@article{(Open Science Index):https://publications.waset.org/pdf/10004147,
	  title     = {Capacitance Models of AlGaN/GaN High Electron Mobility Transistors},
	  author    = {A. Douara and  N. Kermas and  B. Djellouli},
	  country	= {},
	  institution	= {},
	  abstract     = {In this study, we report calculations of gate capacitance of AlGaN/GaN HEMTs with nextnano device simulation software. We have used a physical gate capacitance model for III-V FETs that incorporates quantum capacitance and centroid capacitance in the channel. These simulations explore various device structures with different values of barrier thickness and channel thickness. A detailed understanding of the impact of gate capacitance in HEMTs will allow us to determine their role in future 10 nm physical gate length node.
},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {10},
	  number    = {3},
	  year      = {2016},
	  pages     = {420 - 423},
	  ee        = {https://publications.waset.org/pdf/10004147},
	  url   	= {https://publications.waset.org/vol/111},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 111, 2016},
	}