A. Lakrim and D. Tahri
SiC Merged PiN and Schottky (MPS) Power Diodes Electrothermal Modeling in SPICE
1390 - 1394
2014
8
8
International Journal of Energy and Power Engineering
https://publications.waset.org/pdf/10003770
https://publications.waset.org/vol/92
World Academy of Science, Engineering and Technology
This paper sets out a behavioral macromodel of a
Merged PiN and Schottky (MPS) diode based on silicon carbide
(SiC). This model holds good for both static and dynamic electrothermal
simulations for industrial applications. Its parameters have
been worked out from datasheets curves by drawing on the
optimization method Simulated Annealing (SA) for the SiC MPS
diodes made available in the industry. The model also adopts the
Analog Behavioral Model (ABM) of PSPICE in which it has been
implemented. The thermal behavior of the devices was also taken
into consideration by making use of Foster’ canonical network as
figured out from electrothermal measurement provided by the
manufacturer of the device.
Open Science Index 92, 2014