@article{(Open Science Index):https://publications.waset.org/pdf/10013425,
	  title     = {Ultrafast Transistor Laser Containing Graded Index Separate Confinement Heterostructure},
	  author    = {Mohammad Hosseini},
	  country	= {},
	  institution	= {},
	  abstract     = {Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance-free optical frequency response with -3 dB bandwidth of more than 26 GHz has been achieved for a single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) in the left side of quantum well and AlξGa1-ξAs (ξ: 0.05→0) in the right side of quantum well. All required parameters, including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime, have been calculated using a self-consistent charge control model.},
	    journal   = {International Journal of Physical and Mathematical Sciences},
	  volume    = {17},
	  number    = {12},
	  year      = {2023},
	  pages     = {159 - 162},
	  ee        = {https://publications.waset.org/pdf/10013425},
	  url   	= {https://publications.waset.org/vol/204},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 204, 2023},
	}