Search results for: SNWT (silicon nanowire transistor)
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 303

Search results for: SNWT (silicon nanowire transistor)

63 Low Power CNFET SRAM Design

Authors: Pejman Hosseiniun, Rose Shayeghi, Iman Rahbari, Mohamad Reza Kalhor

Abstract:

CNFET has emerged as an alternative material to silicon for high performance, high stability and low power SRAM design in recent years. SRAM functions as cache memory in computers and many portable devices. In this paper, a new SRAM cell design based on CNFET technology is proposed. The proposed SRAM cell design for CNFET is compared with SRAM cell designs implemented with the conventional CMOS and FinFET in terms of speed, power consumption, stability, and leakage current. The HSPICE simulation and analysis show that the dynamic power consumption of the proposed 8T CNFET SRAM cell’s is reduced about 48% and the SNM is widened up to 56% compared to the conventional CMOS SRAM structure at the expense of 2% leakage power and 3% write delay increase.

Keywords: SRAM cell, CNFET, low power, HSPICE.

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62 Design and Characterization of a CMOS Process Sensor Utilizing Vth Extractor Circuit

Authors: Rohana Musa, Yuzman Yusoff, Chia Chieu Yin, Hanif Che Lah

Abstract:

This paper presents the design and characterization of a low power Complementary Metal Oxide Semiconductor (CMOS) process sensor. The design is targeted for implementation using Silterra’s 180 nm CMOS process technology. The proposed process sensor employs a voltage threshold (Vth) extractor architecture for detection of variations in the fabrication process. The process sensor generates output voltages in the range of 401 mV (fast-fast corner) to 443 mV (slow-slow corner) at nominal condition. The power dissipation for this process sensor is 6.3 µW with a supply voltage of 1.8V with a silicon area of 190 µm X 60 µm. The preliminary result of this process sensor that was fabricated indicates a close resemblance between test and simulated results.

Keywords: CMOS Process sensor, Process, Voltage and Temperature (PVT) sensor, threshold extractor circuit, Vth extractor circuit.

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61 Development of a New Polymeric Material with Controlled Surface Micro-Morphology Aimed for Biosensors Applications

Authors: Elham Farahmand, Fatimah Ibrahim, Samira Hosseini, Ivan Djordjevic, Leo. H. Koole

Abstract:

Compositions of different molar ratios of polymethylmethacrylate-co-methacrylic acid (PMMA-co-MAA) were synthesized via free-radical polymerization. Polymer coated surfaces have been produced on silicon wafers. Coated samples were analyzed by atomic force microscopy (AFM). The results have shown that the roughness of the surfaces have increased by increasing the molar ratio of monomer methacrylic acid (MAA). This study reveals that the gradual increase in surface roughness is due to the fact that carboxylic functional groups have been generated by MAA segments. Such surfaces can be desirable platforms for fabrication of the biosensors for detection of the viruses and diseases.

Keywords: Polymethylmethacrylate-co-methacrylic acid (PMMA-co-MAA), Polymeric material, Atomic Force Microscopy, roughness, carboxylic functional groups.

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60 Effect of Gamma Irradiation on Structural and Optical Properties of ZnO/Mesoporous Silica Nanocomposite

Authors: K. Sowri Babu, P. Srinath, N. Rajeswara Rao, K. Venugopal Reddy

Abstract:

The effect of gamma ray irradiation on morphology and optical properties of ZnO/Mesoporous silica (MPS) nanocomposite was studied. The ZnO/MPS nanocomposite was irradiated with gamma rays of doses 30, 60, and 90 kGy and dose-rate of irradiation was 0.15 kGy/hour. Irradiated samples are characterized with FE-SEM, FT-IR, UV-vis, and Photoluminescence (PL) spectrometers. SEM pictures showed that morphology changed from spherical to flake like morphology. UV-vis analysis showed that the band gap increased with increase of gamma ray irradiation dose. This enhancement of the band gap is assigned to the depletion of oxygen vacancies with irradiation. The intensity of PL peak decreased gradually with increase of gamma ray irradiation dose. The decrease in PL intensity is attributed to the decrease of oxygen vacancies at the interface due to poor interface and improper passivation between ZnO/MPS.

Keywords: ZnO nanoparticles, photoluminescence, porous silicon, nanocomposites.

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59 Signal-to-Noise Ratio Improvement of EMCCD Cameras

Authors: Wen W. Zhang, Qian Chen, Bei B. Zhou, Wei J. He

Abstract:

Over the past years, the EMCCD has had a profound influence on photon starved imaging applications relying on its unique multiplication register based on the impact ionization effect in the silicon. High signal-to-noise ratio (SNR) means high image quality. Thus, SNR improvement is important for the EMCCD. This work analyzes the SNR performance of an EMCCD with gain off and on. In each mode, simplified SNR models are established for different integration times. The SNR curves are divided into readout noise (or CIC) region and shot noise region by integration time. Theoretical SNR values comparing long frame integration and frame adding in each region are presented and discussed to figure out which method is more effective. In order to further improve the SNR performance, pixel binning is introduced into the EMCCD. The results show that pixel binning does obviously improve the SNR performance, but at the expensive of the spatial resolution.

Keywords: EMCCD, SNR improvement, pixel binning

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58 Single Phase 13-Level D-STATCOM Inverter with Distributed System

Authors: R. Kamalakannan, N. Ravi Kumar

Abstract:

The global energy consumption is increasing persistently and need for distributed power generation through renewable energy is essential. To meet the power requirements for consumers without any voltage fluctuations and losses, modeling and design of multilevel inverter with Flexible AC Transmission System (FACTS) capability is presented. The presented inverter is provided with 13-level cascaded H-bridge topology of Insulated Gate Bipolar Transistor (IGBTs) connected along with inbuilt Distributed Static Synchronous Compensators (DSTATCOM). The DSTATCOM device provides control of power factor stability at local feeder lines and the inverter eliminates Total Harmonic Distortion (THD). The 13-level inverter utilizes 52 switches of each H-bridge is fed with single DC sources separately and the Pulse Width Modulation (PWM) technique is used for switching IGBTs. The control strategy implemented for inverter transmits active power to grid as well as it maintains power factor to be stable with achievement of steady state power transmission. Significant outcome of this project is improvement of output voltage quality with steady state power transmission with low THD. Simulation of inverter with DSTATCOM is performed using MATLAB/Simulink environment. The scaled prototype model of proposed inverter is built and its results were validated with simulated results.

Keywords: FACTS devices, distributed-Static synchronous compensators, DSTATCOM, total harmonics elimination, modular multilevel converter.

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57 Multi-Level Pulse Width Modulation to Boost the Power Efficiency of Switching Amplifiers for Analog Signals with Very High Crest Factor

Authors: Jan Doutreloigne

Abstract:

The main goal of this paper is to develop a switching amplifier with optimized power efficiency for analog signals with a very high crest factor such as audio or DSL signals. Theoretical calculations show that a switching amplifier architecture based on multi-level pulse width modulation outperforms all other types of linear or switching amplifiers in that respect. Simulations on a 2 W multi-level switching audio amplifier, designed in a 50 V 0.35 mm IC technology, confirm its superior performance in terms of power efficiency. A real silicon implementation of this audio amplifier design is currently underway to provide experimental validation.

Keywords: Audio amplifier, multi-level switching amplifier, power efficiency, pulse width modulation, PWM, self-oscillating amplifier.

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56 Improvement of Chemical Demulsifier Performance Using Silica Nanoparticles

Authors: G. E. Gandomkar, E. Bekhradinassab, S. Sabbaghi, M. M. Zerafat

Abstract:

The reduction of water content in crude oil emulsions reduces pipeline corrosion potential and increases the productivity. Chemical emulsification of crude oil emulsions is one of the methods available to reduce the water content. Presence of demulsifier causes the film layer between the crude oil emulsion and water droplets to become unstable leading to the acceleration of water coalescence. This research has been performed to study the improvement performance of a chemical demulsifier by silica nanoparticles. The silica nano-particles have been synthesized by sol-gel technique and precipitation using poly vinyl alcohol (PVA) and poly ethylene glycol (PEG) as surfactants and then nano-particles are added to the demulsifier. The silica nanoparticles were characterized by Particle Size Analyzer (PSA) and SEM. Upon the addition of nanoparticles, bottle tests have been carried out to separate and measure the water content. The results show that silica nano-particles increase the demulsifier efficiency by about 40%.

Keywords: Demulsifier, dehydration, silicon dioxide, nanoparticle.

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55 Development of Quasi-Two-Dimensional Nb2O5 for Functional Electrodes of Advanced Electrochemical Systems

Authors: S. Zhuiykov, E. Kats

Abstract:

In recent times there has been a growing interest in the development of quasi-two-dimensional niobium pentoxide (Nb2O5) as a semiconductor for the potential electronic applications such as capacitors, filtration, dye-sensitised solar cells and gas sensing platforms. Therefore once the purpose is established, Nb2O5 can be prepared in a number of nano- and sub-micron-structural morphologies that include rods, wires, belts and tubes. In this study films of Nb2O5 were prepared on gold plated silicon substrate using spin-coating technique and subsequently by mechanical exfoliation. The reason this method was employed was to achieve layers of less than 15nm in thickness. The sintering temperature of the specimen was 800oC. The morphology and structural characteristics of the films were analyzed by Atomic Force Microscopy (AFM), Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS).

Keywords: Mechanical exfoliation, niobium pentoxide, quazitwo- dimensional, semiconductor, sol-gel, spin-coating, two dimensional semiconductors.

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54 High Optical Properties and Rectifying Behavior of ZnO (Nano and Microstructures)/Si Heterostructures

Authors: Ramin Yousefi, Muhamad. Rasat. Muhamad

Abstract:

We investigated a modified thermal evaporation method in the growth process of ZnO nanowires. ZnO nanowires were fabricated on p-type silicon substrates without using a metal catalyst. A simple horizontal double-tube system along with chemical vapor diffusion of the precursor was used to grow the ZnO nanowires. The substrates were placed in different temperature zones, and ZnO nanowires with different diameters were obtained for the different substrate temperatures. In addition to the nanowires, ZnO microdiscs with different diameters were obtained on another substrate, which was placed at a lower temperature than the other substrates. The optical properties and crystalline quality of the ZnO nanowires and microdiscs were characterized by room temperature photoluminescence (PL) and Raman spectrometers. The PL and Raman studies demonstrated that the ZnO nanowires and microdiscs grown using such set-up had good crystallinity with excellent optical properties. Rectifying behavior of ZnO/Si heterostructures was characterized by a simple DC circuit.

Keywords: ZnO nano and microstructures, Photoluminescence, Raman, Rectifying behavior.

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53 Design of Reliable and Low Cost Substrate Heater for Thin Film Deposition

Authors: Ali Eltayeb Muhsin, Mohamed Elhadi Elsari

Abstract:

The substrate heater designed for this investigation is a front side substrate heating system. It consists of 10 conventional tungsten halogen lamps and an aluminum reflector, total input electrical power of 5 kW. The substrate is heated by means of a radiation from conventional tungsten halogen lamps directed to the substrate through a glass window. This design allows easy replacement of the lamps and maintenance of the system. Within 2 to 6 minutes the substrate temperature reaches 500 to 830 C by varying the vertical distance between the glass window and the substrate holder. Moreover, the substrate temperature can be easily controlled by controlling the input power to the system. This design gives excellent opportunity to deposit many deferent films at deferent temperatures in the same deposition time. This substrate heater was successfully used for Chemical Vapor Deposition (CVD) of many thin films, such as Silicon, iron, etc.

Keywords: CVD, Halogen Lamp, Substrate Heater, Thin Films.

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52 A Generic and Extensible Spidergon NoC

Authors: Abdelkrim Zitouni, Mounir Zid, Sami Badrouchi, Rached Tourki

Abstract:

The Globally Asynchronous Locally Synchronous Network on Chip (GALS NoC) is the most efficient solution that provides low latency transfers and power efficient System on Chip (SoC) interconnect. This study presents a GALS and generic NoC architecture based on a configurable router. This router integrates a sophisticated dynamic arbiter, the wormhole routing technique and can be configured in a manner that allows it to be used in many possible NoC topologies such as Mesh 2-D, Tree and Polygon architectures. This makes it possible to improve the quality of service (QoS) required by the proposed NoC. A comparative performances study of the proposed NoC architecture, Tore architecture and of the most used Mesh 2D architecture is performed. This study shows that Spidergon architecture is characterised by the lower latency and the later saturation. It is also shown that no matter what the number of used links is raised; the Links×Diameter product permitted by the Spidergon architecture remains always the lower. The only limitation of this architecture comes from it-s over cost in term of silicon area.

Keywords: Dynamic arbiter, Generic router, Spidergon NoC, SoC.

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51 Spark Breakdown Voltage and Surface Degradation of Multiwalled Carbon Nanotube Electrode Surfaces

Authors: M. G. Rostedt, M. J. Hall, L. Shi, R. D. Matthews

Abstract:

Silicon substrates coated with multiwalled carbon nanotubes (MWCNTs) were experimentally investigated to determine spark breakdown voltages relative to uncoated surfaces, the degree of surface degradation associated with the spark discharge, and techniques to minimize the surface degradation. The results may be applicable to instruments or processes that use MWCNT as a means of increasing local electric field strength and where spark breakdown is a possibility that might affect the devices’ performance or longevity. MWCNTs were shown to reduce the breakdown voltage of a 1mm gap in air by 30-50%. The relative decrease in breakdown voltage was maintained over gap distances of 0.5 to 2mm and gauge pressures of 0 to 4 bar. Degradation of the MWCNT coated surfaces was observed. Several techniques to improve durability were investigated. These included: chromium and gold-palladium coatings, tube annealing, and embedding clusters of MWCNT in a ceramic matrix.

Keywords: Ionization sensor, spark, nanotubes, electrode, breakdown.

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50 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center.

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49 A Novel Multiple Valued Logic OHRNS Modulo rn Adder Circuit

Authors: Mehdi Hosseinzadeh, Somayyeh Jafarali Jassbi, Keivan Navi

Abstract:

Residue Number System (RNS) is a modular representation and is proved to be an instrumental tool in many digital signal processing (DSP) applications which require high-speed computations. RNS is an integer and non weighted number system; it can support parallel, carry-free, high-speed and low power arithmetic. A very interesting correspondence exists between the concepts of Multiple Valued Logic (MVL) and Residue Number Arithmetic. If the number of levels used to represent MVL signals is chosen to be consistent with the moduli which create the finite rings in the RNS, MVL becomes a very natural representation for the RNS. There are two concerns related to the application of this Number System: reaching the most possible speed and the largest dynamic range. There is a conflict when one wants to resolve both these problem. That is augmenting the dynamic range results in reducing the speed in the same time. For achieving the most performance a method is considere named “One-Hot Residue Number System" in this implementation the propagation is only equal to one transistor delay. The problem with this method is the huge increase in the number of transistors they are increased in order m2 . In real application this is practically impossible. In this paper combining the Multiple Valued Logic and One-Hot Residue Number System we represent a new method to resolve both of these two problems. In this paper we represent a novel design of an OHRNS-based adder circuit. This circuit is useable for Multiple Valued Logic moduli, in comparison to other RNS design; this circuit has considerably improved the number of transistors and power consumption.

Keywords: Computer Arithmetic, Residue Number System, Multiple Valued Logic, One-Hot, VLSI.

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48 Influence of PLA Film Packaging on the Shelf Life of Soft Cheese Kleo

Authors: Lija Dukalska, Sandra Muizniece-Brasava, Irisa Murniece, Ilona Dabina-Bicka, Emils Kozlinskis, Svetlana Sarvi

Abstract:

Experiments were carried out at the Faculty of Food Technology of Latvia University of Agriculture (LLU). Soft cheese Kleo produced in Latvia was packed in a biodegradable PLA without barrierproperties and VC999 BioPack lidding film PLA, coated with a barrier of pure silicon oxide (SiOx) and in combination with modified atmosphere (MAP) the influence on the shelf life was investigated and compared with some conventional (OPP, PE/PA, PE/OPA and Multibarrier 60) polymer film impact. Modified atmosphere consisted of carbon dioxide CO2 (E 290) 30% and nitrogen N2 (E 941) 70%. The analyzable samples were stored at the temperature of +4.0±0.5 °C up to 32 days- and analyzed before packaging and in the 0, 5th, 11th, 15th, 18th, 22nd, 25th, 29th and 32nd day of storage. The shelf life was extended along to 32 days, good outside appearance and lactic acid aroma was observed.

Keywords: Soft cheese, modified atmosphere, conventional andbiodegradable PLA film, shelf life

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47 SCR-Stacking Structure with High Holding Voltage for I/O and Power Clamp

Authors: Hyun-Young Kim, Chung-Kwang Lee, Han-Hee Cho, Sang-Woon Cho, Yong-Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp.

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46 Increase of Sensitivity in 3D Suspended Polymeric Microfluidic Platform through Lateral Misalignment

Authors: Ehsan Yazdanpanah Moghadam, Muthukumaran Packirisamy

Abstract:

In the present study, a design of the suspended polymeric microfluidic platform is introduced that is fabricated with three polymeric layers. Changing the microchannel plane to be perpendicular to microcantilever plane, drastically decreases moment of inertia in that direction. In addition, the platform is made of polymer (around five orders of magnitude less compared to silicon). It causes significant increase in the sensitivity of the cantilever deflection. Next, although the dimensions of this platform are constant, by misaligning the embedded microchannels laterally in the suspended microfluidic platform, the sensitivity can be highly increased. The investigation is studied on four fluids including water, seawater, milk, and blood for flow ranges from low rate of 5 to 70 µl/min to obtain the best design with the highest sensitivity. The best design in this study shows the sensitivity increases around 50% for water, seawater, milk, and blood at the flow rate of 70 µl/min by just misaligning the embedded microchannels in the suspended polymeric microfluidic platform.

Keywords: Microfluidic, biosensor, MEMS.

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45 Impact of Machining Parameters on the Surface Roughness of Machined PU Block

Authors: Louis Denis Kevin Catherine, Raja Aziz Raja Ma’arof, Azrina Arshad, Sangeeth Suresh

Abstract:

Machining parameters are very important in determining the surface quality of any material. In the past decade, some new engineering materials were developed for the manufacturing industry which created a need to conduct an investigation on the impact of the said parameters on their surface roughness. Polyurethane (PU) block is widely used in the automotive industry to manufacture parts such as checking fixtures that are used to verify the dimensional accuracy of automotive parts. In this paper, the design of experiment (DOE) was used to investigate on the effect of the milling parameters on the PU block. Furthermore, an analysis of the machined surface chemical composition was done using scanning electron microscope (SEM). It was found that the surface roughness of the PU block is severely affected when PU undergoes a flood machining process instead of a dry condition. In addition the stepover and the silicon content were found to be the most significant parameters that influence the surface quality of the PU block.

Keywords: Polyurethane (PU), design of experiment (DOE), scanning electron microscope (SEM), surface roughness.

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44 Modeling Reflection and Transmission of Elastodiffussive Wave Sata Semiconductor Interface

Authors: A. A. Sharma, B. J. N. Sharma

Abstract:

This paper deals with the study of reflection and transmission characteristics of acoustic waves at the interface of a semiconductor half-space and elastic solid. The amplitude ratios (reflection and transmission coefficients) of reflected and transmitted waves to that of incident wave varying with the incident angles have been examined for the case of quasi-longitudinal wave. The special cases of normal and grazing incidence have also been derived with the help of Gauss elimination method. The mathematical model consisting of governing partial differential equations of motion and charge carriers’ diffusion of n-type semiconductors and elastic solid has been solved both analytically and numerically in the study. The numerical computations of reflection and transmission coefficients has been carried out by using MATLAB programming software for silicon (Si) semiconductor and copper elastic solid. The computer simulated results have been plotted graphically for Si semiconductors. The study may be useful in semiconductors, geology, and seismology in addition to surface acoustic wave (SAW) devices.

Keywords: Quasilongitudinal, reflection and transmission, semiconductors, acoustics.

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43 Li4SiO4 Prepared by Sol-gel Method as Potential Host for LISICON Structured Solid Electrolytes

Authors: Syed Bahari Ramadzan Syed Adnan, Nor Sabirin Mohamed, Norwati K.A

Abstract:

In this study, Li4SiO4 powder was successfully synthesized via sol gel method followed by drying at 150oC. Lithium oxide, Li2O and silicon oxide, SiO2 were used as the starting materials with citric acid as the chelating agent. The obtained powder was then sintered at various temperatures. Crystallographic phase analysis, morphology and ionic conductivity were investigated systematically employing X-ray diffraction, Fourier Transform Infrared, Scanning Electron Microscopy and AC impedance spectroscopy. XRD result showed the formation of pure monoclinic Li4SiO4 crystal structure with lattice parameters a = 5.140 Å, b = 6.094 Å, c = 5.293 Å, β = 90o in the sample sintered at 750oC. This observation was confirmed by FTIR analysis. The bulk conductivity of this sample at room temperature was 3.35 × 10-6 S cm-1 and the highest bulk conductivity of 1.16 × 10-4 S cm-1 was obtained at 100°C. The results indicated that, the Li4SiO4 compound has potential to be used as host for LISICON structured solid electrolyte for low temperature application.

Keywords: Conductivity, LISICON, Li4SiO4, Solid electrolyte, Structure.

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42 Fully Parameterizable FPGA based Crypto-Accelerator

Authors: Iqbalur Rahman, Miftahur Rahman, Abul L Haque, Mostafizur Rahman,

Abstract:

In this paper, RSA encryption algorithm and its hardware implementation in Xilinx-s Virtex Field Programmable Gate Arrays (FPGA) is analyzed. The issues of scalability, flexible performance, and silicon efficiency for the hardware acceleration of public key crypto systems are being explored in the present work. Using techniques based on the interleaved math for exponentiation, the proposed RSA calculation architecture is compared to existing FPGA-based solutions for speed, FPGA utilization, and scalability. The paper covers the RSA encryption algorithm, interleaved multiplication, Miller Rabin algorithm for primality test, extended Euclidean math, basic FPGA technology, and the implementation details of the proposed RSA calculation architecture. Performance of several alternative hardware architectures is discussed and compared. Finally, conclusion is drawn, highlighting the advantages of a fully flexible & parameterized design.

Keywords: Crypto Accelerator, FPGA, Public Key Cryptography, RSA.

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41 A Novel Genetic Algorithm Designed for Hardware Implementation

Authors: Zhenhuan Zhu, David Mulvaney, Vassilios Chouliaras

Abstract:

A new genetic algorithm, termed the 'optimum individual monogenetic genetic algorithm' (OIMGA), is presented whose properties have been deliberately designed to be well suited to hardware implementation. Specific design criteria were to ensure fast access to the individuals in the population, to keep the required silicon area for hardware implementation to a minimum and to incorporate flexibility in the structure for the targeting of a range of applications. The first two criteria are met by retaining only the current optimum individual, thereby guaranteeing a small memory requirement that can easily be stored in fast on-chip memory. Also, OIMGA can be easily reconfigured to allow the investigation of problems that normally warrant either large GA populations or individuals many genes in length. Local convergence is achieved in OIMGA by retaining elite individuals, while population diversity is ensured by continually searching for the best individuals in fresh regions of the search space. The results given in this paper demonstrate that both the performance of OIMGA and its convergence time are superior to those of a range of existing hardware GA implementations.

Keywords: Genetic algorithms, genetic hardware, machinelearning.

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40 Influence of Textured Clusters on the Goss Grains Growth in Silicon Steels Consideration of Energy and Mobility

Authors: H. Afer, N. Rouag, R. Penelle

Abstract:

In the Fe-3%Si sheets, grade Hi-B, with AlN and MnS as inhibitors, the Goss grains which abnormally grow do not have a size greater than the average size of the primary matrix. In this heterogeneous microstructure, the size factor is not a required condition for the secondary recrystallization. The onset of the small Goss grain abnormal growth appears to be related to a particular behavior of their grain boundaries, to the local texture and to the distribution of the inhibitors. The presence and the evolution of oriented clusters ensure to the small Goss grains a favorable neighborhood to grow. The modified Monte-Carlo approach, which is applied, considers the local environment of each grain. The grain growth is dependent of its real spatial position; the matrix heterogeneity is then taken into account. The grain growth conditions are considered in the global matrix and in different matrixes corresponding to A component clusters. The grain growth behaviour is considered with introduction of energy only, energy and mobility, energy and mobility and precipitates.

Keywords: Abnormal grain growth, grain boundary energy andmobility, neighbourhood, oriented clusters.

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39 Wetting Characterization of High Aspect Ratio Nanostructures by Gigahertz Acoustic Reflectometry

Authors: C. Virgilio, J. Carlier, P. Campistron, M. Toubal, P. Garnier, L. Broussous, V. Thomy, B. Nongaillard

Abstract:

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real challenge in integrated circuits manufacturing. In fact, bad or non-uniform wetting during wet processes limits chemical reactions and can lead to non-complete etching or cleaning inside the patterns and device defectivity. This issue is more and more important with the transistors size shrinkage and concerns mainly high aspect ratio structures. Deep Trench Isolation (DTI) structures enabling pixels’ isolation in imaging devices are subject to this phenomenon. While low-frequency acoustic reflectometry principle is a well-known method for Non Destructive Test applications, we have recently shown that it is also well suited for nanostructures wetting characterization in a higher frequency range. In this paper, we present a high-frequency acoustic reflectometry characterization of DTI wetting through a confrontation of both experimental and modeling results. The acoustic method proposed is based on the evaluation of the reflection of a longitudinal acoustic wave generated by a 100 µm diameter ZnO piezoelectric transducer sputtered on the silicon wafer backside using MEMS technologies. The transducers have been fabricated to work at 5 GHz corresponding to a wavelength of 1.7 µm in silicon. The DTI studied structures, manufactured on the wafer frontside, are crossing trenches of 200 nm wide and 4 µm deep (aspect ratio of 20) etched into a Si wafer frontside. In that case, the acoustic signal reflection occurs at the bottom and at the top of the DTI enabling its characterization by monitoring the electrical reflection coefficient of the transducer. A Finite Difference Time Domain (FDTD) model has been developed to predict the behavior of the emitted wave. The model shows that the separation of the reflected echoes (top and bottom of the DTI) from different acoustic modes is possible at 5 Ghz. A good correspondence between experimental and theoretical signals is observed. The model enables the identification of the different acoustic modes. The evaluation of DTI wetting is then performed by focusing on the first reflected echo obtained through the reflection at Si bottom interface, where wetting efficiency is crucial. The reflection coefficient is measured with different water / ethanol mixtures (tunable surface tension) deposited on the wafer frontside. Two cases are studied: with and without PFTS hydrophobic treatment. In the untreated surface case, acoustic reflection coefficient values with water show that liquid imbibition is partial. In the treated surface case, the acoustic reflection is total with water (no liquid in DTI). The impalement of the liquid occurs for a specific surface tension but it is still partial for pure ethanol. DTI bottom shape and local pattern collapse of the trenches can explain these incomplete wetting phenomena. This high-frequency acoustic method sensitivity coupled with a FDTD propagative model thus enables the local determination of the wetting state of a liquid on real structures. Partial wetting states for non-hydrophobic surfaces or low surface tension liquids are then detectable with this method.

Keywords: Wetting, acoustic reflectometry, gigahertz, semiconductor.

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38 An Inductive Coupling Based CMOS Wireless Powering Link for Implantable Biomedical Applications

Authors: Lei Yao, Jia Hao Cheong, Rui-Feng Xue, Minkyu Je

Abstract:

A closed-loop controlled wireless power transmission circuit block for implantable biomedical applications is described in this paper. The circuit consists of one front-end rectifier, power management sub-block including bandgap reference and low drop-out regulators (LDOs) as well as transmission power detection / feedback circuits. Simulation result shows that the front-end rectifier achieves 80% power efficiency with 750-mV single-end peak-to-peak input voltage and 1.28-V output voltage under load current of 4 mA. The power management block can supply 1.8mA average load current under 1V consuming only 12μW power, which is equivalent to 99.3% power efficiency. The wireless power transmission block described in this paper achieves a maximum power efficiency of 80%. The wireless power transmission circuit block is designed and implemented using UMC 65-nm CMOS/RF process. It occupies 1 mm × 1.2 mm silicon area.

Keywords: Implantable biomedical devices, wireless power transfer, LDO, rectifier, closed-loop power control

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37 Electrical Properties of Roystonea regia Fruit Extract as Dye Sensitized Solar Cells

Authors: Adenike Boyo, Olasunkanmi Kesinro, Henry Boyo, Surukite Oluwole

Abstract:

Utilizing solar energy in producing electricity can minimize environmental pollution generated by fossil fuel in producing electricity. Our research was base on the extraction of dye from Roystonea regia fruit by using methanol as solvent. The dye extracts were used as sensitizers in Dye-sensitized solar cell (DSSCs). Study was done on the electrical properties from the extracts of Roystonea regia fruit as Dye-sensitized solar cell (DSSCs). The absorptions of the extracts and extracts with dye were determined at different wavelengths (350-1000nm). Absorption peak was observed at 1.339 at wavelength 400nm. The obtained values for methanol extract Roystonea regia extract are, Imp = 0.015mA, Vmp = 12.0mV, fill factor = 0.763, Isc= 0.018 mA and Voc = 13.1 mV and efficiency of 0.32%. .The phytochemical screening was taken and it was observed that Roystonea regia extract contained less of anthocyanin compared to flavonoids. The nanostructured dye sensitized solar cell (DSSC) will provide economically credible alternative to present day silicon p–n junction photovoltaic.

Keywords: Methanol, Ethanol, Titanium dioxide, Roystonea regia fruit, Dye-sensitized solar cell.

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36 Laser-Ultrasonic Method for Measuring the Local Elastic Moduli of Porous Isotropic Composite Materials

Authors: Alexander A. Karabutov, Natalia B. Podymova, Elena B. Cherepetskaya, Vladimir A. Makarov, Yulia G. Sokolovskaya

Abstract:

The laser-ultrasonic method is realized for quantifying the influence of porosity on the local Young’s modulus of isotropic composite materials. The method is based on a laser thermooptical method of ultrasound generation combined with measurement of the phase velocity of longitudinal and shear acoustic waves in samples. The main advantage of this method compared with traditional ultrasonic research methods is the efficient generation of short and powerful probing acoustic pulses required for reliable testing of ultrasound absorbing and scattering heterogeneous materials. Using as an example samples of a metal matrix composite with reinforcing microparticles of silicon carbide in various concentrations, it is shown that to provide an effective increase in Young’s modulus with increasing concentration of microparticles, the porosity of the final sample should not exceed 2%.

Keywords: Laser ultrasonic, longitudinal and shear ultrasonic waves, porosity, composite, local elastic moduli.

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35 Effect of Linear Thermal Gradient on Steady-State Creep Behavior of Isotropic Rotating Disc

Authors: Minto Rattan, Tania Bose, Neeraj Chamoli

Abstract:

The present paper investigates the effect of linear thermal gradient on the steady-state creep behavior of rotating isotropic disc using threshold stress based Sherby’s creep law. The composite discs made of aluminum matrix reinforced with silicon carbide particulate has been taken for analysis. The stress and strain rate distributions have been calculated for discs rotating at linear thermal gradation using von Mises’ yield criterion. The material parameters have been estimated by regression fit of the available experimental data. The results are displayed and compared graphically in designer friendly format for the above said temperature profile with the disc operating under uniform temperature profile. It is observed that radial and tangential stresses show minor variation and the strain rates vary significantly in the presence of thermal gradation as compared to disc having uniform temperature.

Keywords: Creep, isotropic, steady-state, thermal gradient.

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34 A Modern Review of the Spintronic Technology: Fundamentals, Materials, Devices, Circuits, Challenges, and Current Research Trends

Authors: Muhibul Haque Bhuyan

Abstract:

Spintronic, also termed spin electronics or spin transport electronics, is a kind of new technology, which exploits the two fundamental degrees of freedom- spin-state and charge-state of electrons to enhance the operational speed for the data storage and transfer efficiency of the device. Thus, it seems an encouraging technology to combat most of the prevailing complications in orthodox electron-based devices. This novel technology possesses the capacity to mix the semiconductor microelectronics and magnetic devices’ functionalities into one integrated circuit. Traditional semiconductor microelectronic devices use only the electronic charge to process the information based on binary numbers, 0 and 1. Due to the incessant shrinking of the transistor size, we are reaching the final limit of 1 nm or so. At this stage, the fabrication and other device operational processes will become challenging as the quantum effect comes into play. In this situation, we should find an alternative future technology, and spintronic may be such technology to transfer and store information. This review article provides a detailed discussion of the spintronic technology: fundamentals, materials, devices, circuits, challenges, and current research trends. At first, the fundamentals of spintronics technology are discussed. Then types, properties, and other issues of the spintronic materials are presented. After that, fabrication and working principles, as well as application areas and advantages/disadvantages of spintronic devices and circuits, are explained. Finally, the current challenges, current research areas, and prospects of spintronic technology are highlighted. This is a new paradigm of electronic cum magnetic devices built on the charge and spin of the electrons. Modern engineering and technological advances in search of new materials for this technology give us hope that this would be a very optimistic technology in the upcoming days.

Keywords: Spintronic technology, spin, charge, magnetic devices, spintronic devices, spintronic materials.

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