%0 Journal Article %A Satoru Kaneko and Takeshi Ito and Kensuke Akiyama and Manabu Yasui and Chihiro Kato and Satomi Tanaka and Yasuo Hirabayashi and Takeshi Ozawa and Akira Matsuno and Takashi Nire and Hiroshi Funakubo and Mamoru Yoshimoto %D 2011 %J International Journal of Materials and Metallurgical Engineering %B World Academy of Science, Engineering and Technology %I Open Science Index 50, 2011 %T Effect of CW Laser Annealing on Silicon Surface for Application of Power Device %U https://publications.waset.org/pdf/13358 %V 50 %X As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate. %P 206 - 208