%0 Journal Article
	%A K. Jabeur and  L. D. Buda-Prejbeanu and  G. Prenat and  G. Di Pendina
	%D 2013
	%J International Journal of Electrical and Computer Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 80, 2013
	%T Study of Two Writing Schemes for a Magnetic Tunnel Junction Based On Spin Orbit Torque
	%U https://publications.waset.org/pdf/16146
	%V 80
	%X MRAM technology provides a combination of fast
access time, non-volatility, data retention and endurance. While a
growing interest is given to two-terminal Magnetic Tunnel Junctions
(MTJ) based on Spin-Transfer Torque (STT) switching as the
potential candidate for a universal memory, its reliability is
dramatically decreased because of the common writing/reading path.
Three-terminal MTJ based on Spin-Orbit Torque (SOT) approach
revitalizes the hope of an ideal MRAM. It can overcome the
reliability barrier encountered in current two-terminal MTJs by
separating the reading and the writing path. In this paper, we study
two possible writing schemes for the SOT-MTJ device based on
recently fabricated samples. While the first is based on precessional
switching, the second requires the presence of permanent magnetic
field. Based on an accurate Verilog-A model, we simulate the two
writing techniques and we highlight advantages and drawbacks of
each one. Using the second technique, pioneering logic circuits based
on the three-terminal architecture of the SOT-MTJ described in this
work are under development with preliminary attractive results.

	%P 1054 - 1059