Search results for: Silicon composite insulators
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 907

Search results for: Silicon composite insulators

877 Modeling of Steady State Creep in Thick-Walled Cylinders under Internal Pressure

Authors: Tejeet Singh, Ishavneet Singh

Abstract:

The present study focused on carrying out the creep analysis in an isotropic thick-walled composite cylindrical pressure vessel composed of aluminum matrix reinforced with silicon-carbide in particulate form. The creep behavior of the composite material has been described by the threshold stress based creep law. The values of stress exponent appearing in the creep law were selected as 3, 5 and 8. The constitutive equations were developed using well known von-Mises yield criteria. Models were developed to find out the distributions of creep stress and strain rate in thick-walled composite cylindrical pressure vessels under internal pressure. In order to obtain the stress distributions in the cylinder, the equilibrium equation of the continuum mechanics and the constitutive equations are solved together. It was observed that the radial stress, tangential stress and axial stress increases along with the radial distance. The cross-over was also obtained almost at the middle region of cylindrical vessel for tangential and axial stress for different values of stress exponent. The strain rates were also decreasing in nature along the entire radius.

Keywords: Steady state creep, composite, cylinder, pressure.

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876 Effect of CW Laser Annealing on Silicon Surface for Application of Power Device

Authors: Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

Abstract:

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.

Keywords: laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.

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875 High Temperature Hydrogen Sensors Based On Pd/Ta2O5/SiC MOS Capacitor

Authors: J. H. Choi, S. J. Kim, M. S. Jung, S. J. Kim, S. J. Joo, S. C. Kim

Abstract:

There are a many of needs for the development of SiC-based hydrogen sensor for harsh environment applications. We fabricated and investigated Pd/Ta2O5/SiC-based hydrogen sensors with MOS capacitor structure for high temperature process monitoring and leak detection applications in such automotive, chemical and petroleum industries as well as direct monitoring of combustion processes. In this work, we used silicon carbide (SiC) as a substrate to replace silicon which operating temperatures are limited to below 200°C. Tantalum oxide was investigated as dielectric layer which has high permeability for hydrogen gas and high dielectric permittivity, compared with silicon dioxide or silicon nitride. Then, electrical response properties, such as I-V curve and dependence of capacitance on hydrogen concentrations were analyzed in the temperature ranges of room temperature to 500°C for performance evaluation of the sensor.

Keywords: High temperature, hydrogen sensor, SiC, Ta2O5 dielectric layer.

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874 Silicon Application and Nitrogen on Yield and Yield Components in Rice (Oryza sativa L.) in Two Irrigation Systems

Authors: Abbas Ghanbari-Malidareh

Abstract:

Silicon is a beneficial element for plant growth. It helps plants to overcome multiple stresses, alleviates metal toxicity and improves nutrient imbalance. Field experiment was conducted as split-split plot arranged in a randomized complete block design with four replications. Irrigation system include continues flooding and deficit as main plots and nitrogen rates N0, N46, N92, and N138 kg/ha as sub plots and silicon rates Si0 & Si500 kg/ha as sub-subplots. Results indicate that grain yield had not significant difference between irrigation systems. Flooding irrigation had higher biological yield than deficit irrigation whereas, no significant difference in grain and straw yield. Nitrogen application increased grain, biological and straw yield. Silicon application increased grain, biological and straw yield but, decreased harvest index. Flooding irrigation had higher number of total tillers / hill than deficit irrigation, but deficit irrigation had higher number of fertile tillers / hill than flooding irrigation. Silicon increased number of filled spikelet and decreased blank spikelet. With high nitrogen application decreased 1000-grain weight. It can be concluded that if the nitrogen application was high and water supplied was available we could have silicon application until increase grain yield.

Keywords: Grain yield, Irrigation, Nitrogen, Rice, Silicon.

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873 Nanoindentation Behaviour and Microstructural Evolution of Annealed Single-Crystal Silicon

Authors: Woei-Shyan Lee, Shuo-Ling Chang

Abstract:

The nanoindentation behaviour and phase transformation of annealed single-crystal silicon wafers are examined. The silicon specimens are annealed at temperatures of 250, 350 and 450ºC, respectively, for 15 minutes and are then indented to maximum loads of 30, 50 and 70 mN. The phase changes induced in the indented specimens are observed using transmission electron microscopy (TEM) and micro-Raman scattering spectroscopy (RSS). For all annealing temperatures, an elbow feature is observed in the unloading curve following indentation to a maximum load of 30 mN. Under higher loads of 50 mN and 70 mN, respectively, the elbow feature is replaced by a pop-out event. The elbow feature reveals a complete amorphous phase transformation within the indented zone, whereas the pop-out event indicates the formation of Si XII and Si III phases. The experimental results show that the formation of these crystalline silicon phases increases with an increasing annealing temperature and indentation load. The hardness and Young’s modulus both decrease as the annealing temperature and indentation load are increased.

Keywords: Nanoindentation, silicon, phase transformation, amorphous, annealing.

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872 Exploiting Silicon-on-Insulator Microring Resonator Bistability Behavior for All Optical Set-Reset Flip-Flop

Authors: P. Nadimi, D. D. Caviglia, E. Di Zitti

Abstract:

We propose an all optical flip-flop circuit composedof two Silicon-on-insulator microring resonators coupled to straightwaveguides by exploiting the optical bistability behavior due to thenonlinear Kerr effect. We used the transfer matrix analysis toinvestigate continuous wave propagation through microrings, as wellwe considered the nonlinear switching characteristics of an opticaldevice using a double-coupler silicon ring resonator in presence ofthe Kerr nonlinearity, thus obtaining the bistability behavior of theoutput port, the drop port and also inside the silicon microringresonator. It is shown that the bistability behavior depends on thecontrol of the input wavelength.KeywordsAll optical flip-flops, Kerr effect, microringresonator, optical bistability.

Keywords: All optical flip-flops, Kerr effect, microring resonator, optical bistability.

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871 The Effect of Silicon on Cadmium Stress in Echium amoenum

Authors: Janet Amiri, Shekoofeh Entesari, Kourosh Delavar, Mahshid Saadatmand, Nasrin Aghamohammad Rafie

Abstract:

The beneficial effects of Si are mainly associated with its high deposition in plant tissue and enhancing their strength and rigidity. We investigated the role of Si against cadmium stress in (Echium C) in house green condition. When the seventh leaves was be appeared, plants were pretreated with five levels of Si: 0, 0.2, 0.5, 0.7and 1.5 mM Si (as sodium trisilicate, Na2(SiO2)3) and after that plants were treated with two levels of Cd (30 and 90 mM). The effects of Silicon and Cd were investigated on some physiological and biochemical parameters such as: lipid peroxidation (malondialdehyde (MDA) and other aldehydes, antocyanin and flavonoid content. Our results showed that Cd significantly increased MDA, other aldehydes, antocyanin and flavonoids content in Echium and silicon offset the negative effect and increased tolerance of Echium against Cd stress. From this results we concluded that Si increase membrane integrity and antioxidative ability in this plant against cd stress.

Keywords: Silicon, Cadmium, Echium, MDA, antocyanin, flavonoid

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870 Thermal Resistance Analysis of Flexible Composites Based on Al2O3 Aerogels

Authors: Jianzheng Wei, Duo Zhen, Zhihan Yang, Huifeng Tan

Abstract:

The deployable descent technology is a lightweight entry method using an inflatable heat shield. The heatshield consists of a pressurized core which is covered by different layers of thermal insulation and flexible ablative materials in order to protect against the thermal loads. In this paper, both aluminum and silicon-aluminum aerogels were prepared by freeze-drying method. The latter material has bigger specific surface area and nano-scale pores. Mullite fibers are used as the reinforcing fibers to prepare the aerogel matrix to improve composite flexibility. The flexible composite materials were performed as an insulation layer to an underlying aramid fabric by a thermal shock test at a heat flux density of 120 kW/m2 and uniaxial tensile test. These results show that the aramid fabric with untreated mullite fibers as the thermal protective layer is completely carbonized at the heat of about 60 s. The aramid fabric as a thermal resistance layer of the composite material still has good mechanical properties at the same heat condition.

Keywords: Aerogel, aramid fabric, flexibility, thermal resistance.

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869 Dextran Modified Silicon Photonic Microring Resonator Sensors

Authors: Jessie Yiying Quah, Vivian Netto, Jack Sheng Kee, Eric Mouchel La Fosse, Mi Kyoung Park

Abstract:

We present a dextran modified silicon microring resonator sensor for high density antibody immobilization. An array of sensors consisting of three sensor rings and a reference ring was fabricated and its surface sensitivity and the limit of detection were obtained using polyelectrolyte multilayers. The mass sensitivity and the limit of detection of the fabricated sensor ring are 0.35 nm/ng mm-2 and 42.8 pg/mm2 in air, respectively. Dextran modified sensor surface was successfully prepared by covalent grafting of oxidized dextran on 3-aminopropyltriethoxysilane (APTES) modified silicon sensor surface. The antibody immobilization on hydrogel dextran matrix improves 40% compared to traditional antibody immobilization method via APTES and glutaraldehyde linkage.

Keywords: Antibody immobilization, Dextran, Immunosensor, Label-free detection, Silicon micro-ring resonator

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868 Silicon-To-Silicon Anodic Bonding via Intermediate Borosilicate Layer for Passive Flow Control Valves

Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

Abstract:

Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: Anodic bonding, evaporated glass, microfluidic valve, drug delivery.

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867 Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor

Authors: Fatemeh Karimi, Morteza Fathipour, Hamdam Ghanatian, Vala Fathipour

Abstract:

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure.

Keywords: SNWT (silicon nanowire transistor), Tensile Strain, high-κ dielectric, Field Induced Barrier Lowering (FIBL), cylindricalnano wire (CW), drain induced barrier lowering (DIBL).

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866 Light Emission Enhancement of Silicon Nanocrystals by Gold Layer

Authors: R. Karmouch

Abstract:

A thin gold metal layer was deposited on the top of silicon oxide films containing embedded Si nanocrystals (Si-nc). The sample was annealed in a gas containing nitrogen, and subsequently characterized by photoluminescence. We obtained 3-fold enhancement of photon emission from the Si-nc embedded in silicon dioxide covered with a Gold layer as compared with an uncovered sample. We attribute this enhancement to the increase of the spontaneous emission rate caused by the coupling of the Si-nc emitters with the surface plasmons (SP). The evolution of PL emission with laser irradiated time was also collected from covered samples, and compared to that from uncovered samples. In an uncovered sample, the PL intensity decreases with time, approximately with two decay constants. Although the decrease of the initial PL intensity associated with the increase of sample temperature under CW pumping is still observed in samples covered with a gold layer, this film significantly contributes to reduce the permanent deterioration of the PL intensity. The resistance to degradation of light-emitting silicon nanocrystals can be increased by SP coupling to suppress the permanent deterioration. Controlling the permanent photodeterioration can allow to perform a reliable optical gain measurement.

Keywords: Photodeterioration, Silicon Nanocrystals, Ion Implantation, Photoluminescence, Surface Plasmons.

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865 Characterization of Aluminium Alloy 6063 Hybrid Metal Matrix Composite by Using Stir Casting Method

Authors: Balwinder Singh

Abstract:

The present research is a paper on the characterization of aluminum alloy-6063 hybrid metal matrix composites using three different reinforcement materials (SiC, red mud, and fly ash) through stir casting method. The red mud was used in solid form, and particle size range varies between 103-150 µm. During this investigation, fly ash is received from Guru Nanak Dev Thermal Plant (GNDTP), Bathinda. The study has been done by using Taguchi’s L9 orthogonal array by taking fraction wt.% (SiC 5%, 7.5%, and 10% and Red Mud and Fly Ash 2%, 4%, and 6%) as input parameters with their respective levels. The study of the mechanical properties (tensile strength, impact strength, and microhardness) has been done by using Analysis of Variance (ANOVA) with the help of MINITAB 17 software. It is revealed that silicon carbide is the most significant parameter followed by red mud and fly ash affecting the mechanical properties, respectively. The fractured surface morphology of the composites using Field Emission Scanning Electron Microscope (FESEM) shows that there is a good mixing of reinforcement particles in the matrix. Energy-dispersive X-ray spectroscopy (EDS) was performed to know the presence of the phases of the reinforced material.

Keywords: Reinforcement, silicon carbide, fly ash, red mud.

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864 Sintering of Composite Ceramic based on Corundum with Additive in the Al2O3-TiO2-MnO System

Authors: Aung Kyaw Moe, Lukin Evgeny Stepanovich, Popova Nelya Alexandrovna

Abstract:

In this paper, the effect of the additive content in the Al2O3-TiO2-MnO system on the sintering of composite ceramics based on corundum was studied. The samples were pressed by uniaxial semi-dry pressing under 100 MPa and sintered at 1500 °С and 1550 °С. The properties of composite ceramics for porosity and flexural strength were studied. When the amount of additives increases, the properties of composite ceramic samples are better than samples without additives.

Keywords: Ceramic, composite material, sintering, corundum.

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863 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: Epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors.

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862 Mechanical Properties of 3D Noninterlaced Cf/SiC Composites Prepared through Hybrid Process (CVI+PIP)

Authors: A. Udayakumar, M. Rizvan Basha, M. Stalin, V.V Bhanu Prasad

Abstract:

Three dimensional non-Interlaced carbon fibre reinforced silicon carbide (3-D-Cf/SiC) composites with pyrocarbon interphase were fabricated using isothermal chemical vapor infiltration (ICVI) combined with polymer impregnation pyrolysis (PIP) process. Polysilazane (PSZ) is used as a preceramic polymer to obtain silicon carbide matrix. Thermo gravimetric analysis (TGA), Infrared spectroscopic analysis (IR) and X-ray diffraction (XRD) analysis were carried out on PSZ pyrolysed at different temperatures to understand the pyrolysis and obtaining the optimum pyrolysing condition to yield β-SiC phase. The density of the composites was 1.94 g cm-3 after the 3-D carbon preform was SiC infiltrated for 280 h with one intermediate polysilazane pre-ceramic PIP process. Mechanical properties of the composite materials were investigated under tensile, flexural, shear and impact loading. The values of tensile strength were 200 MPa at room temperature (RT) and 195 MPa at 500°C in air. The average RT flexural strength was 243 MPa. The lower flexural strength of these composites is because of the porosity. The fracture toughness obtained from single edge notched beam (SENB) technique was 39 MPa.m1/2. The work of fracture obtained from the load-displacement curve of SENB test was 22.8 kJ.m-2. The composites exhibited excellent impact resistance and the dynamic fracture toughness of 44.8 kJ.m-2 is achieved as determined from instrumented Charpy impact test. The shear strength of the composite was 93 MPa, which is significantly higher compared 2-D Cf/SiC composites. Microstructure evaluation of fracture surfaces revealed the signatures of fracture processes and showed good support for the higher toughness obtained.

Keywords: 3-D-Cf/SiC, charpy impact test, composites, dynamic fracture toughness, polysilazane, pyrocarbon, Interphase.

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861 Non-Circular Carbon Fiber Reinforced Polymers Chainring Failure Analysis

Authors: A. Elmikaty, Z. Thanawarothon, L. Mezeix

Abstract:

This paper presents a finite element model to simulate the teeth failure of non-circular composite chainring. Model consists of the chainring and a part of the chain. To reduce the size of the model, only the first 11 rollers are simulated. In order to validate the model, it is firstly applied to a circular aluminum chainring and evolution of the stress in the teeth is compared with the literature. Then, effect of the non-circular shape is studied through three different loading positions. Strength of non-circular composite chainring and failure scenario is investigated. Moreover, two composite lay-ups are proposed to observe the influence of the stacking. Results show that composite material can be used but the lay-up has a large influence on the strength. Finally, loading position does not have influence on the first composite failure that always occurs in the first tooth.

Keywords: CFRP, composite failure, FEA, non-circular chainring.

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860 Impact of Process Variations on the Vertical Silicon Nanowire Tunneling FET (TFET)

Authors: Z. X. Chen, T. S. Phua, X. P. Wang, G. -Q. Lo, D. -L. Kwong

Abstract:

This paper presents device simulations on the vertical silicon nanowire tunneling FET (VSiNW TFET). Simulations show that a narrow nanowire and thin gate oxide is required for good performance, which is expected even for conventional MOSFETs. The gate length also needs to be more than the nanowire diameter to prevent short channel effects. An effect more unique to TFET is the need for abrupt source to channel junction, which is shown to improve the performance. The ambipolar effect suppression by reducing drain doping concentration is also explored and shown to have little or no effect on performance.

Keywords: Device simulation, MEDICI, tunneling FET (TFET), vertical silicon nanowire.

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859 CMOS-Compatible Silicon Nanoplasmonics for On-Chip Integration

Authors: Shiyang Zhu, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

Although silicon photonic devices provide a significantly larger bandwidth and dissipate a substantially less power than the electronic devices, they suffer from a large size due to the fundamental diffraction limit and the weak optical response of Si. A potential solution is to exploit Si plasmonics, which may not only miniaturize the photonic device far beyond the diffraction limit, but also enhance the optical response in Si due to the electromagnetic field confinement. In this paper, we discuss and summarize the recently developed metal-insulator-Si-insulator-metal nanoplasmonic waveguide as well as various passive and active plasmonic components based on this waveguide, including coupler, bend, power splitter, ring resonator, MZI, modulator, detector, etc. All these plasmonic components are CMOS compatible and could be integrated with electronic and conventional dielectric photonic devices on the same SOI chip. More potential plasmonic devices as well as plasmonic nanocircuits with complex functionalities are also addressed.

Keywords: Silicon nanoplasmonics, Silicon nanophotonics, Onchip integration, CMOS

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858 Nano-Texturing of Single Crystalline Silicon via Cu-Catalyzed Chemical Etching

Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker

Abstract:

We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO3)2/HF/H2O2/H2O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.

Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells.

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857 Numerical Modelling of Surface Waves Generated by Low Frequency Electromagnetic Field for Silicon Refinement Process

Authors: V. Geza, J. Vencels, G. Zageris, S. Pavlovs

Abstract:

One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt’s surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

Keywords: Numerical modelling, silicon refinement, surface waves, VOF method.

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856 Optimization of Thermopile Sensor Performance of Polycrystalline Silicon Film

Authors: Li Long, Thomas Ortlepp

Abstract:

A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor and sensor layout shape factor. Based on the properties of electrons, phonons, grain boundaries and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of Boltzmann transport equation. The model includes the effects of grain structure, grain boundary trap properties and doping concentration. The layer structure factor of sensor is analyzed with respect to infrared absorption coefficient. The effect of layout design is characterized with the shape factor, which is calculated for different sensor designs. Double layer polycrystalline silicon thermopile infrared sensors on suspended support membrane have been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed with measurement results.

Keywords: Polycrystalline silicon film, relaxation time approximation, specific detectivity, thermal conductivity, thermopile infrared sensor.

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855 Ageing Deterioration of Silicone Rubber Polymer Insulator under Salt Water Dip Wheel Test

Authors: J. Grasaesom, S.Thong-om, W. Payakcho, B. Marungsri

Abstract:

This paper presents the experimental results of silicone rubber polymer insulators for 22 kV systems under salt water dip wheel test based on IEC 62217. Straight shed silicone rubber polymer insulators having leakage distance 685 mm were tested continuously 30,000 cycles. One test cycle includes 4 positions, energized, de-energized, salt water dip and deenergized, respectively. For one test cycle, each test specimen remains stationary for about 40 second in each position and takes 8 second for rotate to next position. By visual observation, sever surface erosion was observed on the trunk near the energized end of tested specimen. Puncture was observed on the upper shed near the energized end. In addition, decreasing in hydrophobicity and increasing in hardness were measured on tested specimen comparing with new specimen. Furthermore, chemical analysis by ATR-FTIR was conducted in order to elucidate the chemical change of tested specimens comparing with new specimen.

Keywords: ageing of silicone rubber, salt water dip wheeltest, silicone rubber polymer insulator

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854 Aging Behaviour of 6061 Al-15 vol% SiC Composite in T4 and T6 Treatments

Authors: Melby Chacko, Jagannath Nayak

Abstract:

The aging behaviour of 6061 Al-15 vol% SiC composite was investigated using Rockwell B hardness measurement. The composite was solutionized at 350°C and quenched in water. The composite was aged at room temperature (T4 treatment) and also at 140°C, 160°C, 180°C and 200°C (T6 treatment). The natural and artificial aging behaviour of composite was studied using aging curves determined at different temperatures. The aging period for peak aging for different temperatures was identified. The time required for attaining peak aging decreased with increase in the aging temperature. The peak hardness was found to increase with increase with aging temperature and the highest peak hardness was observed at 180ºC. Beyond 180ºC the peak hardness was found to be decreasing.

Keywords: 6061 Al-SiC composite, Aging curve, Rockwell B hardness, T4, T6 treatments.

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853 On the Coupled Electromechanical Behavior of Artificial Materials with Chiral-Shell Elements

Authors: Anna Girchenko, Victor A. Eremeyev, Holm Altenbach

Abstract:

In the present work we investigate both the elastic and electric properties of a chiral material. We consider a composite structure made from a polymer matrix and anisotropic inclusions of GaAs taking into account piezoelectric and dielectric properties of the composite material. The principal task of the work is the estimation of the functional properties of the composite material.

Keywords: Coupled electromechanical behavior, Composite structure, Chiral metamaterial.

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852 Numerical Study for Structural Design of Composite Rotor with Crack Initiation

Authors: A. Chellil, A. Nour, S. Lecheb, H. Mechakra, A. Bouderba, H. Kebir

Abstract:

In this paper, a coupled damage effect in the instability of a composite rotor is presented, under dynamic loading response in the harmonic analysis condition. The analysis of the stress which operates the rotor is done. Calculations of different energies and the virtual work of the aerodynamic loads from the rotor blade are developed. The use of the composite material for the rotor offers a good stability. Numerical calculations on the model developed prove that the damage effect has a negative effect on the stability of the rotor. The study of the composite rotor in transient system allowed determining the vibratory responses due to various excitations.

Keywords: Rotor, composite, damage, finite element, numerical.

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851 Vertical GAA Silicon Nanowire Transistor with Impact of Temperature on Device Parameters

Authors: N. Shen, Z. X. Chen, K.D. Buddharaju, H. M. Chua, X. Li, N. Singh, G.Q Lo, D.-L. Kwong

Abstract:

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density.

Keywords: Gate-all-around, temperature dependence, silicon nanowire

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850 Comparison Ageing Deterioration of Silicone Rubber Outdoor Polymer Insulators in Artificial Accelerated Salt Fog Ageing Test

Authors: S.Thong-Om, W. Payakcho, J. Grasaesom, A. Oonsivilai, B. Marungsri

Abstract:

This paper presents the experimental results of silicone rubber outdoor polymer insulators in salt fog ageing test based on IEC 61109. Specimens made ofHTV silicone rubber with ATH content having three different configurations, straight shedsalternated sheds, and incline and alternate sheds, were tested continuously 1000 hrs.in artificial salt fog chamber. Contamination level, reduction of hydrophobicity and hardness measurement were used as physical damaged inspection techniques to evaluate degree of surface deterioration. In addition, chemical changing of tested specimen surface was evaluated by ATR-FTIRto confirm physical damaged inspection. After 1000 hrs.of salt fog test, differences in degree of surface deterioration were observed on all tested specimens. Physical damaged inspection and chemical analysis results confirmed the experimental results as well.

Keywords: Ageing deterioration, Silicone rubber, Polymer Insulator, Salt fog ageing test.

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849 Numerical and Experimental Stress Analysis of Stiffened Cylindrical Composite Shell under Transverse end Load

Authors: J. Arashmehr, G. H. Rahimi, S.F.Rasouli

Abstract:

Grid composite structures have many applications in aerospace industry in which deal with transverse loadings abundantly. In present paper a stiffened composite cylindrical shell with clamped-free boundary condition under transverse end load experimentally and numerically was studied. Some electrical strain gauges were employed to measure the strains. Also a finite element analysis was done for validation of experimental result. The FEM software used was ANSYS11. In addition, the results between stiffened composite shell and unstiffened composite shell were compared. It was observed that intersection of two stiffeners has an important effect in decrease of stress in the shell. Fairly good agreements were observed between the numerical and the measured results. According to recent studies about grid composite structures, it should be noted that any investigation like this research has not been reported.

Keywords: Grid composite structure, Transverse loadings, Strain measurement, Finite element analysis

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848 Tool Wear of Metal Matrix Composite 10wt% AlN Reinforcement Using TiB2 Cutting Tool

Authors: M. S. Said, J. A. Ghani, Che Hassan C. H., N. N. Wan, M. A. Selamat, R. Othman

Abstract:

Metal matrix composites (MMCs) attract considerable attention as a result from its ability in providing a high strength, high modulus, high toughness, high impact properties, improving wear resistance and providing good corrosion resistance compared to unreinforced alloy. Aluminium Silicon (Al/Si) alloy MMC has been widely used in various industrial sectors such as in transportation, domestic equipment, aerospace, military, construction, etc. Aluminium silicon alloy is an MMC that had been reinforced with aluminium nitrate (AlN) particle and become a new generation material use in automotive and aerospace sector. The AlN is one of the advance material that have a bright prospect in future since it has features such as lightweight, high strength, high hardness and stiffness quality. However, the high degree of ceramic particle reinforcement and the irregular nature of the particles along the matrix material that contribute to its low density is the main problem which leads to difficulties in machining process. This paper examined the tool wear when milling AlSi/AlN Metal Matrix Composite using a TiB2 (Titanium diboride) coated carbide cutting tool. The volume of the AlN reinforced particle was 10% and milling process was carried out under dry cutting condition. The TiB2 coated carbide insert parameters used were at the cutting speed of (230, 300 and 370m/min, feed rate of 0.8, Depth of Cut (DoC) at 0.4m). The Sometech SV-35 video microscope system used to quantify of the tool wear. The result shown that tool life span increasing with the cutting speeds at (370m/min, feed rate of 0.8mm/tooth and DoC at 0.4mm) which constituted an optimum condition for longer tool life lasted until 123.2 mins. Meanwhile, at medium cutting speed which at 300m/m, feed rate of 0.8mm/tooth and depth of cut at 0.4mm we found that tool life span lasted until 119.86 mins while at low cutting speed it lasted in 119.66 mins. High cutting speed will give the best parameter in cutting AlSi/AlN MMCs material. The result will help manufacturers in machining process of AlSi/AlN MMCs materials.

Keywords: AlSi/AlN Metal Matrix Composite milling process, tool wear, TiB2 coated cemented carbide tool.

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