Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 30382
Electrical Properties of n-CdO/p-Si Heterojunction Diode Fabricated by Sol Gel

Authors: S.Aksoy, Y.Caglar

Abstract:

n-CdO/p-Si heterojunction diode was fabricated using sol-gel spin coating technique which is a low cost and easily scalable method for preparing of semiconductor films. The structural and morphological properties of CdO film were investigated. The X-ray diffraction (XRD) spectra indicated that the film was of polycrystalline nature. The scanning electron microscopy (SEM) images indicate that the surface morphology CdO film consists of the clusters formed with the coming together of the nanoparticles. The electrical characterization of Au/n-CdO/p–Si/Al heterojunction diode was investigated by current-voltage. The ideality factor of the diode was found to be 3.02 for room temperature. The reverse current of the diode strongly increased with illumination intensity of 100 mWcm-2 and the diode gave a maximum open circuit voltage Voc of 0.04 V and short-circuits current Isc of 9.92×10-9 A.

Keywords: current-voltage characteristics, CdO, heterojunction semiconductor devices, ideality factor

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1058793

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1938

References:


[1] Zhao Z., Morel D. L. and Ferekides C. S. "Electrical and optical properties of tin-doped CdO films deposited by atmospheric metalorganic chemical vapor deposition," Thin Solid Films, vol. 413, 2002, pp. 203-211.
[2] Su L. M., Grote N. and Schmitt F. "Diffused planar InP bipolar transistor with a cadmium oxide film emitter" Electron. Lett., vol. 20, 1984, pp. 716-717.
[3] Gomez Daza O., Arias-Carbajal Readigos A., Campos J., Nair M. T. S. and Nair P. K. "Formation of Conductive CdO Thin Films on Photoconductive CdS Thin films for Window Layer Applications in Solar Cells" Mod. Phys. Lett. B, vol. 17, 2001, pp. 609-612.
[4] Yan M., Lane M., Kannewurf C. R. and Chang R. P. H. "Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition" Appl. Phys. Lett., vol.78, 2001,pp. 02342.
[5] Siraj K., Khaleeq-ur-Rahman M., Hussain S.I., Rafique M.S., Anjum S. "Effect of deposition temperature on structural, surface, optical and magnetic properties of pulsed laser deposited Al-doped CdO thin films," J. Alloy Compd., vol. 509, 2011, pp. 6756-6762.
[6] Saha B., Thapa R., Chattopadhyay K.K. "Wide range tuning of electrical conductivity of RF sputtered CdO thin films through oxygen partial pressure variation," Sol. Energ. Mat.Sol. C., vol. 92, 2008, pp. 1077-1080.
[7] Zhao Z., Morel D.L., Ferekides C.S. "Electrical and optical properties of tin-doped CdO films deposited by atmospheric metalorganic chemical vapor deposition," Thin Solid Films, vol. 413, 2002, pp. 203- 211.
[8] Eze F.C., "Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process," Mater. Chem. Phys., vol. 89, 2005, pp. 205-209.
[9] Vigil O., Cruz F., Morales-Acevedo A., Contreras-Puente G., Vaillant L., Santana G. "Structural and optical properties of annealed CdO thin films prepared by spray pyrolysis," Mater. Chem. Phys, vol. 68, 2001, pp.249-252.
[10] Aksoy S., Caglar Y., Ilican S., Caglar M., "Effect of heat treatment on physical properties of CdO films deposited by sol-gel method," Int. J. Hydrogen Energy, vol. 34, 2009, pp. 5191-5195.
[11] Yakuphanoglu F., "Nanocluster n-CdO thin film by sol-gel for solar cell applications,", Appl. Surf. Sci., vol. 257, 2010, pp. 1413-1419.
[12] Ilican S., Caglar M., Caglar Y., Yakuphanoglu F., "CdO:Al films deposited by sol-gel process: a study on their structural and optical properties,", vol. 3, 2009, pp. 135-140.
[13] Barret C.S., Massalski T.B., Structure of Metals, Pergamon Press, Oxford, 1980.
[14] Cullity B. D., Stock S. R. "Elements of X-Ray Diffraction" 3rd ed., Englewood Cliffs, NJ: Prentice Hall, 2001.
[15] Sze S.M., "Physics of Semiconductor Devices", 2nd ed., Wiley, New York, 1981.
[16] Norde H., "A modified forward IÔÇÉV plot for Schottky diodes with high series resistance", J. Appl. Phys., pp.50, 5052, 1979.