Search results for: Transistor laser

Authors: Mohammad Hosseini

Abstract:

Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance-free optical frequency response with -3 dB bandwidth of more than 26 GHz has been achieved for a single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) in the left side of quantum well and AlξGa1-ξAs (ξ: 0.05→0) in the right side of quantum well. All required parameters, including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime, have been calculated using a self-consistent charge control model.

Keywords: Transistor laser, ultrafast, GRIN-SCH, -3db optical bandwidth, AlξGa1-ξAs.

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Authors: Shubhajit Roy Chowdhury, Aritra Banerjee, Aniruddha Roy, Hiranmay Saha

Abstract:

The paper proposes the novel design of a 3T XOR gate combining complementary CMOS with pass transistor logic. The design has been compared with earlier proposed 4T and 6T XOR gates and a significant improvement in silicon area and power-delay product has been obtained. An eight transistor full adder has been designed using the proposed three-transistor XOR gate and its performance has been investigated using 0.15um and 0.35um technologies. Compared to the earlier designed 10 transistor full adder, the proposed adder shows a significant improvement in silicon area and power delay product. The whole simulation has been carried out using HSPICE.

Keywords: XOR gate, full adder, improvement in speed, area minimization, transistor count minimization.

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Authors: Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

Abstract:

As application of re-activation of backside on power device Insulated Gate Bipolar Transistor (IGBT), laser annealing was employed to irradiate amorphous silicon substrate, and resistivities were measured using four point probe measurement. For annealing the amorphous silicon two lasers were used at wavelength of visible green (532 nm) together with Infrared (793 nm). While the green laser efficiently increased temperature at top surface the Infrared laser reached more deep inside and was effective for melting the top surface. A finite element method was employed to evaluate time dependent thermal distribution in silicon substrate.

Keywords: laser, annealing, silicon, recrystallization, thermal distribution, resistivity, finite element method, absorption, melting point, latent heat of fusion.

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Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: Semiconductors, digital electronics, double pass transistor technology, Full adder, fault tolerance.

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Authors: Subal Kar, Madhuja Ghosh, Soumik Das, Antara Saha

Abstract:

A novel technique has been developed to generate ultra-stable millimeter-wave signal by optical heterodyning of the output from two slave laser (SL) sources injection-locked to the sidebands of a frequency modulated (FM) master laser (ML). Precise thermal tuning of the SL sources is required to lock the particular slave laser frequency to the desired FM sidebands of the ML. The output signals from the injection-locked SL when coherently heterodyned in a fast response photo detector like high electron mobility transistor (HEMT), extremely stable millimeter-wave signal having very narrow line width can be generated. The scheme may also be used to generate ultra-stable sub-millimeter-wave/terahertz signal.

Keywords: FM sideband injection locking, Master-Slave injection locking, Millimetre-wave signal generation and Optical heterodyning.

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Authors: A. Emre Ozturk, Ergun Ercelebi

Abstract:

Autonomous robotic systems need an equipment like a human eye for their movement. In this study a 3D laser scanner has been designed and implemented for those autonomous robotic systems. In general 3D laser scanners are using 2 dimension laser range finders that are moving on one-axis (1D) to generate the model. In this study, the model has been obtained by a one-dimensional laser range finder that is moving in two –axis (2D) and because of this the laser scanner has been produced cheaper.

Keywords: 3D Laser Scanner, embedded systems.

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Authors: Esther T. Akinlabi, Mukul Shukla, Stephen A. Akinlabi

Abstract:

Laser beam forming is a novel technique developed for the joining of metallic components. In this study, an overview of the laser beam forming process, areas of application, the basic mechanisms of the laser beam forming process, some recent research studies and the need to focus more research effort on improving the laser-material interaction of laser beam forming of titanium and its alloys are presented.

Keywords: Aerospace, Deformation, Laser forming, Mechanisms, Titanium, Titanium alloy.

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Authors: Syed Sohail Abbas, Sergei Popov

Abstract:

In this paper, a fibre laser at 546 nm has been studied for a signal power of -30 dB. Er3+-doped ZBLAN fibre has been used by upconversion pumping of a 980 nm laser diode. Gain saturation effect has been investigated in detail. Laser performance has also been discussed. An efficiency of 35% has been calculated with a length of 5 mm fibre laser. Results show that Er3+-doped ZBLAN is a promising candidate for optical amplification at 546 nm.

Keywords: Compact visible lasers, Erbium doped, Gainsaturation, Green laser, Optical fibre lasers

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Authors: Akash Rathee, Harish Parthasarathy

Abstract:

In this paper, a frequency-variation based method has been proposed for transistor parameter estimation in a commonemitter transistor amplifier circuit. We design an algorithm to estimate the transistor parameters, based on noisy measurements of the output voltage when the input voltage is a sine wave of variable frequency and constant amplitude. The common emitter amplifier circuit has been modelled using the transistor Ebers-Moll equations and the perturbation technique has been used for separating the linear and nonlinear parts of the Ebers-Moll equations. This model of the amplifier has been used to determine the amplitude of the output sinusoid as a function of the frequency and the parameter vector. Then, applying the proposed method to the frequency components, the transistor parameters have been estimated. As compared to the conventional time-domain least squares method, the proposed method requires much less data storage and it results in more accurate parameter estimation, as it exploits the information in the time and frequency domain, simultaneously. The proposed method can be utilized for parameter estimation of an analog device in its operating range of frequencies, as it uses data collected from different frequencies output signals for parameter estimation.

Keywords: Perturbation Technique, Parameter estimation, frequency-variation based method.

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Authors: Iliycho P. Iliev, Desislava S. Voynikova, Snezhana G. Gocheva-Ilieva

Abstract:

This paper examines the available experiment data for a copper bromide vapor laser (CuBr laser), emitting at two wavelengths - 510.6 and 578.2nm. Laser output power is estimated based on 10 independent input physical parameters. A classification and regression tree (CART) model is obtained which describes 97% of data. The resulting binary CART tree specifies which input parameters influence considerably each of the classification groups. This allows for a technical assessment that indicates which of these are the most significant for the manufacture and operation of the type of laser under consideration. The predicted values of the laser output power are also obtained depending on classification. This aids the design and development processes considerably.

Keywords: Classification and regression trees (CART), Copper Bromide laser (CuBr laser), laser generation, nonparametric statistical model.

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Authors: Spyridon Nikolaidis

Abstract:

A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, Inverter modeling, transistor current model, timing model.

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Authors: Hardik Vaghela, Mamta Khosla, Balwindar Raj

Abstract:

In this paper, we present and investigate a double gate PN diode based tunnel field effect transistor (DGPNTFET). The importance of proposed structure is that the formation of different drain doping is not required and ambipolar effect in OFF state is completely removed for this structure. Validation of this structure to behave like a Tunnel Field Effect Transistor (TFET) is carried out through energy band diagrams and transfer characteristics. Simulated result shows point subthreshold slope (SS) of 19.14 mV/decade and ON to OFF current ratio (I_ON / I_OFF) of 2.66 × 10¹⁴ (I_ON at V_GS=1.5V, V_DS=1V and I_OFF at V_GS=0V, V_DS=1V) for gate length of 20nm and HfO₂ as gate oxide at room temperature. Which indicate that the DGPNTFET is a promising candidate for nano-scale, ambipolar free switch.

Keywords: Ambipolar effect, double gate PN diode based tunnel field effect transistor, high-κ dielectric material, subthreshold slope, tunnel field effect transistor.

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Authors: Suvradip Mullick, Yuvraj K. Madhukar, Subhranshu Roy, Ashish K. Nath

Abstract:

We present the development of a new underwater laser cutting process in which a water-jet has been used along with the laser beam to remove the molten material through kerf. The conventional underwater laser cutting usually utilizes a high pressure gas jet along with laser beam to create a dry condition in the cutting zone and also to eject out the molten material. This causes a lot of gas bubbles and turbulence in water, and produces aerosols and waste gas. This may cause contamination in the surrounding atmosphere while cutting radioactive components like burnt nuclear fuel. The water-jet assisted underwater laser cutting process produces much less turbulence and aerosols in the atmosphere. Some amount of water vapor bubbles is formed at the laser-metal-water interface; however, they tend to condense as they rise up through the surrounding water. We present the design and development of a water-jet assisted underwater laser cutting head and the parametric study of the cutting of AISI 304 stainless steel sheets with a 2 kW CW fiber laser. The cutting performance is similar to that of the gas assist laser cutting; however, the process efficiency is reduced due to heat convection by water-jet and laser beam scattering by vapor. This process may be attractive for underwater cutting of nuclear reactor components.

Keywords: Laser, underwater cutting, water-jet.

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Authors: M.A. Calin, S.V. Parasca, M.R. Calin, D. Savastru, D. Manea

Abstract:

The goal of this paper is to examine the effects of laser radiation on the skin wound healing using infrared thermography as non-invasive method for the monitoring of the skin temperature changes during laser treatment. Thirty Wistar rats were used in this study. A skin lesion was performed at the leg on all rats. The animals were exposed to laser radiation (λ = 670 nm, P = 15 mW, DP = 16.31 mW/cm2) for 600 s. Thermal images of wound were acquired before and after laser irradiation. The results have demonstrated that the tissue temperature decreases from 35.5±0.50°C in the first treatment day to 31.3±0.42°C after the third treatment day. This value is close to the normal value of the skin temperature and indicates the end of the skin repair process. In conclusion, the improvements in the wound healing following exposure to laser radiation have been revealed by infrared thermography.

Keywords: skin, wound, laser, thermal image

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Authors: K. Kalaiselvan, A. Elango, N. M. Nagarajan, N. Mathiyazagan

Abstract:

Laser beam welding has wide acceptability due to least welding distortion, low labour costs and convenient operation. However, laser welding for dissimilar titanium and aluminium alloys is a new area which is having wider applications in aerospace, aircraft, automotive, electronics and other industries. The present study is concerned with welding parameters namely laser power, welding speed, focusing distance and type of shielding gas and thereby evaluate welding performance of titanium and aluminium alloy thin sheets. This paper reviews the basic concepts associated with different parameters of Ti/Al sheet joint using Laser beam welding.

Keywords: Laser Beam Welding (LBW), Dissimilar joining Titanium and Aluminum sheets.

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

Abstract:

In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: M. Hassani, Y. Hassani, N. Ajudanioskooei, N. N. Benvid

Abstract:

Laser Forming process as a non-contact thermal forming process is widely used to forming and bending of metallic and non-metallic sheets. In this process, according to laser irradiation along a specific path, sheet is bent. One of the most important output parameters in laser forming is bending angle that depends on process parameters such as physical and mechanical properties of materials, laser power, laser travel speed and the number of scan passes. In this paper, Artificial Neural Network and Fuzzy Logic System were used to predict of bending angle in laser forming process. Inputs to these models were laser travel speed and laser power. The comparison between artificial neural network and fuzzy logic models with experimental results has been shown both of these models have high ability to prediction of bending angles with minimum errors.

Keywords: Artificial neural network, bending angle, fuzzy logic, laser forming.

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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Authors: Jae-Hong Kwon, Myung-Ho Chung, Tae-Yeon Oh, Hyeon-Seok Bae, Byeong-Kwon Ju

Abstract:

End-substitution of quarterthiophene and sexithiophene with hexyl groups leads to highly soluble conjugated oligomers,DZ-dihexylquarterthiophene (DH-4T) and DZ-dihexylsexithiophene (DH-6T). We have characterized these oligomers for optical and electrical properties. We fabricated an organic thin film transistor (OTFT) using the above two air-stable p-type organic semiconductor materials. We obtained a stable characteristic curve. The field effect mobility, Pwas calculated to be 3.2910-4 cm2/Vs for DH-6T based OTFT; while the DH-4T based OTFT had 1.8810-5 cm2/Vs.KeywordsOrganic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

Keywords: Organic thin film transistor, DZ-dihexylquarterthiophene, DZ-dihexylsexithiophene.

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Authors: F.Agalianos, S.Patelis , P. Kyratsis, E. Maravelakis, E.Vasarmidis, A.Antoniadis

Abstract:

Laser engraving is a manufacturing method for those applications where previously Electrical Discharge Machining (EDM) was the only choice. Laser engraving technology removes material layer-by-layer and the thickness of layers is usually in the range of few microns. The aim of the present work is to investigate the influence of the process parameters on the surface quality when machined by laser engraving. The examined parameters were: the pulse frequency, the beam speed and the layer thickness. The surface quality was determined by the surface roughness for every set of parameters. Experimental results on Al7075 material showed that the surface roughness strictly depends on the process parameters used.

Keywords: Laser engraving, Al7075, Yb: YAG laser, laser process parameters, material roughness.

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Authors: Y. J. Chen, T. M. Yue, Z. N. Guo

Abstract:

This paper reports the effects of laser energy on the characteristics of bubbles generated in the weld zone and the formation of new chemical bonds at the Polyethylene Terephthalate (PET)/Ti joint interface in laser joining of PET to Ti. The samples were produced by using different laser energies ranging from 1.5 J – 6 J in steps of 1.5 J, while all other joining parameters remained unchanged. The types of chemical bonding at the joint interface were analysed by the x-ray photoelectron spectroscopy (XPS) depth-profiling method. The results show that the characteristics of the bubbles and the thickness of the chemically bonded interface, which contains the laser generated bonds of Ti–C and Ti–O, increase markedly with increasing laser energy input. The tensile failure load of the joint depends on the combined effect of the amount and distribution of the bubbles formed and the chemical bonding intensity of the joint interface.

Keywords: Laser direct joining, Ti/PET interface, laser energy, XPS depth profiling, chemical bond, tensile failure load.

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, Kink Effect, SILVACO TCAD.

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Authors: Bassim Bachy, Joerg Franke

Abstract:

In this study, a three dimensional numerical heat transfer model has been used to simulate the laser structuring of polymer substrate material in the Three-Dimensional Molded Interconnect Device (3D MID) which is used in the advanced multifunctional applications. A finite element method (FEM) transient thermal analysis is performed using APDL (ANSYS Parametric Design Language) provided by ANSYS. In this model, the effect of surface heat source was modeled with Gaussian distribution, also the effect of the mixed boundary conditions which consist of convection and radiation heat transfers have been considered in this analysis. The model provides a full description of the temperature distribution, as well as calculates the depth and the width of the groove upon material removal at different set of laser parameters such as laser power and laser speed. This study also includes the experimental procedure to study the effect of laser parameters on the depth and width of the removal groove metal as verification to the modeled results. Good agreement between the experimental and the model results is achieved for a wide range of laser powers. It is found that the quality of the laser structure process is affected by the laser scan speed and laser power. For a high laser structured quality, it is suggested to use laser with high speed and moderate to high laser power.

Keywords: Laser Structuring, Simulation, Finite element analysis, Thermal modeling.

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Authors: A. Аndreev, Yu. Rozhdestvenskii, К. Platonov, R. Salomaa

Abstract:

This paper considers various channels of gammaquantum generation via an ultra-short high-power laser pulse interaction with different targets.We analyse the possibilities to create a pulsed gamma-radiation source using laser triggering of some nuclear reactions and isomer targets. It is shown that sub-MeV monochromatic short pulse of gamma-radiation can be obtained with pulse energy of sub-mJ level from isomer target irradiated by intense laser pulse. For nuclear reaction channel in light- atom materials, it is shown that sub-PW laser pulse gives rise to formation about million gamma-photons of multi-MeV energy.

Keywords: High power laser, short pulse, fast particles, isomertarget.

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Authors: Sam-Ang Keo, Franck Brachelet, Florin Breaban, Didier Defer

Abstract:

This paper presents a NDT by infrared thermography with excitation CO2 Laser, wavelength of 10.6 μm. This excitation is the controllable heating beam, confirmed by a preliminary test on a wooden plate 1.2 m x 0.9 m x 1 cm. As the first practice, this method is applied to detecting the defect in CFRP heated by the Laser 300 W during 40 s. Two samples 40 cm x 40 cm x 4.5 cm are prepared, one with defect, another one without defect. The laser beam passes through the lens of a deviation device, and heats the samples placed at a determinate position and area. As a result, the absence of adhesive can be detected. This method displays prominently its application as NDT with the composite materials. This work gives a good perspective to characterize the laser beam, which is very useful for the next detection campaigns.

Keywords: CO2 LASER, Infrared Thermography, NDT, CFRP, Defect Detection.

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Authors: Xiang Li, Zhixian Chen, Zheng Fang, Aashit Kamath, Xinpeng Wang, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong

Abstract:

We integrate TiN/Ni/HfO2/Si RRAM cell with a vertical gate-all-around (GAA) nanowire transistor to achieve compact 4F2 footprint in a 1T1R configuration. The tip of the Si nanowire (source of the transistor) serves as bottom electrode of the memory cell. Fabricated devices with nanowire diameter ~ 50nm demonstrate ultra-low current/power switching; unipolar switching with 10μA/30μW SET and 20μA/30μW RESET and bipolar switching with 20nA/85nW SET and 0.2nA/0.7nW RESET. Further, the switching current is found to scale with nanowire diameter making the architecture promising for future scaling.

Keywords: RRAM, 1T1R, gate-all-around FET, nanowire FET, vertical MOSFETs

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Authors: Abdullah Yassin, Takashi Ueda, Syed Tarmizi Syed Shazali

Abstract:

This paper presents an experimental investigation on the machinability of laser-sintered material using small ball end mill focusing on wear mechanisms. Laser-sintered material was produced by irradiating a laser beam on a layer of loose fine SCM-Ni-Cu powder. Bulk carbon steel JIS S55C was selected as a reference steel. The effects of powder consolidation mechanisms and unsintered powder on the tool life and wear mechanisms were carried out. Results indicated that tool life in cutting laser-sintered material is lower than that in cutting JIS S55C. Adhesion of the work material and chipping were the main wear mechanisms of the ball end mill in cutting laser-sintered material. Cutting with the unsintered powder surrounding the tool and laser-sintered material had caused major fracture on the cutting edge.

Keywords: Laser-sintered material, tool life, wear mechanism.

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Authors: L.C. Kgomari, R.K.K.Mbaya

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This research was conducted to develop a correlation between microstructure of HSLA steel and the mechanical properties that occur as a result of both laser and mechanical forming processes of the metal. The technique of forming flat metals by applying laser beams is a relatively new concept in the manufacturing industry. However, the effects of laser energy on the stability of metal alloy phases have not yet been elucidated in terms of phase transformations and microhardness. In this work, CO2 laser source was used to irradiate the surface of a flat metal then the microstructure and microhardness of the metal were studied on the formed specimen. The extent to which the microstructure changed depended on the heat inputs of up to 1000 J/cm2 with cooling rates of about 4.8E+02 K/s. Experimental results revealed that the irradiated surface of a HSLA steel had transformed to austenitic structure during the heating process.

Keywords: Laser, Forming, Microstructure

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Authors: E. Farsad, S. P. Abbasi, A. Goodarzi, M. S. Zabihi

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Nowadays, quasi-continuous wave diode lasers are used in a widespread variety of applications. Temperature effects in these lasers can strongly influence their performance. In this paper, the effects of temperature have been experimentally investigated on different features of a 60W-QCW diode laser. The obtained results indicate that the conversion efficiency and operation voltage of diode laser decrease with the augmentation of the working temperature associated with a redshift in the laser peak wavelength. Experimental results show the emission peak wavelength of laser shifts 0.26 nm and the conversion efficiency decreases 1.76 % with the increase of temperature from 40 to 50 ̊C. Present study also shows the slope efficiency decreases gradually at low temperatures and rapidly at higher temperatures. Regarding the close dependence of the mentioned parameters to the operating temperature, it is of great importance to carefully control the working temperature of diode laser, particularly for medical applications.

Keywords: diode laser, experimentally, temperature, wavelength

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Authors: R.J. Clarke, D. Neely, S. Blake, D.C. Carroll, J.S. Green, R. Heathcote, M. Notley

Abstract:

High Power Lasers produce an intense burst of Bremmstrahlung radiation which has potential applications in broadband x-ray radiography. Since the radiation produced is through the interaction of accelerated electrons with the remaining laser target, these bursts are extremely short – in the region of a few ps. As a result, the laser-produced x-rays are capable of imaging complex dynamic objects with zero motion blur.

Keywords: Bremmstrahlung, Imaging, Laser, Plasma, Radiography, x-ray.

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