%0 Journal Article
	%A Satoru Kaneko and  Takeshi Ito and  Kensuke Akiyama and  Manabu Yasui and  Chihiro Kato and  Satomi Tanaka and  Yasuo Hirabayashi and  Takeshi Ozawa and  Akira Matsuno and  Takashi Nire and  Hiroshi Funakubo and  Mamoru Yoshimoto
	%D 2011
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 50, 2011
	%T Effect of CW Laser Annealing on Silicon Surface for Application of Power Device
	%U https://publications.waset.org/pdf/13358
	%V 50
	%X As application of re-activation of backside on power
device Insulated Gate Bipolar Transistor (IGBT), laser annealing was
employed to irradiate amorphous silicon substrate, and resistivities
were measured using four point probe measurement. For annealing
the amorphous silicon two lasers were used at wavelength of visible
green (532 nm) together with Infrared (793 nm). While the green
laser efficiently increased temperature at top surface the Infrared
laser reached more deep inside and was effective for melting the
top surface. A finite element method was employed to evaluate time
dependent thermal distribution in silicon substrate.
	%P 206 - 208