Photoluminescence Properties of β-FeSi2 on Cu- or Au-coated Si

Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Abstract:

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1057967

References:

[1] V. Borisenko (Ed.), Semiconducting Silicides. Springer-Verlag, Berlin, 2000.
[2] N.Cherief, C.D-Anterroches, R.Cinti, T.Tan, and J.Derrien, "Semiconducting silicideÔÇÉsilicon heterojunction elaboration by solid phase epitaxy," Appl. Phys. Lett., Vol. 55, pp. 1671-1673, 1989.
[3] T. Suemasu, K. Takakura, C. Li, Y. Ozawa, Y. Kumagai, and F. Hasegawa, "Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes," Thin Solid Films, vol. 461, pp. 209-218, 2004.
[4] T. Suemasu, Y. Iikura, T. Fujii, K. Takakura, N. Hiroi, and F. Hasegawa, "Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal Organic Chemical Vapor Deposition ," Jpn. J. Appl. Phys., vol. 38, pp. L620-622, 1999.
[5] K. Akiyama, T. Kimura, T. Suemasu, F. Hasegawa, Y. Maeda, and H. Funakubo, " Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal Organic Chemical Vapor Deposition," Jpn. J. Appl. Phys., vol. 43 pp. L551-553, 2004.
[6] T.D. Hunt, K.J. Reeson, R.M. Gwilliam, K.P. Homewood, R.J. Wilson, and B.J. Sealy, "Investigation of the luminescence properties of Si/ β-FeSi2/Si heterojunction structures fabricated by ion beam synthesis," J. Lumin. Vol. 57 pp. 25-27, 1993.
[7] L. Martinelli, E. Grilli, D.B. Migas, L. Miglio, F. Marabelli, C. Soci, M. Geddo, M.G. Grimaldi, and C. Spinella, "Luminescence from β-FeSi2 precipitates in Si. II: Origin and nature of the photoluminescence," Phys. Rev., B vol. 66 pp. 085320, 2002.
[8] J. I. Pankove, Optical Process in Semiconductor. Prentice-Hall, Englewood Cliffs, NJ, 1971.