Influence of Textured Clusters on the Goss Grains Growth in Silicon Steels Consideration of Energy and Mobility
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Influence of Textured Clusters on the Goss Grains Growth in Silicon Steels Consideration of Energy and Mobility

Authors: H. Afer, N. Rouag, R. Penelle

Abstract:

In the Fe-3%Si sheets, grade Hi-B, with AlN and MnS as inhibitors, the Goss grains which abnormally grow do not have a size greater than the average size of the primary matrix. In this heterogeneous microstructure, the size factor is not a required condition for the secondary recrystallization. The onset of the small Goss grain abnormal growth appears to be related to a particular behavior of their grain boundaries, to the local texture and to the distribution of the inhibitors. The presence and the evolution of oriented clusters ensure to the small Goss grains a favorable neighborhood to grow. The modified Monte-Carlo approach, which is applied, considers the local environment of each grain. The grain growth is dependent of its real spatial position; the matrix heterogeneity is then taken into account. The grain growth conditions are considered in the global matrix and in different matrixes corresponding to A component clusters. The grain growth behaviour is considered with introduction of energy only, energy and mobility, energy and mobility and precipitates.

Keywords: Abnormal grain growth, grain boundary energy andmobility, neighbourhood, oriented clusters.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1081997

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