S. Zhuiykov and E. Kats
Development of QuasiTwoDimensional Nb2O5 for Functional Electrodes of Advanced Electrochemical Systems
354 - 359
2013
7
6
International Journal of Materials and Metallurgical Engineering
https://publications.waset.org/pdf/1752
https://publications.waset.org/vol/78
World Academy of Science, Engineering and Technology
In recent times there has been a growing interest in the
development of quasitwodimensional niobium pentoxide (Nb2O5)
as a semiconductor for the potential electronic applications such as
capacitors, filtration, dyesensitised solar cells and gas sensing
platforms. Therefore once the purpose is established, Nb2O5 can be
prepared in a number of nano and submicronstructural
morphologies that include rods, wires, belts and tubes. In this study
films of Nb2O5 were prepared on gold plated silicon substrate using
spincoating technique and subsequently by mechanical exfoliation.
The reason this method was employed was to achieve layers of less
than 15nm in thickness. The sintering temperature of the specimen
was 800oC. The morphology and structural characteristics of the
films were analyzed by Atomic Force Microscopy (AFM), Raman
Spectroscopy, Xray Photoelectron Spectroscopy (XPS).
Open Science Index 78, 2013