A. Douara and  N. Kermas and  B. Djellouli,  Capacitance Models of AlGaN/GaN High Electron Mobility Transistors.   journal   = {International Journal of Nuclear and Quantum Engineering}, [online]. World Academy of Science, Engineering and Technology.
    February 2016, vol. 111(3). 420 - 423
    [viewed 02 May 2024]. Available from: https://publications.waset.org/pdf/10004147.