@article{(Open Science Index):https://publications.waset.org/pdf/16146,
	  title     = {Study of Two Writing Schemes for a Magnetic Tunnel Junction Based On Spin Orbit Torque},
	  author    = {K. Jabeur and  L. D. Buda-Prejbeanu and  G. Prenat and  G. Di Pendina},
	  country	= {},
	  institution	= {},
	  abstract     = {MRAM technology provides a combination of fast
access time, non-volatility, data retention and endurance. While a
growing interest is given to two-terminal Magnetic Tunnel Junctions
(MTJ) based on Spin-Transfer Torque (STT) switching as the
potential candidate for a universal memory, its reliability is
dramatically decreased because of the common writing/reading path.
Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach
revitalizes the hope of an ideal MRAM. It can overcome the
reliability barrier encountered in current two-terminal MTJs by
separating the reading and the writing path. In this paper, we study
two possible writing schemes for the SOT-MTJ device based on
recently fabricated samples. While the first is based on precessional
switching, the second requires the presence of permanent magnetic
field. Based on an accurate Verilog-A model, we simulate the two
writing techniques and we highlight advantages and drawbacks of
each one. Using the second technique, pioneering logic circuits based
on the three-terminal architecture of the SOT-MTJ described in this
work are under development with preliminary attractive results.
},
	    journal   = {International Journal of Electrical and Computer Engineering},
	  volume    = {7},
	  number    = {8},
	  year      = {2013},
	  pages     = {1054 - 1059},
	  ee        = {https://publications.waset.org/pdf/16146},
	  url   	= {https://publications.waset.org/vol/80},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 80, 2013},
	}