@article{(Open Science Index):https://publications.waset.org/pdf/10000386,
	  title     = {Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT)},
	  author    = {Sangeeta Singh and  Pankaj Kumar and  P. N. Kondekar},
	  country	= {},
	  institution	= {},
	  abstract     = {In this paper, the transient device performance analysis
of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been
evaluated. 3-D Bohm Quantum Potential (BQP) transport device
simulation has been used to evaluate the delay and power dissipation
performance. GI-JLT has a number of desirable device parameters
such as reduced propagation delay, dynamic power dissipation,
power and delay product, intrinsic gate delay and energy delay
product as compared to Gate-all-around transistors GAA-JLT. In
addition to this, various other device performance parameters namely,
on/off current ratio, short channel effects (SCE), transconductance
Generation Factor (TGF) and unity gain cut-off frequency (fT ) and
subthreshold slope (SS) of the GI-JLT and GAA-JLT have been
analyzed and compared. GI-JLT shows better device performance
characteristics than GAA-JLT for low power and high frequency
applications, because of its larger gate electrostatic control on the
device operation.
},
	    journal   = {International Journal of Nuclear and Quantum Engineering},
	  volume    = {8},
	  number    = {10},
	  year      = {2014},
	  pages     = {1648 - 1652},
	  ee        = {https://publications.waset.org/pdf/10000386},
	  url   	= {https://publications.waset.org/vol/94},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 94, 2014},
	}