Search results for: double gate PN diode based tunnel field effect transistor

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: CdO, heterojunction semiconductor devices, ideality factor, current-voltage characteristics

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor.

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Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

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The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from I_D-V_G characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: Threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation.

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Authors: Kyung Jin Ryu, MakhsudaJuraeva, Sang-Hyun Jeongand Dong Joo Song

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Clean air in subway station is important to passengers. The Platform Screen Doors (PSDs) can improve indoor air quality in the subway station; however the air quality in the subway tunnel is degraded. The subway tunnel has high CO2 concentration and indoor particulate matter (PM) value. The Indoor Air Quality (IAQ) level in subway environment degrades by increasing the frequency of the train operation and the number of the train. The ventilation systems of the subway tunnel need improvements to have better air-quality. Numerical analyses might be effective tools to analyze the performance of subway twin-track tunnel ventilation systems. An existing subway twin-track tunnel in the metropolitan Seoul subway system is chosen for the numerical simulations. The ANSYS CFX software is used for unsteady computations of the airflow inside the twin-track tunnel when the train moves. The airflow inside the tunnel is simulated when one train runs and two trains run at the same time in the tunnel. The piston-effect inside the tunnel is analyzed when all shafts function as the natural ventilation shaft. The supplied air through the shafts is mixed with the pollutant air in the tunnel. The pollutant air is exhausted by the mechanical ventilation shafts. The supplied and discharged airs are balanced when only one train runs in the twin-track tunnel. The pollutant air in the tunnel is high when two trains run simultaneously in opposite direction and all shafts functioned as the natural shaft cases when there are no electrical power supplies in the shafts. The remained pollutant air inside the tunnel enters into the station platform when the doors are opened.

Keywords: indoor air quality, subway twin-track tunnel, train-induced wind

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Authors: Su Jeong Lee, Tae Il Lee, Jung Han Kim, Chul-Hong Kim, Gee Sung Chae, Jae-Min Myoung

Abstract:

The contact resistance between source/drain electrodes and semiconductor layer is an important parameter affecting electron transporting performance in the thin film transistor (TFT). In this work, we introduced a transparent and the solution prossable single-walled carbon nanotube (SWCNT)/Al-doped ZnO nano particle (AZO NP) bilayer electrodes showing low contact resistance with indium-oxide (In2O3) sol gel thin film. By inserting low work function AZO NPs into the interface between the SWCNTs and the In2O3 which has a high energy barrier, we could obtain an electrical Ohmic contact between them. Finally, with the SWCNT-AZO NP bilayer electrodes, we successfully fabricated a TFT showing a field effect mobility of 5.38 cm2/V·s at 250°C.

Keywords: Single-walled carbon nanotube (SWCNT), Al-doped ZnO (AZO) nanoparticle, contact resistance, Thin-film transistor (TFT).

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Authors: A.H. Akhaveissy

Abstract:

Nonlinear finite element method and Serendipity eight nodes element are used for determining of ground surface settlement due to tunneling. Linear element with elastic behavior is used for modeling of lining. Modified Generalized plasticity model with nonassociated flow rule is applied for analysis of a tunnel in Sao Paulo – Brazil. The tunnel had analyzed by Lades- model with 16 parameters. In this work modified Generalized Plasticity is used with 10 parameters, also Mohr-Coulomb model is used to analysis the tunnel. The results show good agreement with observed results of field data by modified Generalized Plasticity model than other models. The obtained result by Mohr-Coulomb model shows less settlement than other model due to excavation.

Keywords: Non-associated flow rule, Generalized plasticity, tunnel excavation, Excavation method.

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Authors: Yashvir Singh, Mayank Joshi

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A lateral trench-gate power metal-oxide-semiconductor on 4H-SiC is proposed. The device consists of two separate trenches in which two gates are placed on both sides of P-body region resulting two parallel channels. Enhanced current conduction and reduced-surface-field effect in the structure provide substantial improvement in the device performance. Using two dimensional simulations, the performance of proposed device is evaluated and compare of with that of the conventional device for same cell pitch. It is demonstrated that the proposed structure provides two times higher output current, 11% decrease in threshold voltage, 70% improvement in transconductance, 70% reduction in specific ON-resistance, 52% increase in breakdown voltage, and nearly eight time improvement in figure-of-merit over the conventional device.

Keywords: 4H-SiC, lateral, trench-gate, power MOSFET.

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Authors: Priyanka Malik A, Rishu Chaujar B, Mridula Gupta C, R.S. Gupta D

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In this paper, for the first time, a two-dimensional (2D) analytical drain current model for sub-100 nm multi-layered gate material engineered trapezoidal recessed channel (MLGMETRC) MOSFET: a novel design is presented and investigated using ATLAS and DEVEDIT device simulators, to mitigate the large gate leakages and increased standby power consumption that arise due to continued scaling of SiO2-based gate dielectrics. The twodimensional (2D) analytical model based on solution of Poisson-s equation in cylindrical coordinates, utilizing the cylindrical approximation, has been developed which evaluate the surface potential, electric field, drain current, switching metric: ION/IOFF ratio and transconductance for the proposed design. A good agreement between the model predictions and device simulation results is obtained, verifying the accuracy of the proposed analytical model.

Keywords: ATLAS, DEVEDIT, NJD, MLGME- TRCMOSFET.

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Authors: N.Subramanian, U.K.Misra

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The precise form of tensorial transformations acting on a given collection of infinite matrices into another ; for such classical ideas connected with the summability field of double gai sequence spaces. In this paper the results are impose conditions on the tensor g so that it becomes a tensorial transformations from the metric space χ2 to the metric space C

Keywords: tensorial transformations, double gai sequences , double analytic, dual.

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Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, V. S. Tripathi, Shivesh Tripathi

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A frequency reconfigurable multiband antenna for intelligent transportation system (ITS) applications is proposed in this paper. A PIN-diode is used for reconfigurability. Centre frequencies are 1.38, 1.98, 2.89, 3.86, and 4.34 GHz in “ON” state of Diode and 1.56, 2.16, 2.88, 3.91 and 4.45 GHz in “OFF” state. Achieved maximum bandwidth is 18%. The maximum gain of the proposed antenna is 2.7 dBi in “ON” state and 3.95 dBi in “OFF” state of the diode. The antenna is simulated, fabricated, and tested in the lab. Measured and simulated results are in good confirmation.

Keywords: ITS, multiband antenna, PIN-diode, reconfigurable.

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Authors: A. Douara, N. Kermas, B. Djellouli

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In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.

Keywords: AlGaN/GaN, centroid capacitance, gate capacitance, HEMT, quantum capacitance.

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Authors: Kariyappa B. S., Hariprasad S. A., R. Nagaraj

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In this paper, a new method of controlling position of AC Servomotor using Field Programmable Gate Array (FPGA). FPGA controller is used to generate direction and the number of pulses required to rotate for a given angle. Pulses are sent as a square wave, the number of pulses determines the angle of rotation and frequency of square wave determines the speed of rotation. The proposed control scheme has been realized using XILINX FPGA SPARTAN XC3S400 and tested using MUMA012PIS model Alternating Current (AC) servomotor. Experimental results show that the position of the AC Servo motor can be controlled effectively. KeywordsAlternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

Keywords: Alternating Current (AC), Field Programmable Gate Array (FPGA), Liquid Crystal Display (LCD).

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Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: Complementary common gate, complementary regulated cascode, current mirror, floating active resistors.

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Authors: K. Jabeur, L. D. Buda-Prejbeanu, G. Prenat, G. Di Pendina

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MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. While a growing interest is given to two-terminal Magnetic Tunnel Junctions (MTJ) based on Spin-Transfer Torque (STT) switching as the potential candidate for a universal memory, its reliability is dramatically decreased because of the common writing/reading path. Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach revitalizes the hope of an ideal MRAM. It can overcome the reliability barrier encountered in current two-terminal MTJs by separating the reading and the writing path. In this paper, we study two possible writing schemes for the SOT-MTJ device based on recently fabricated samples. While the first is based on precessional switching, the second requires the presence of permanent magnetic field. Based on an accurate Verilog-A model, we simulate the two writing techniques and we highlight advantages and drawbacks of each one. Using the second technique, pioneering logic circuits based on the three-terminal architecture of the SOT-MTJ described in this work are under development with preliminary attractive results.

Keywords: Spin orbit Torque, Magnetic Tunnel Junction, MRAM, Spintronic, Circuit simulation.

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Authors: Muhibul Haque Bhuyan

Abstract:

This paper reports on the impact study with the variation of the gate insulation material and thickness on different models of pocket implanted sub-100 nm n-MOS device. The gate materials used here are silicon dioxide (SiO₂), aluminum silicate (Al₂SiO₅), silicon nitride (Si₃N₄), alumina (Al₂O₃), hafnium silicate (HfSiO₄), tantalum pentoxide (Ta₂O₅), hafnium dioxide (HfO₂), zirconium dioxide (ZrO₂), and lanthanum oxide (La₂O₃) upon a p-type silicon substrate material. The gate insulation thickness was varied from 2.0 nm to 3.5 nm for a 50 nm channel length pocket implanted n-MOSFET. There are several models available for this device. We have studied and simulated threshold voltage model incorporating drain and substrate bias effects, surface potential, inversion layer charge, pinch-off voltage, effective electric field, inversion layer mobility, and subthreshold drain current models based on two linear symmetric pocket doping profiles. We have changed the values of the two parameters, viz. gate insulation material and thickness gradually fixing the other parameter at their typical values. Then we compared and analyzed the simulation results. This study would be helpful for the nano-scaled MOS device designers for various applications to predict the device behavior.

Keywords: Linear symmetric pocket profile, pocket implanted n-MOS Device, model, impact of gate material, insulator thickness.

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Authors: Li Hao, Yan Zhang, Jingan Cui

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The Eulerian numerical method is proposed to analyze the explosion in tunnel. Based on this method, an original software M-MMIC2D is developed by Cµ program language. With this software, the explosion problem in the tunnel with three expansion-chambers is numerically simulated, and the results are found to be in full agreement with the observed experimental data.

Keywords: Eulerian method, numerical simulation, shock wave, tunnel

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Authors: Thana Ananacha

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This paper reports the numerical and experimental performances of Double Glass Wall are investigated. Two configurations were considered namely, the Double Clear Glass Wall (DCGW) and the Double Translucent Glass Wall (DTGW). The coupled governing equations as well as boundary conditions are solved using the finite element method (FEM) via COMSOLTM Multiphysics. Temperature profiles and flow field of the DCGW and DTGW are reported and discussed. Different constant heat fluxes were considered as 400 and 800 W.m-2 the corresponding initial condition temperatures were 30.5 and 38.5ºC respectively. The results show that the simulation results are in agreement with the experimental data. Conclusively, the model considered in this study could reasonable be used simulate the thermal and ventilation performance of the DCGW and DTGW configurations.

Keywords: Thermal simulation, Double Glass Wall, Velocity field.

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Authors: C. Sanchis-Borras, J. M. Molina-Garcia-Pardo, P. Degauque, M. Lienard

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The objective of this contribution is to study the performances in terms of bit error rate, of space-time code algorithms applied to MIMO communication in tunnels. Indeed, the channel characteristics in a tunnel are quite different than those of urban or indoor environment, due to the guiding effect of the tunnel. Therefore, MIMO channel matrices have been measured in a straight tunnel, in a frequency band around 3GHz. Correlation between array elements and properties of the MIMO matrices are first studied as a function of the distance between the transmitter and the receiver. Then, owing to a software tool simulating the link, predicted values of bit error rate are given for VLAST, OSTBC and QSTBC algorithms applied to a MIMO configuration with 2 or 4 array elements. Results are interpreted from the analysis of the channel properties.

Keywords: MIMO, propagation channel, space-time algorithms, tunnel.

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Authors: Haruo Shimada, Akinori Kanasugi

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This paper proposes an architecture of dynamically reconfigurable arithmetic circuit. Dynamic reconfiguration is a technique to realize required functions by changing hardware construction during operations. The proposed circuit is based on a complex number multiply-accumulation circuit which is used frequently in the field of digital signal processing. In addition, the proposed circuit performs real number double precision arithmetic operations. The data formats are single and double precision floating point number based on IEEE754. The proposed circuit is designed using VHDL, and verified the correct operation by simulations and experiments.

Keywords: arithmetic circuit, complex number, double precision, dynamic reconfiguration

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Authors: Rajesh Mehra, Bharti Thakur

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In this paper, an Infinite Impulse Response (IIR) filter has been designed and simulated on an Field Programmable Gate Arrays (FPGA). The implementation is based on Multiply Add and Accumulate (MAC) algorithm which uses multiply operations for design implementation. Parallel Pipelined structure is used to implement the proposed IIR Filter taking optimal advantage of the look up table of target device. The designed filter has been synthesized on Digital Signal Processor (DSP) slice based FPGA to perform multiplier function of MAC unit. The DSP slices are useful to enhance the speed performance. The proposed design is simulated with Matlab, synthesized with Xilinx Synthesis Tool, and implemented on FPGA devices. The Virtex 5 FPGA based design can operate at an estimated frequency of 81.5 MHz as compared to 40.5 MHz in case of Spartan 3 ADSP based design. The Virtex 5 based implementation also consumes less slices and slice flip flops of target FPGA in comparison to Spartan 3 ADSP based implementation to provide cost effective solution for signal processing applications.

Keywords: Butterworth, DSP, IIR, MAC, FPGA.

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Authors: R. A. Karim, N. M. A. Ghani, N. N. S. Nasari

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Wastages such as grated coconut meat, spent tea and used sugarcane had contributed negative impacts to the environment. Vermicomposting method is fully utilized to manage the wastes towards a more sustainable approach. The worms that are used in the vermicomposting are Eisenia foetida and Eudrillus euginae. This research shows that the vermicompost of wastages has voltage of electrical energy and is able to light up the Light-Emitting Diode (LED) device. Based on the experiment, the use of replicated and double compartments of the component will produce double of voltage. Hence, for conclusion, this harmless and low cost technology of vermicompost can act as a dry cell in order to reduce the usage of hazardous chemicals that can contaminate the environment.

Keywords: Wastages, vermiconpose, worm, voltage, organic cell.

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Authors: M. Raciti Castelli, S. Mogno, S. Giacometti, E. Benini

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A boundary layer wind tunnel facility has been adopted in order to conduct experimental measurements of the flow field around a model of the Panorama Giustinelli Building, Trieste (Italy). Information on the main flow structures has been obtained by means of flow visualization techniques and has been compared to the numerical predictions of the vortical structures spread on top of the roof, in order to investigate the optimal positioning for a vertical-axis wind energy conversion system, registering a good agreement between experimental measurements and numerical predictions.

Keywords: Boundary layer wind tunnel, flow around buildings, atmospheric flow field, vertical-axis wind turbine (VAWT).

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Authors: E. Farsad, S. P. Abbasi, A. Goodarzi, M. S. Zabihi

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Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particularly for medical applications.

Keywords: diode laser, experimentally, temperature, wavelength

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Authors: Alexey V. Klyuev, Arkady V. Yakimov, Mikhail I. Ryzhkin, Andrey V. Klyuev

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Fluctuations of Schottky diode parameters in a structure of the mixer are investigated. These fluctuations are manifested in two ways. At the first, they lead to fluctuations in the transfer factor that is lead to the amplitude fluctuations in the signal of intermediate frequency. On the basis of the measurement data of 1/f noise of the diode at forward current, the estimation of a spectrum of relative fluctuations in transfer factor of the mixer is executed. Current dependence of the spectrum of relative fluctuations in transfer factor of the mixer and dependence of the spectrum of relative fluctuations in transfer factor of the mixer on the amplitude of the heterodyne signal are investigated. At the second, fluctuations in parameters of the diode lead to occurrence of 1/f noise in the output signal of the mixer. This noise limits the sensitivity of the mixer to the value of received signal.

Keywords: Current-voltage characteristic, fluctuations, mixer, Schottky diode, 1/f noise.

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Authors: B. J. C. Horsten, L. L. M. Veldhuis

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Because support interference corrections are not properly understood, engineers mostly rely on expensive dummy measurements or CFD calculations. This paper presents a method based on uncorrected wind tunnel measurements and fast calculation techniques (it is a hybrid method) to calculate wall interference, support interference and residual interference (when e.g. a support member closely approaches the wind tunnel walls) for any type of wind tunnel and support configuration. The method provides with a simple formula for the calculation of the interference gradient. This gradient is based on the uncorrected measurements and a successive calculation of the slopes of the interference-free aerodynamic coefficients. For the latter purpose a new vortex-lattice routine is developed that corrects the slopes for viscous effects. A test case of a measurement on a wing proves the value of this hybrid method as trends and orders of magnitudes of the interference are correctly determined.

Keywords: Hybrid method, support interference, wall interference, wind tunnel corrections.

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Authors: Wei Zhang

Abstract:

With the rapid development of deep learning, neural network and deep learning algorithms play a significant role in various practical applications. Due to the high accuracy and good performance, Convolutional Neural Networks (CNNs) especially have become a research hot spot in the past few years. However, the size of the networks becomes increasingly large scale due to the demands of the practical applications, which poses a significant challenge to construct a high-performance implementation of deep learning neural networks. Meanwhile, many of these application scenarios also have strict requirements on the performance and low-power consumption of hardware devices. Therefore, it is particularly critical to choose a moderate computing platform for hardware acceleration of CNNs. This article aimed to survey the recent advance in Field Programmable Gate Array (FPGA)-based acceleration of CNNs. Various designs and implementations of the accelerator based on FPGA under different devices and network models are overviewed, and the versions of Graphic Processing Units (GPUs), Application Specific Integrated Circuits (ASICs) and Digital Signal Processors (DSPs) are compared to present our own critical analysis and comments. Finally, we give a discussion on different perspectives of these acceleration and optimization methods on FPGA platforms to further explore the opportunities and challenges for future research. More helpfully, we give a prospect for future development of the FPGA-based accelerator.

Keywords: Deep learning, field programmable gate array, FPGA, hardware acceleration, convolutional neural networks, CNN.

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Authors: Rishikesh Pandey, Maneesha Gupta

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A new low-voltage floating gate MOSFET (FGMOS) based squarer using square law characteristic of the FGMOS is proposed in this paper. The major advantages of the squarer are simplicity, rail-to-rail input dynamic range, low total harmonic distortion, and low power consumption. The proposed circuit is biased without body effect. The circuit is designed and simulated using SPICE in 0.25μm CMOS technology. The squarer is operated at the supply voltages of ±0.75V . The total harmonic distortion (THD) for the input signal 0.75Vpp at 25 KHz, and maximum power consumption were found to be less than 1% and 319μW respectively.

Keywords: Analog signal processing, floating gate MOSFETs, low-voltage, Spice, squarer.

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Authors: M. S. Thakur, Mohit Shukla

Abstract:

A channel/tunnel, which carries the water to the penstock/pressure shaft is called headrace tunnel (HRT). It is necessary to know the general topography, geology of the area, state of stress and other mechanical properties of the strata. For this certain topographical and geological investigations, in-situ and laboratory tests, and observations are required to be done. These investigations play an important role in a tunnel design as these help in deciding the optimum layout, shape and size and support requirements of the tunnel. The paper includes inputs from Nathpa Jhakri Hydeoelectric project which is India’s highest capacity (1500 MW) operating hydroelectric project. The paper would help the design engineers with various new concepts and preparedness against geological surprises.

Keywords: Tunnelling, geology, head race tunnel, rockmass.

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Authors: Dzmitry M. Kabanau, Vladimir V. Kabanov, Yahor V. Lebiadok, Denis V. Shabrov, Pavel V. Shpak, Gevork T. Mikaelyan, Alexandr P. Bunichev

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This article is deal with the experimental investigations of the laser diode matrixes (LDM) based on the AlGaAs/GaAs heterostructures (lasing wavelength 790-880 nm) to find optimal LDM parameters for active vision systems. In particular, the dependence of LDM radiation pulse power on the pulse duration and LDA active layer heating as well as the LDM radiation divergence are discussed.

Keywords: Active vision systems, laser diode matrixes, thermal properties, radiation divergence.

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Authors: A. Ahmadi Nadooshan, S. Daneshmand, C. Aghanajafi

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Traditionally, wind tunnel models are made of metal and are very expensive. In these years, everyone is looking for ways to do more with less. Under the right test conditions, a rapid prototype part could be tested in a wind tunnel. Using rapid prototype manufacturing techniques and materials in this way significantly reduces time and cost of production of wind tunnel models. This study was done of fused deposition modeling (FDM) and their ability to make components for wind tunnel models in a timely and cost effective manner. This paper discusses the application of wind tunnel model configuration constructed using FDM for transonic wind tunnel testing. A study was undertaken comparing a rapid prototyping model constructed of FDM Technologies using polycarbonate to that of a standard machined steel model. Testing covered the Mach range of Mach 0.3 to Mach 0.75 at an angle-ofattack range of - 2° to +12°. Results from this study show relatively good agreement between the two models and rapid prototyping Method reduces time and cost of production of wind tunnel models. It can be concluded from this study that wind tunnel models constructed using rapid prototyping method and materials can be used in wind tunnel testing for initial baseline aerodynamic database development.

Keywords: Polycarbonate, Fabrication, FDM, Model, RapidPrototyping, Wind Tunnel.

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