Search results for: Silicon waveguide

Authors: T.R. Sahroni, S. Sulaiman, I. Romli, M.R. Salleh, H.A. Ariff

Abstract:

The thermal expansion behaviour of silicon carbide (SCS-2) fibre reinforced 6061 aluminium matrix composite subjected to the influenced thermal mechanical cycling (TMC) process were investigated. The thermal stress has important effect on the longitudinal thermal expansion coefficient of the composites. The present paper used experimental data of the thermal expansion behaviour of a SiC/Al composite for temperatures up to 370°C, in which their data was used for carrying out modelling of theoretical predictions.

Keywords: Nonlinear, thermal, fibre reinforced, metal matrixcomposites

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Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

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Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

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Authors: Anil Kumar Pandey

Abstract:

A compact planar monopole antenna with dual-band operation suitable for wireless local area network (WLAN) application is presented in this paper. The antenna occupies an overall area of 18 ×12 mm². The antenna is fed by a coplanar waveguide (CPW) transmission line and it combines two folded strips, which radiates at 2.4 and 5.2 GHz. In the proposed antenna, by optimally selecting the antenna dimensions, dual-band resonant modes with a much wider impedance matching at the higher band can be produced. Prototypes of the obtained optimized design have been simulated using EM solver. The simulated results explore good dual-band operation with -10 dB impedance bandwidths of 50 MHz and 2400 MHz at bands of 2.4 and 5.2 GHz, respectively, which cover the 2.4/5.2/5.8 GHz WLAN operating bands. Good antenna performances such as radiation patterns and antenna gains over the operating bands have also been observed. The antenna with a compact size of 18×12×1.6 mm³ is designed on an FR4 substrate with a dielectric constant of 4.4.

Keywords: CPW fed antenna, dual-band, electromagnetic simulation, wireless local area network, WLAN.

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Authors: Wei Quan, Liu Chao, Mohammed N. Afsar

Abstract:

The dielectric properties and ionic conductivity of novel "ceramic state" polymer electrolytes for high capacity lithium battery are characterized by Radio frequency and Microwave methods in two broad frequency ranges from 50 Hz to 20 KHz and 4 GHz to 40 GHz. This innovative solid polymer electrolyte which is highly ionic conductive (10-3 S/cm at room temperature) from -40oC to +150oC can be used in any battery application. Such polymer exhibits properties more like a ceramic rather than polymer. The various applied measurement methods produced accurate dielectric results for comprehensive analysis of electrochemical properties and ion transportation mechanism of this newly invented polymer electrolyte. Two techniques and instruments employing air gap measurement by Capacitance Bridge and in-waveguide measurement by vector network analyzer are applied to measure the complex dielectric spectra. The complex dielectric spectra are used to determine the complex alternating current electrical conductivity and thus the ionic conductivity.

Keywords: Polymer electrolyte, dielectric permittivity, lithium battery, ionic relaxation, microwave measurement.

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Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

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The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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Authors: S. Srinivas, N. Ramesh Babu

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This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained with Silicon Carbide (SiC) blocks.

Keywords: Abrasive waterjet cutting, analytical modeling, ceramics, microcutting and intergranular cracking.

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Authors: Siti Kudnie Sahari, Jane Chai Hai Sing, Khairuddin Ab. Hamid

Abstract:

Shrunken patterning for integrated device manufacturing requires surface cleanliness and surface smoothness in wet chemical processing [1]. It is necessary to control all process parameters perfectly especially for the common cleaning technique RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and effect of surface preparation parameters are discussed. The properties of RCA wet chemical processing in silicon technology is based on processing time, temperature, concentration and megasonic power of SC-1 and QDR. An improvement of wafer surface preparation by the enhanced variables of the wet cleaning chemical process is proposed.

Keywords: RCA, SC-1, SC-2, QDR

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Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents the design and analysis of Liquid Crystal (LC) based tunable reflectarray antenna with different design configurations within X-band frequency range. The effect of LC volume used for unit cell element on frequency tunability and reflection loss performance has been investigated. Moreover different slot embedded patch element configurations have been proposed for LC based tunable reflectarray antenna design with enhanced performance. The detailed fabrication and measurement procedure for different LC based unit cells has been presented. The waveguide scattering parameter measured results demonstrated that by using the circular slot embedded patch elements, the frequency tunability and dynamic phase range can be increased from 180MHz to 200MHz and 120° to 124° respectively. Furthermore the circular slot embedded patch element can be designed at 10GHz resonant frequency with a patch volume of 2.71mm3 as compared to 3.47mm3 required for rectangular patch without slot.

Keywords: Liquid crystal, Tunable reflectarray, Frequency tunability, Dynamic phase range.

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Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents the design and analysis of Liquid Crystal (LC) based tunable reflectarray antenna with different design configurations within X-band frequency range. The effect of LC volume used for unit cell element on frequency tunability and reflection loss performance has been investigated. Moreover different slot embedded patch element configurations have been proposed for LC based tunable reflectarray antenna design with enhanced performance. The detailed fabrication and measurement procedure for different LC based unit cells has been presented. The waveguide scattering parameter measured results demonstrated that by using the circular slot embedded patch elements, the frequency tunability and dynamic phase range can be increased from 180MHz to 200MHz and 120° to 124° respectively. Furthermore the circular slot embedded patch element can be designed at 10GHz resonant frequency with a patch volume of 2.71mm3 as compared to 3.47mm3 required for rectangular patch without slot.

Keywords: Liquid crystal, Tunable reflectarray, Frequency tunability, Dynamic phase range.

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Authors: Vladimir Veremey

Abstract:

The paper describes the design and simulation of dual-polarization antennas that use the resonance and radiating properties of the H₀₀ mode of metal open waveguides. The proposed antennas are formed by two orthogonal slots in a finite conducting ground plane. The slots are backed by metal screens connected to the ground plane forming open waveguides. It has been shown that the antenna designs can be efficiently used in mm-wave bands. The antenna single mode operational bandwidth is higher than 10%. The antenna designs are very simple and low-cost. They allow flush installation and can be efficiently used in various communication and remote sensing devices on fast moving carriers. Mutual coupling between antennas of the proposed design is very low. Thus, multiple antenna structures with proposed antennas can be efficiently employed in multi-band and in multiple-input-multiple-output (MIMO) systems.

Keywords: Antenna, antenna arrays, multiple-input-multiple-output, MIMO, millimeter wave bands, slot antenna, flush installation, directivity, open waveguide, conformal antennas.

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Authors: R. K. Apalowo, D. Chronopoulos, V. Thierry

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There exist a wide range of failure modes in composite structures due to the increased usage of the structures especially in aerospace industry. Moreover, temperature dependent wave response of composite and layered structures have been continuously studied, though still limited, in the last decade mainly due to the broad operating temperature range of aerospace structures. A wave finite element (WFE) and finite element (FE) based computational method is presented by which the temperature dependent wave dispersion characteristics and interaction phenomenon in composite structures can be predicted. Initially, the temperature dependent mechanical properties of the panel in the range of -100 ◦C to 150 ◦C are measured experimentally using the Thermal Mechanical Analysis (TMA). Temperature dependent wave dispersion characteristics of each waveguide of the structural system, which is discretized as a system of a number of waveguides coupled by a coupling element, is calculated using the WFE approach. The wave scattering properties, as a function of temperature, is determined by coupling the WFE wave characteristics models of the waveguides with the full FE modelling of the coupling element on which defect is included. Numerical case studies are exhibited for two waveguides coupled through a coupling element.

Keywords: Temperature dependent mechanical characteristics, wave propagation properties, damage detection, wave finite element, composite structure.

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Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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Authors: M. S. Said, J. A. Ghani, Che Hassan C. H., N. N. Wan, M. A. Selamat, R. Othman

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Metal matrix composites (MMCs) attract considerable attention as a result from its ability in providing a high strength, high modulus, high toughness, high impact properties, improving wear resistance and providing good corrosion resistance compared to unreinforced alloy. Aluminium Silicon (Al/Si) alloy MMC has been widely used in various industrial sectors such as in transportation, domestic equipment, aerospace, military, construction, etc. Aluminium silicon alloy is an MMC that had been reinforced with aluminium nitrate (AlN) particle and become a new generation material use in automotive and aerospace sector. The AlN is one of the advance material that have a bright prospect in future since it has features such as lightweight, high strength, high hardness and stiffness quality. However, the high degree of ceramic particle reinforcement and the irregular nature of the particles along the matrix material that contribute to its low density is the main problem which leads to difficulties in machining process. This paper examined the tool wear when milling AlSi/AlN Metal Matrix Composite using a TiB2 (Titanium diboride) coated carbide cutting tool. The volume of the AlN reinforced particle was 10% and milling process was carried out under dry cutting condition. The TiB2 coated carbide insert parameters used were at the cutting speed of (230, 300 and 370m/min, feed rate of 0.8, Depth of Cut (DoC) at 0.4m). The Sometech SV-35 video microscope system used to quantify of the tool wear. The result shown that tool life span increasing with the cutting speeds at (370m/min, feed rate of 0.8mm/tooth and DoC at 0.4mm) which constituted an optimum condition for longer tool life lasted until 123.2 mins. Meanwhile, at medium cutting speed which at 300m/m, feed rate of 0.8mm/tooth and depth of cut at 0.4mm we found that tool life span lasted until 119.86 mins while at low cutting speed it lasted in 119.66 mins. High cutting speed will give the best parameter in cutting AlSi/AlN MMCs material. The result will help manufacturers in machining process of AlSi/AlN MMCs materials.

Keywords: AlSi/AlN Metal Matrix Composite milling process, tool wear, TiB2 coated cemented carbide tool.

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Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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Authors: Rizwan Asghar, Dake Liu

Abstract:

The direct implementation of interleaver functions in WiMAX is not hardware efficient due to presence of complex functions. Also the conventional method i.e. using memories for storing the permutation tables is silicon consuming. This work presents a 2-D transformation for WiMAX channel interleaver functions which reduces the overall hardware complexity to compute the interleaver addresses on the fly. A fully reconfigurable architecture for address generation in WiMAX channel interleaver is presented, which consume 1.1 k-gates in total. It can be configured for any block size and any modulation scheme in WiMAX. The presented architecture can run at a frequency of 200 MHz, thus fully supporting high bandwidth requirements for WiMAX.

Keywords: Interleaver, deinterleaver, WiMAX, 802.16e.

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Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents the design and analysis of Liquid Crystal (LC) based tunable reflectarray antenna with slot embedded patch element configurations within X-band frequency range. The slots are shown to modify the surface current distribution on the patch element of reflectarray which causes the resonant patch element to provide different resonant frequencies depending on the slot dimensions. The simulated results are supported and verified by waveguide scattering parameter measurements of different reflectarray unit cells. Different rectangular slots on patch element have been fabricated and a change in resonant frequency from 10.46GHz to 8.78GHz has been demonstrated as the width of the rectangular slot is varied from 0.2W to 0.6W. The rectangular slot in the center of the patch element has also been utilized for the frequency tunable reflectarray antenna design based on K-15 Nematic LC. For the active reflectarray antenna design, a frequency tunability of 1.2% from 10GHz to 9.88GHz has been demonstrated with a dynamic phase range of 103° provided by the measured scattering parameter results. Time consumed by liquid crystals for reconfiguration, which is one of the drawback of LC based design, has also been disused in this paper.

Keywords: Liquid crystal, tunable reflectarray, frequency tunability, dynamic phase range.

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Authors: Nadezhda Nikolaeva, Tatyana Alexandrova, Alexandr Alexandrov

Abstract:

Processing of high-silicon bauxite on the base of the traditional clinkering method is related to high power consumption and capital investments, which makes production of alumina from those ores non-competitive in terms of basic economic showings. For these reasons, development of technological solutions enabling to process bauxites with various chemical and mineralogical structures efficiently with low level of thermal power consumption is important. Flow sheet of the studies on washability of ores from the Timanskoe and the Severo-Onezhskoe deposits is on the base of the flotation method.

Keywords: Low-quality bauxite, resource-saving technology, optimization, aluminum, conditioning of composition, separation characteristics.

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Authors: S. Y. Choi, Y. H. Na, J. H. Kim

Abstract:

In this work, thermoelastic damping effect on the hemi- spherical shells is investigated. The material is selected silicon, and heat conduction equation for thermal flow is solved to obtain the temperature profile in which bending approximation with inextensional assumption of the model. Using the temperature profile, eigen-value analysis is performed to get the natural frequencies of hemispherical shells. Effects of mode numbers, radii and radial thicknesses of the model on the natural frequencies are analyzed in detail. Furthermore, the quality factor (Q-factor) is defined, and discussed for the ring and hemispherical shell.

Keywords: Thermoelastic damping, hemispherical shell, quality factor

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Authors: Yong Seo Koo, Dong Su Kim, Byung Seok Lee, Won Suk Park, Bo Bea Song

Abstract:

This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V.

Keywords: ESD (Electro-Static Discharge), ESD protection device, SCR (Silicon Controlled Rectifier), Latch-up

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Authors: N. Shen, T. T. Le, H. Y. Yu, Z. X. Chen, K. T. Win, N. Singh, G. Q. Lo, D. -L. Kwong

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In this paper, we present a vertical nanowire thin film transistor with gate-all-around architecture, fabricated using CMOS compatible processes. A novel method of fabricating polysilicon vertical nanowires of diameter as small as 30 nm using wet-etch is presented. Both n-type and p-type vertical poly-silicon nanowire transistors exhibit superior electrical characteristics as compared to planar devices. On a poly-crystalline nanowire of 30 nm diameter, high Ion/Ioff ratio of 106, low drain-induced barrier lowering (DIBL) of 50 mV/V, and low sub-threshold slope SS~100mV/dec are demonstrated for a device with channel length of 100 nm.

Keywords: Nanowire (NW), Gate-all-around (GAA), polysilicon (poly-Si), thin-film transistor (TFT).

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Authors: Jiang Fan

Abstract:

With growth of PV market in tropical region, it is necessary to investigate the performance of different types of PV technology under the tropical weather conditions. Singapore Polytechnic was funded by Economic Development Board (EDB) to set up a solar PV test-bed for the research on performance of different types of PV modules in the country. The PV test-bed installed the nine different types of PV systems that are integrated to power utility grid for monitoring and analyzing their operating performances. This paper presents the 12 months operational data of nine different PV systems and analyses on performances of installed PV systems using energy yield and performance ratio. The nine types of PV systems under test have shown their energy yields ranging from 2.67 to 3.36 kWh/kW_p and their performance ratios (PRs) ranging from 70% to 88%.

Keywords: Monocrystalline, Multicrystalline, Amorphous Silicon, Cadmium Telluride and thin film PV.

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Authors: Tze Sian Pui, Tushar Bansal, Patthara Kongsuphol, Sunil K. Arya

Abstract:

We present a label-free biosensor based on electrochemical impedance spectroscopy for the detection of proinflammatory cytokine Tumor Necrosis Factor (TNF-α). Secretion of TNF-α has been correlated to the onset of various diseases including rheumatoid arthritis, Crohn-s disease etc. Gold electrodes were patterned on a silicon substrate and self assembled monolayer of dithiobis-succinimidyl propionate was used to develop the biosensor which achieved a detection limit of ~57fM. A linear relationship was also observed between increasing TNF-α concentrations and chargetransfer resistance within a dynamic range of 1pg/ml – 1ng/ml.

Keywords: Tumor necrosis factor, electrochemical impedance spectroscopy, label free, self assembled monolayer

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Authors: Azza M. Anis, M. M. Abutaleb, Hani F. Ragai, M. I. Eladawy

Abstract:

This paper presents the characterization and design of a capacitive pressure sensor with LC-based 0.35 µm CMOS readout circuit. SPICE is employed to evaluate the characteristics of the readout circuit and COMSOL multiphysics structural analysis is used to simulate the behavior of the pressure sensor. The readout circuit converts the capacitance variation of the pressure sensor into the frequency output. Simulation results show that the proposed pressure sensor has output frequency from 2.50 to 2.28 GHz in a pressure range from 0.1 to 2 MPa almost linearly. The sensitivity of the frequency shift with respect to the applied pressure load is 0.11 GHz/MPa.

Keywords: CMOS LC-based oscillator, micro pressure sensor, silicon carbide

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Authors: Muhammad Ali, Awais Adnan

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Network on a chip (NoC) has been proposed as a viable solution to counter the inefficiency of buses in the current VLSI on-chip interconnects. However, as the silicon chip accommodates more transistors, the probability of transient faults is increasing, making fault tolerance a key concern in scaling chips. In packet based communication on a chip, transient failures can corrupt the data packet and hence, undermine the accuracy of data communication. In this paper, we present a comparative analysis of transient fault tolerant techniques including end-to-end, node-by-node, and stochastic communication based on flooding principle.

Keywords: NoC, fault-tolerance, transient faults.

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Authors: A. Karsenty, A. Chelly

Abstract:

Ultrathin (UTD) and Nanoscale (NSD) SOI-MOSFET devices, sharing a similar W/L but with a channel thickness of 46nm and 1.6nm respectively, were fabricated using a selective “gate recessed” process on the same silicon wafer. The electrical transport characterization at room temperature has shown a large difference between the two kinds of devices and has been interpreted in terms of a huge unexpected series resistance. Electrical characteristics of the Nanoscale device, taken in the linear region, can be analytically derived from the ultrathin device ones. A comparison of the structure and composition of the layers, using advanced techniques such as Focused Ion Beam (FIB) and High Resolution TEM (HRTEM) coupled with Energy Dispersive X-ray Spectroscopy (EDS), contributes an explanation as to the difference of transport between the devices.

Keywords: Nanoscale Devices, SOI MOSFET, Analytical Model, Electron Transport.

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Authors: N. Dahraoui, M. Boulakroune, D. Benatia

Abstract:

In this paper, the improvement by deconvolution of the depth resolution in Secondary Ion Mass Spectrometry (SIMS) analysis is considered. Indeed, we have developed a new Tikhonov- Miller deconvolution algorithm where a priori model of the solution is included. This is a denoisy and pre-deconvoluted signal obtained from: firstly, by the application of wavelet shrinkage algorithm, secondly by the introduction of the obtained denoisy signal in an iterative deconvolution algorithm. In particular, we have focused the light on the effect of the iterations number on the evolution of the deconvoluted signals. The SIMS profiles are multilayers of Boron in Silicon matrix.

Keywords: DRF, in-depth resolution, multiresolution deconvolution, SIMS, wavelet shrinkage.

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Authors: N. H. Arabi, Aicha Iratni, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

Abstract:

TiO2 thin films have been prepared by the sol-gel dipcoating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral domains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: Dip coating, mono-Si, titanium oxide, thin film.

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Authors: Edison Muzenda, John Kabuba, Freeman Ntuli, Mansoor Mollagee

Abstract:

The aim of this study was to investigate ammonium exchange capacity of natural and activated clinoptilolite from Kwazulu-Natal Province, South Africa. X – ray fluorescence (XRF) analysis showed that the clinoptilolite contained exchangeable ions of sodium, potassium, calcium and magnesium. This analysis also confirmed that the zeolite sample had a high silicon composition compared to aluminium. Batch equilibrium studies were performed in an orbital shaker and the data fitted the Langmuir isotherm very well. The ammonium exchange capacity was found to increase with pH and temperature. Clinoptilolite functionalization with hydrochloric acid increased its ammonia uptake ability.

Keywords: Activated clinoptilolite, Ammonium exchange, Equilibrium, Functionalization, Langmuir isotherm

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Authors: Hee-Guk Chae, Bo-Bae Song, Kyoung-Il Do, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

In this study, an improved Electrostatic Discharge (ESD) protection circuit with low trigger voltage and high holding voltage is proposed. ESD has become a serious problem in the semiconductor process because the semiconductor density has become very high these days. Therefore, much research has been done to prevent ESD. The proposed circuit is a stacked structure of the new unit structure combined by the Zener Triggering (SCR ZTSCR) and the High Holding Voltage SCR (HHVSCR). The simulation results show that the proposed circuit has low trigger voltage and high holding voltage. And the stack technology is applied to adjust the various operating voltage. As the results, the holding voltage is 7.7 V for 2-stack and 10.7 V for 3-stack.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage.

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Authors: W. Z. Wang, S. Todd, S. B. Dolmanan, K. B. Lee, L. Yuan, H. F. Sun, S. L. Selvaraj, M.Krishnakumar, G. Q. Lo, S. Tripathy

Abstract:

The crystalline quality of the AlGaN/GaN high electron mobility transistor (HEMT) structure grown on a 200 mm silicon substrate has been investigated using UV-visible micro- Raman scattering and photoluminescence (PL). The visible Raman scattering probes the whole nitride stack with the Si substrate and shows the presence of a small component of residual in-plane stress in the thick GaN buffer resulting from a wafer bowing, while the UV micro-Raman indicates a tensile interfacial stress induced at the top GaN/AlGaN/AlN layers. PL shows a good crystal quality GaN channel where the yellow band intensity is very low compared to that of the near-band-edge transition. The uniformity of this sample is shown by measurements from several points across the epiwafer.

Keywords: Raman, photo luminescence, AlGaN/GaN, HEMT.

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