Optimization of Thermopile Sensor Performance of Polycrystalline Silicon Film
Authors: Li Long, Thomas Ortlepp
Abstract:
A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor and sensor layout shape factor. Based on the properties of electrons, phonons, grain boundaries and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of Boltzmann transport equation. The model includes the effects of grain structure, grain boundary trap properties and doping concentration. The layer structure factor of sensor is analyzed with respect to infrared absorption coefficient. The effect of layout design is characterized with the shape factor, which is calculated for different sensor designs. Double layer polycrystalline silicon thermopile infrared sensors on suspended support membrane have been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed with measurement results.
Keywords: Polycrystalline silicon film, relaxation time approximation, specific detectivity, thermal conductivity, thermopile infrared sensor.
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[1] C. Goupil, W. Seifert, K. Zabrocki, E. M¨uller, and G. J. Snyder, “Thermodynamics of thermoelectric phenomena and applications,” Entropy, vol. 2011, no. 13, pp. 1481–1516, Aug. 2011.
[2] A. Graf, M. Arndt, and G. Gerlach, “Seebeck’s effect in micromachined thermopiles for infrared detection. A review,” Proc. Estonian Acad. Sci. Eng., vol. 13, no. 4, pp. 338–353, June 2007.
[3] U. Dillner, E. Kessler, and H. G. Meyer, “Figures of merit of thermoelectric and bolometric thermal radiation sensors,” J. Sens. Sens. Syst., vol. 2, no. 1, pp. 85–94, June 2013.
[4] H. Zhou, P. Kropelnicki, J. M. Tsai, and C. Lee, “Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process,” J. Micromech. Microeng., vol. 23, no. 6, p. 065026, May 2013.
[5] H. B. Callen, “The application of Onsager’s reciprocal relations to thermoelectric, thermomagnetic, and galvanomagnetic effects,” Phys. Rev., vol. 73, no. 11, pp. 1349–1358, Jun. 1948.
[6] N. C.-C. Lu, L. Gerzberg, C.-Y. Lu, and J. D. Meindl, “Modeling and optimization of monolithic polycrystalline silicon resistors,” IEEE Transactions on Electron Devices, vol. ED-28, no. 7, pp. 818–830, Jul. 1981.
[7] J. Y. W. Seto, “The electrical properties of polycrystalline silicon films,” J. Appl. Phys., vol. 46, no. 12, pp. 5247–5254, Dec. 1975.
[8] A. D. McConnell, S. Uma, and K. E. Goodson, “Thermal conductivity of doped polysilicon layers,” J. MICROELECTROMECHANICAL SYSTEMS, vol. 10, no. 3, pp. 360–369, Sep. 2001.
[9] N. Neophytou, X. Zianni, H. Kosina, S. Frabboni, B. Lorenzi, and D. Narducci, “Simultaneous increase in electrical conductivity and seebeck coefficient in highly boron-doped nanocrystalline Si,” Nanotechnology, vol. 24, no. 20, p. 205402, May 2013.
[10] A. C. Sparavigna, “The boltzmann equation of phonon thermal transport solved in the relaxation time approximation - I - Theory,” Mechanics, Materials Science & Engineering, vol. 2016, no. 3, pp. 34–45, Mar. 2016.
[11] C. B. Vining, “A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys,” J. Appl. Phys., vol. 69, no. 1, pp. 331–341, Jan. 1991.
[12] L. Long and T. Ortlepp, “Thermoelectric properties of doped polycrystalline silicon film,” This proceeding, July 2022.
[13] M. G. Holland, “Analysis of lattice thermal conductivity,” Phys. Rev., vol. 132, no. 6, pp. 2461–2471, Dec. 1963.
[14] J. Y. W. Seto, “Deposition of polycrystalline silicon by pyrolysis of silane in argon,” J. Electrochem. Soc.: Solid-State Science and Technology, vol. 122, no. 5, pp. 701–706, May 1975.
[15] B. P. Tyagi and K. Sen, “Electrical properties of polycrystalline silicon in the dark and under illumination,” phys. stat. sol. (a), vol. 90, no. 2, pp. 709–713, Aug. 1985.
[16] N. C.-C. Lu, L. Gerzberg, C.-Y. Lu, and J. D. Meindl, “A conduction model for semiconductor-grain-boundary-semiconductor barriers in polycrystalline-silicon films,” IEEE Transactions on Electron Devices, vol. ED-30, no. 2, pp. 137–149, Feb. 1983.
[17] M. Tuohiniemi, M. Blomberg, and F. Gao, “Infrared spectroscopy study of a poly-silicon film for optimizing the boron-implanting dose,” JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, vol. 22, no. 5, pp. 1207–1212, Oct. 2013.
[18] Silvaco, Athena user’s manual. Santa Clara, CA 95054: Silvaco, Inc, 2015.