induced barrier lowering (DIBL) and subthreshold swing (S.S.) than its conventional counterpart has. In addition, the transconductance and voltage gain properties of the LMOS are also improved.

Keywords: Average gate length (Lavg), drain-induced barrier lowering (DIBL), L-shaped channel MOSFET (LMOS), subthreshold swing (S.S.).

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Authors: Jürgen Geiser, Robert Röhle

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In this paper we present modeling and simulation for physical vapor deposition for metallic bipolar plates. In the models we discuss the application of different models to simulate the transport of chemical reactions of the gas species in the gas chamber. The so called sputter process is an extremely sensitive process to deposit thin layers to metallic plates. We have taken into account lower order models to obtain first results with respect to the gas fluxes and the kinetics in the chamber. The model equations can be treated analytically in some circumstances and complicated multi-dimensional models are solved numerically with a software-package (UG unstructed grids, see [1]). Because of multi-scaling and multi-physical behavior of the models, we discuss adapted schemes to solve more accurate in the different domains and scales. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers.

Keywords: Convection-diffusion equations, multi-scale problem, physical vapor deposition, reaction equations, splitting methods.

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Authors: R .H. Talwekar, S. S Limaye

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The designing of charge pump with high gain Op- Amp is a challenging task for getting faithful response .Design of high performance phase locked loop require ,a design of high performance charge pump .We have designed a operational amplifier for reducing the error caused by high speed glitch in a transistor and mismatch currents . A separate Op-Amp has designed in 180 nm CMOS technology by CADENCE VIRTUOSO tool. This paper describes the design of high performance charge pump for GHz CMOS PLL targeting orthogonal frequency division multiplexing (OFDM) application. A high speed low power consumption Op-Amp with more than 500 MHz bandwidth has designed for increasing the speed of charge pump in Phase locked loop.

Keywords: Charge pump (CP) Orthogonal frequency divisionmultiplexing (OFDM), Phase locked loop (PLL), Phase frequencydetector (PFD), Voltage controlled oscillator (VCO),

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Authors: Rukaiya Suleiman Umar, Annah Kwadu Medugu

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Moringa oleifera is mainly used as herbal medicine in most homes in Northern Nigeria. The plant is easy to grow and thrives very well regardless the type of soil. Use of moringa leaves in food production can yield attractive varieties on menu. This paper evaluates the acceptability of dishes produced with fresh moringa leaves with a view to promoting it in popular restaurants. A three course menu consisting of cream of moringa soup as the starter, mixed meat moringa sauce with semovita as the main dish and moringa roll as sweet was produced and served to a 60-member taste panel made of three groups of 20 each. Respondents were asked to rate the organoleptic qualities of the samples on a 10-point bipolar scale ranging from 1 (Dislike extremely) – 10 (Like extremely). Data collected were treated to one sample t-test and One Way ANOVA. Results show that the panelists extremely like the moringa products. It is recommended that Moringa oleifera should be incorporated into meals which is more readily acceptable than medicine.

Keywords: Moringa oleifera, food production, menu planning, healthy living.

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Authors: Subal Kar, Madhuja Ghosh, Soumik Das, Antara Saha

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A novel technique has been developed to generate ultra-stable millimeter-wave signal by optical heterodyning of the output from two slave laser (SL) sources injection-locked to the sidebands of a frequency modulated (FM) master laser (ML). Precise thermal tuning of the SL sources is required to lock the particular slave laser frequency to the desired FM sidebands of the ML. The output signals from the injection-locked SL when coherently heterodyned in a fast response photo detector like high electron mobility transistor (HEMT), extremely stable millimeter-wave signal having very narrow line width can be generated. The scheme may also be used to generate ultra-stable sub-millimeter-wave/terahertz signal.

Keywords: FM sideband injection locking, Master-Slave injection locking, Millimetre-wave signal generation and Optical heterodyning.

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Authors: Ala'eddin A. Saif , Z. A. Z. Jamal, Z. Sauli, P. Poopalan

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The ferroelectric behavior of barium strontium titanate (BST) in thin film form has been investigated in order to study the possibility of using BST for ferroelectric gate-field effect transistor (FeFET) for memory devices application. BST thin films have been fabricated as Al/BST/Pt/SiO2/Si-gate configuration. The variation of the dielectric constant (ε) and tan δ with frequency have been studied to ensure the dielectric quality of the material. The results show that at low frequencies, ε increases as the Ba content increases, whereas at high frequencies, it shows the opposite variation, which is attributed to the dipole dynamics. tan δ shows low values with a peak at the mid-frequency range. The ferroelectric behavior of the Al/BST/Pt/SiO2/Si has been investigated using C-V characteristics. The results show that the strength of the ferroelectric hysteresis loop increases as the Ba content increases; this is attributed to the grain size and dipole dynamics effect.

Keywords: BST thin film, Electrical properties, Ferroelectrichysteresis, Ferroelectric FET.

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Authors: Houda Bdiri Gabbouj, Néjib Hassen, Kamel Besbes

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This paper presents a low-voltage low-power differential linear transconductor with near rail-to-rail input swing. Based on the current-mirror OTA topology, the proposed transconductor combines the Flipped Voltage Follower (FVF) technique to linearize the transconductor behavior that leads to class- AB linear operation and the virtual transistor technique to lower the effective threshold voltages of the transistors which offers an advantage in terms of low supply requirement. Design of the OTA has been discussed. It operates at supply voltages of about ±0.8V. Simulation results for 0.18μm TSMC CMOS technology show a good input range of 1Vpp with a high DC gain of 81.53dB and a total harmonic distortion of -40dB at 1MHz for an input of 1Vpp. The main aim of this paper is to present and compare new OTA design with high transconductance, which has a potential to be used in low voltage applications.

Keywords: Amplifier class AB, current mirror, flipped voltage follower, low voltage.

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: Low-frequency noise, Random Telegraph Noise, Dynamic Variation, SRRV.

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

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Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: Fast vs slow BTI, Fast wafer level reliability, Negative bias temperature instability, NBTI measurement system, metal-oxide-semiconductor field-effect transistor, MOSFET, NBTI recovery, reliability.

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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Authors: Montree Kumngern, Kobchai Dejhan

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Versatile dual-mode class-AB CMOS four-quadrant analog multiplier circuit is presented. The dual translinear loops and current mirrors are the basic building blocks in realization scheme. This technique provides; wide dynamic range, wide-bandwidth response and low power consumption. The major advantages of this approach are; its has single ended inputs; since its input is dual translinear loop operate in class-AB mode which make this multiplier configuration interesting for low-power applications; current multiplying, voltage multiplying, or current and voltage multiplying can be obtainable with balanced input. The simulation results of versatile analog multiplier demonstrate a linearity error of 1.2 %, a -3dB bandwidth of about 19MHz, a maximum power consumption of 0.46mW, and temperature compensated. Operation of versatile analog multiplier was also confirmed through an experiment using CMOS transistor array.

Keywords: Class-AB, dual-mode CMOS analog multiplier, CMOS analog integrated circuit, CMOS translinear integrated circuit.

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Authors: V. S. Klimash, Ye Min Thu

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Thyristor rectifiers, inverters grid-tied, and AC voltage regulators are widely used in industry, and on electrified transport, they have a lot in common both in the power circuit and in the control system. They have a common mathematical structure and switching processes. At the same time, the rectifier, but the inverter units and thyristor regulators of alternating voltage are considered separately both theoretically and practically. They are written about in different books as completely different devices. The aim of this work is to combine them into one class based on the unity of the equations describing electromagnetic processes, and then, to show this unity on the mathematical model and experimental setup. Based on research from mathematics to the product, a conclusion is made about the methodology for the rapid conduct of research and experimental design work, preparation for production and serial production of converters with a unified bundle. In recent years, there has been a transition from thyristor circuits and transistor in modular design. Showing the example of thyristor rectifiers and AC voltage regulators, we can conclude that there is a unity of mathematical structures and grid-tied thyristor converters.

Keywords: Direct current, alternating current, rectifier, AC voltage regulator, generalized mathematical model.

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Authors: Fasil Endalamaw

Abstract:

Digital magnitude comparators based on Gate Diffusion Input (GDI) implementation technique are high speed and area-efficient, and they consume less power as compared to other implementation techniques. However, they are less efficient for some logic gates and have no full voltage swing. In this paper, we made a performance comparison between the GDI implementation technique and other implementation methods, such as Static CMOS, Pass Transistor Logic (PTL), and Transmission Gate (TG) in 90 nm, 120 nm, and 180 nm CMOS technologies using BSIM4 MOS model. We proposed a methodology (hybrid implementation) of implementing digital magnitude comparators which significantly improved the power, speed, area, and voltage swing requirements. Simulation results revealed that the hybrid implementation of digital magnitude comparators show a 10.84% (power dissipation), 41.6% (propagation delay), 47.95% (power-delay product (PDP)) improvement compared to the usual GDI implementation method. We used Microwind & Dsch Version 3.5 as well as the Tanner EDA 16.0 tools for simulation purposes.

Keywords: Efficient, gate diffusion input, high speed, low power, CMOS.

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Authors: Arash Azizi Mazreah, Mohammad T. Manzuri Shalmani, Hamid Barati, Ali Barati, Ali Sarchami

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This paper proposes a low power SRAM based on five transistor SRAM cell. Proposed SRAM uses novel word-line decoding such that, during read/write operation, only selected cell connected to bit-line whereas, in conventional SRAM (CV-SRAM), all cells in selected row connected to their bit-lines, which in turn develops differential voltages across all bit-lines, and this makes energy consumption on unselected bit-lines. In proposed SRAM memory array divided into two halves and this causes data-line capacitance to reduce. Also proposed SRAM uses one bit-line and thus has lower bit-line leakage compared to CV-SRAM. Furthermore, the proposed SRAM incurs no area overhead, and has comparable read/write performance versus the CV-SRAM. Simulation results in standard 0.25μm CMOS technology shows in worst case proposed SRAM has 80% smaller dynamic energy consumption in each cycle compared to CV-SRAM. Besides, energy consumption in each cycle of proposed SRAM and CV-SRAM investigated analytically, the results of which are in good agreement with the simulation results.

Keywords: SRAM, write Operation, read Operation, capacitances, dynamic energy consumption.

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Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

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In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, triple gate, and gate all around nano wires were studied to investigate the impact of increasing the number of gates on the control of the short channel effect which is important in nanoscale devices. Also in the case of triple gate rectangular SNWT inserting extra gates on the bottom of device can improve the application of device. The results indicate that by using gate all around structures short channel effects such as DIBL, subthreshold swing and delay reduces.

Keywords: SNWT (silicon nanowire transistor), non equilibriumGreen's function (NEGF), double gate (DG), triple gate (TG), multiple gate, cylindrical nano wire (CW), rectangular nano wire(RW), Poisson_ Schrödinger solver, drain induced barrier lowering(DIBL).

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Authors: K. A. Sumitra Devi, N. P. Banashree, Annamma Abraham

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Partitioning is a critical area of VLSI CAD. In order to build complex digital logic circuits its often essential to sub-divide multi -million transistor design into manageable Pieces. This paper looks at the various partitioning techniques aspects of VLSI CAD, targeted at various applications. We proposed an evolutionary time-series model and a statistical glitch prediction system using a neural network with selection of global feature by making use of clustering method model, for partitioning a circuit. For evolutionary time-series model, we made use of genetic, memetic & neuro-memetic techniques. Our work focused in use of clustering methods - K-means & EM methodology. A comparative study is provided for all techniques to solve the problem of circuit partitioning pertaining to VLSI design. The performance of all approaches is compared using benchmark data provided by MCNC standard cell placement benchmark net lists. Analysis of the investigational results proved that the Neuro-memetic model achieves greater performance then other model in recognizing sub-circuits with minimum amount of interconnections between them.

Keywords: VLSI, circuit partitioning, memetic algorithm, genetic algorithm.

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Authors: Syed Iftekhar Ali, M. S. Islam

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In this paper we present an energy efficient match-line (ML) sensing scheme for high-speed ternary content-addressable memory (TCAM). The proposed scheme isolates the sensing unit of the sense amplifier from the large and variable ML capacitance. It employs feedback in the sense amplifier to successfully detect a match while keeping the ML voltage swing low. This reduced voltage swing results in large energy saving. Simulation performed using 130nm 1.2V CMOS logic shows at least 30% total energy saving in our scheme compared to popular current race (CR) scheme for similar search speed. In terms of speed, dynamic energy, peak power consumption and transistor count our scheme also shows better performance than mismatch-dependant (MD) power allocation technique which also employs feedback in the sense amplifier. Additionally, the implementation of our scheme is simpler than CR or MD scheme because of absence of analog control voltage and programmable delay circuit as have been used in those schemes.

Keywords: content-addressable memory, energy consumption, feedback, peak power, sensing scheme, sense amplifier, ternary.

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Authors: A. Leelasantitham, B. Srisuchinwong

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A high-frequency low-power sinusoidal quadrature oscillator is presented through the use of two 2nd-order low-pass current-mirror (CM)-based filters, a 1st-order CM low-pass filter and a CM bilinear transfer function. The technique is relatively simple based on (i) inherent time constants of current mirrors, i.e. the internal capacitances and the transconductance of a diode-connected NMOS, (ii) a simple negative resistance RN formed by a resistor load RL of a current mirror. Neither external capacitances nor inductances are required. As a particular example, a 1.9-GHz, 0.45-mW, 2-V CMOS low-pass-filter-based all-current-mirror sinusoidal quadrature oscillator is demonstrated. The oscillation frequency (f0) is 1.9 GHz and is current-tunable over a range of 370 MHz or 21.6 %. The power consumption is at approximately 0.45 mW. The amplitude matching and the quadrature phase matching are better than 0.05 dB and 0.15°, respectively. Total harmonic distortions (THD) are less than 0.3 %. At 2 MHz offset from the 1.9 GHz, the carrier to noise ratio (CNR) is 90.01 dBc/Hz whilst the figure of merit called a normalized carrier-to-noise ratio (CNRnorm) is 153.03 dBc/Hz. The ratio of the oscillation frequency (f0) to the unity-gain frequency (fT) of a transistor is 0.25. Comparisons to other approaches are also included.

Keywords: Sinusoidal quadrature oscillator, low-pass-filterbased, current-mirror bilinear transfer function, all-current-mirror, negative resistance, low power, high frequency, low distortion.

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Authors: Muhibul H. Bhuyan, Mafujul Hasan

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If a person can monitor his/her heart rate regularly then he/she can detect heart disease early and thus he/she can enjoy longer life span. Therefore, this disease should be taken seriously. Hence, many health care devices and monitoring systems are being designed to keep track of the heart disease. This work reports a design and simulation processes of an Arduino microcontroller based heart rate measurement and monitoring system in Proteus environment. Clipping sensors were utilized to sense the heart rate of an individual from the finger tips. It is a digital device and uses mainly infrared (IR) transmitter (mainly IR LED) and receiver (mainly IR photo-transistor or IR photo-detector). When the heart pumps the blood and circulates it among the blood vessels of the body, the changed blood pressure is detected by the transmitter and then reflected back to the receiver accordingly. The reflected signals are then processed inside the microcontroller through a software written assembly language and appropriate heart rate (HR) is determined by it in beats per minute (bpm) from the detected signal for a duration of 10 seconds and display the same in bpm on the LCD screen in digital format. The designed system was simulated on several persons with varying ages, for example, infants, adult persons and active athletes. Simulation results were found very satisfactory.

Keywords: Heart rate measurement, design, simulation, Proteus, Arduino Uno microcontroller.

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Authors: Aqsa Ali, Aleem Mushtaq, Attaullah Memon, Monna

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In this paper, we present a low cost design for a smart glove that can perform sign language recognition to assist the speech impaired people. Specifically, we have designed and developed an Assistive Hand Gesture Interpreter that recognizes hand movements relevant to the American Sign Language (ASL) and translates them into text for display on a Thin-Film-Transistor Liquid Crystal Display (TFT LCD) screen as well as synthetic speech. Linear Bayes Classifiers and Multilayer Neural Networks have been used to classify 11 feature vectors obtained from the sensors on the glove into one of the 27 ASL alphabets and a predefined gesture for space. Three types of features are used; bending using six bend sensors, orientation in three dimensions using accelerometers and contacts at vital points using contact sensors. To gauge the performance of the presented design, the training database was prepared using five volunteers. The accuracy of the current version on the prepared dataset was found to be up to 99.3% for target user. The solution combines electronics, e-textile technology, sensor technology, embedded system and machine learning techniques to build a low cost wearable glove that is scrupulous, elegant and portable.

Keywords: American sign language, assistive hand gesture interpreter, human-machine interface, machine learning, sensing glove.

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Authors: Kay-Anne Haykal, Issack Biyong

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The post-traumatic stress disorder (PTSD) rises from exposure to a traumatic event and appears by a persistent experience of this event. Several psychiatric co-morbidities are associated with PTSD and include mood disorders, anxiety disorders, and substance abuse. The main objective was to compare the criteria for PTSD according to the literature to those used to diagnose a patient in a francophone hospital and to check the correspondence of these two criteria. 700 medical charts of admitted patients on the medicine or psychiatric unit at the Montfort Hospital were identified with the following diagnoses: major depressive disorder, bipolar disorder, anxiety disorder, substance abuse, and PTSD for the period of time between April 2005 and March 2006. Multiple demographic criteria were assembled. Also, for every chart analyzed, the PTSD criteria, according to the Manual of Mental Disorders (DSM) IV were found, identified, and grouped according to pre-established codes. An analysis using the receiver operating characteristic (ROC) method was elaborated for the study of data. A sample of 57 women and 50 men was studied. Age was varying between 18 and 88 years with a median age of 48. According to the PTSD criteria in the DSM IV, 12 patients should have the diagnosis of PTSD in opposition to only two identified in the medical charts. The ROC method establishes that with the combination of data from PTSD and depression, the sensitivity varies between 0,127 and 0,282, and the specificity varies between 0,889 and 0,917. Otherwise, if we examine the PTSD data alone, the sensibility jumps to 0.50, and the specificity varies between 0,781 and 0,895. This study confirms the presence of an underdiagnosed and treated PTSD that causes severe perturbations for the affected individual.

Keywords: Post-Traumatic Stress Disorder, diagnosis, co-morbidities, mental health disorders.

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Authors: Mehdi Hosseinzadeh, Somayyeh Jafarali Jassbi, Keivan Navi

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Residue Number System (RNS) is a modular representation and is proved to be an instrumental tool in many digital signal processing (DSP) applications which require high-speed computations. RNS is an integer and non weighted number system; it can support parallel, carry-free, high-speed and low power arithmetic. A very interesting correspondence exists between the concepts of Multiple Valued Logic (MVL) and Residue Number Arithmetic. If the number of levels used to represent MVL signals is chosen to be consistent with the moduli which create the finite rings in the RNS, MVL becomes a very natural representation for the RNS. There are two concerns related to the application of this Number System: reaching the most possible speed and the largest dynamic range. There is a conflict when one wants to resolve both these problem. That is augmenting the dynamic range results in reducing the speed in the same time. For achieving the most performance a method is considere named “One-Hot Residue Number System" in this implementation the propagation is only equal to one transistor delay. The problem with this method is the huge increase in the number of transistors they are increased in order m² . In real application this is practically impossible. In this paper combining the Multiple Valued Logic and One-Hot Residue Number System we represent a new method to resolve both of these two problems. In this paper we represent a novel design of an OHRNS-based adder circuit. This circuit is useable for Multiple Valued Logic moduli, in comparison to other RNS design; this circuit has considerably improved the number of transistors and power consumption.

Keywords: Computer Arithmetic, Residue Number System, Multiple Valued Logic, One-Hot, VLSI.

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Authors: Takeshi Sato, Mizuki Nakajima, Macky Kato, Shoji Igawa

Abstract:

The purpose of study was to investigate the effect of varying pole weights on energy expenditure, upper limb and lower limb muscle activity as Electromyogram during Nordic walking (NW). Four healthy men [age = 22.5 (±1.0) years, body mass = 61.4 (±3.6) kg, height = 170.3 (±4.3) cm] and three healthy women [age = 22.7 (±2.9) years, body mass = 53.0 (±1.7) kg, height = 156.7 (±4.5) cm] participated in the experiments after informed consent. Seven healthy subjects were tested on the treadmill, walking, walking (W) with Nordic Poles (NW) and walking with 1kg weight Nordic Poles (NW+1). Walking speed was 6 km per hours in all trials. Eight EMG activities were recorded by bipolar surface methods in biceps brachii, triceps brachii, trapezius, deltoideus, tibialis anterior, medial gastrocnemius, rectus femoris and biceps femoris muscles. And heart rate (HR), oxygen uptake (VO₂), and rate of perceived exertion (RPE) were measured. The level of significance was set at a = 0.05, with p < 0.05 regarded as statistically significant. Our results confirmed that use of NW poles increased HR at a given upper arm muscle activity but decreased lower limb EMGs in comparison with W. Moreover NW was able to increase more step lengths with hip joint extension during NW rather than W. Also, EMG revealed higher activation of upper limb for almost all NW and 1kgNW tests plus added masses compared to W (p < 0.05). Therefore, it was thought either of NW and 1kgNW were to have benefit as a physical exercise for safe, feasible, and readily training for a wide range of aged people in the quality of daily life. However, there was no significant effected in leg muscles activity by using 1kgNW except for upper arm muscle activity during Nordic pole walking.

Keywords: Nordic walking, electromyogram, heart rate.

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Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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Authors: Rui Qiu, Giles Hardy, Dong Qu, Robert Trengove, Manjree Agarwal, YongLin Ren

Abstract:

Phytophthora cinnamomi (P. c) is a plant pathogenic oomycete that is capable of damaging plants in commercial production systems and natural ecosystems worldwide. The most common methods for the detection and diagnosis of P. c infection are expensive, elaborate and time consuming. This study was carried out to examine whether species specific and life cycle specific volatile organic compounds (VOCs) can be absorbed by solid-phase microextraction fibers and detected by gas chromatography that are produced by P. c and another oomycete Pythium dissotocum. A headspace solid-phase microextraction (HS-SPME) together with gas chromatography (GC) method was developed and optimized for the identification of the VOCs released by P. c. The optimized parameters included type of fiber, exposure time, desorption temperature and desorption time. Optimization was achieved with the analytes of P. c+V8A and V8A alone. To perform the HS-SPME, six types of fiber were assayed and compared: 7μm Polydimethylsiloxane (PDMS), 100μm Polydimethylsiloxane (PDMS), 50/30μm Divinylbenzene/CarboxenTM/Polydimethylsiloxane DVB/CAR/PDMS), 65μm Polydimethylsiloxane/Divinylbenzene (PDMS/DVB), 85μm Polyacrylate (PA) fibre and 85μm CarboxenTM/ Polydimethylsiloxane (Carboxen™/PDMS). In a comparison of the efficacy of the fibers, the bipolar fiber DVB/CAR/PDMS had a higher extraction efficiency than the other fibers. An exposure time of 16h with DVB/CAR/PDMS fiber in the sample headspace was enough to reach the maximum extraction efficiency. A desorption time of 3min in the GC injector with the desorption temperature of 250°C was enough for the fiber to desorb the compounds of interest. The chromatograms and morphology study confirmed that the VOCs from P. c+V8A had distinct differences from V8A alone, as did different life cycle stages of P. c and different taxa such as Pythium dissotocum. The study proved that P. c has species and life cycle specific VOCs, which in turn demonstrated the feasibility of this method as means of

Keywords: Gas chromatography, headspace solid-phase microextraction, optimization, volatile compounds.

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