Search results for: Silicon Nitride

Authors: U. Achutha Kini, S. S. Sharma, K. Jagannath, P. R. Prabhu, Gowri Shankar M. C.

Abstract:

Aluminium matrix composites with alumina reinforcements give superior mechanical & physical properties. Their applications in several fields like automobile, aerospace, defense, sports, electronics, bio-medical and other industrial purposes are becoming essential for the last several decades. In the present work, fabrication of hybrid composite was done by Stir casting technique using Al 6061 as a matrix with alumina and silicon carbide (SiC) as reinforcement materials. The weight percentage of alumina is varied from 2 to 4% and the silicon carbide weight percentage is maintained constant at 2%. Hardness and wear tests are performed in the as cast and heat treated conditions. Age hardening treatment was performed on the specimen with solutionizing at 550°C, aging at two temperatures (150 and 200°C) for different time durations. Hardness distribution curves are drawn and peak hardness values are recorded. Hardness increase was very sensitive with respect to the decrease in aging temperature. There was an improvement in wear resistance of the peak aged material when aged at lower temperature. Also increase in weight percent of alumina, increases wear resistance at lower temperature but opposite behavior was seen when aged at higher temperature.

Keywords: Hybrid composite, hardness test, wear test, heat treatment, pin on disc wear testing machine.

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Authors: Ching-Feng Chen, Ching-Chih Tsai

Abstract:

With the size of the transistor gradually approaching the physical limit, it challenges the persistence of Moore’s Law due to such issues of the short channel effect and the development of the high numerical aperture (NA) lithography equipment. In the context of the ever-increasing technical requirements of portable devices and high-performance computing (HPC), relying on the law continuation to enhance the chip density will no longer support the prospects of the electronics industry. Weighing the chip’s power consumption-performance-area-cost-cycle time to market (PPACC) is an updated benchmark to drive the evolution of the advanced wafer nanometer (nm). The advent of two and half- and three-dimensional (2.5 and 3D)- Very-Large-Scale Integration (VLSI) packaging based on Through Silicon Via (TSV) technology has updated the traditional die assembly methods and provided the solution. This overview investigates the up-to-date and cutting-edge packaging technologies for 2.5D and 3D integrated circuits (IC) based on the updated transistor structure and technology nodes. We conclude that multi-chip solutions for 2.5D and 3D IC packaging can prolong Moore’s Law.

Keywords: Moore’s Law, High Numerical Aperture, Power Consumption-Performance-Area-Cost-Cycle Time to Market, PPACC, 2.5 and 3D-Very-Large-Scale Integration Packaging, Through Silicon Vi.

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Authors: R. Joseph Raviselvan, K. Ramanathan, P. Perumal, M. R. Thansekhar

Abstract:

Hard coatings are widely used in cutting and forming tool industries. Titanium Nitride (TiN) possesses good hardness, strength, and corrosion resistance. The coating properties are influenced by many process parameters. The coatings were deposited on steel substrate by changing the process parameters such as substrate temperature, nitrogen flow rate and target power in a D.C planer magnetron sputtering. The structure of coatings were analysed using XRD. The hardness of coatings was found using Micro hardness tester. From the experimental data, a regression model was developed and the optimum response was determined using Response Surface Methodology (RSM).

Keywords: Hardness, RSM, sputtering, TiN XRD.

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Authors: M. Farahnakian, M.R. Razfar, S. Elhami-Joosheghan

Abstract:

This paper presents an approach for the determination of the optimal cutting parameters (spindle speed, feed rate, depth of cut and engagement) leading to minimum surface roughness in face milling of high silicon stainless steel by coupling neural network (NN) and Electromagnetism-like Algorithm (EM). In this regard, the advantages of statistical experimental design technique, experimental measurements, artificial neural network, and Electromagnetism-like optimization method are exploited in an integrated manner. To this end, numerous experiments on this stainless steel were conducted to obtain surface roughness values. A predictive model for surface roughness is created by using a back propogation neural network, then the optimization problem was solved by using EM optimization. Additional experiments were performed to validate optimum surface roughness value predicted by EM algorithm. It is clearly seen that a good agreement is observed between the predicted values by EM coupled with feed forward neural network and experimental measurements. The obtained results show that the EM algorithm coupled with back propogation neural network is an efficient and accurate method in approaching the global minimum of surface roughness in face milling.

Keywords: cutting parameters, face milling, surface roughness, artificial neural network, Electromagnetism-like algorithm,

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Authors: M. Ertas, A. C. Onel, G. Ekinci, B. Toydemir, S. Durdu, M. Usta, L. Colakerol Arslan

Abstract:

To develop AZ91D magnesium alloys with improved properties, we have applied TiN and VN/TiN multilayer coatings using DC magnetron sputter technique. Coating structure, surface morphology, chemical bonding and corrosion resistance of coatings were analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray photoelectron spectroscopy (XPS), and tafel extrapolation method, respectively. XPS analysis reveal that VN overlayer reacts with oxygen at the VN/TiN interface and forms more stable TiN layer. Morphological investigations and the corrosion results show that VN/TiN multilayer thin film coatings are quite effective to optimize the corrosion resistance of Mg alloys.

Keywords: AZ91D Mg alloys, High corrosion resistance, Transition metal nitride coatings, Magnetron sputter.

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Authors: T. Patcharawit, C. Kansomket, N. Wongnaree, W. Kritsrikan, T. Yingnakorn, S. Khumkoa

Abstract:

Recovery of pure copper and silver from end-of-life photovoltaic (PV) panels was investigated in this paper using an effective hybrid pyro-hydrometallurgical process. In the first step of waste treatment, solar panel waste was first dismantled to obtain a PV sheet to be cut and calcined at 500 °C, to separate out PV ribbon from glass cullet, ash, and volatile while the silicon wafer containing silver finger was collected for recovery. In the second step of metal recovery, copper recovery from PV ribbon was via 1-3 M HCl leaching with SnCl₂ and H₂O₂ additions in order to remove the tin-lead coating on the ribbon. The leached copper band was cleaned and subsequently melted as an anode for the next step of electrorefining. Stainless steel was set as the cathode with CuSO₄ as an electrolyte, and at a potential of 0.2 V, high purity copper of 99.93% was obtained at 96.11% recovery after 24 hours. For silver recovery, the silicon wafer containing silver finger was leached using HNO₃ at 1-4 M in an ultrasonic bath. In the next step of precipitation, silver chloride was then obtained and subsequently reduced by sucrose and NaOH to give silver powder prior to oxy-acetylene melting to finally obtain pure silver metal. The integrated recycling process is considered to be economical, providing effective recovery of high purity metals such as copper and silver while other materials such as aluminum, copper wire, glass cullet can also be recovered to be reused commercially. Compounds such as PbCl₂ and SnO₂ obtained can also be recovered to enter the market.

Keywords: Electrorefining, leaching, calcination, PV ribbon, silver finger, solar panel.

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Authors: I-Huan Chiu, Kazuhiko Ninomiya, Shin’ichiro Takeda, Meito Kajino, Miho Katsuragawa, Shunsaku Nagasawa, Atsushi Shinohara, Tadayuki Takahashi, Ryota Tomaru, Shin Watanabe, Goro Yabu

Abstract:

In recent years, a nondestructive elemental analysis method based on muonic X-ray measurements has been developed and applied for various samples. Muonic X-rays are emitted after the formation of a muonic atom, which occurs when a negatively charged muon is captured in a muon atomic orbit around the nucleus. Because muonic X-rays have a higher energy than electronic X-rays due to the muon mass, they can be measured without being absorbed by a material. Thus, estimating the two-dimensional (2D) elemental distribution of a sample became possible using an X-ray imaging detector. In this work, we report a non-destructive imaging experiment using muonic X-rays at Japan Proton Accelerator Research Complex. The irradiated target consisted of a polypropylene material, and a double-sided silicon strip detector, which was developed as an imaging detector for astronomical obervation, was employed. A peak corresponding to muonic X-rays from the carbon atoms in the target was clearly observed in the energy spectrum at an energy of 14 keV, and 2D visualizations were successfully reconstructed to reveal the projection image from the target. This result demonstrates the potential of the nondestructive elemental imaging method that is based on muonic X-ray measurement. To obtain a higher position resolution for imaging a smaller target, a new detector system will be developed to improve the statistical analysis in further research.

Keywords: DSSD, muon, muonic X-ray, imaging, non-destructive analysis

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Authors: Josef Brychta, Jiri Kratochvil, Marek Pagac

Abstract:

The group of progressive cutting materials can include non-traditional, emerging and less-used materials that can be an efficient use of cutting their lead to a quantum leap in the field of machining. This is essentially a “superhard” materials (STM) based on polycrystalline diamond (PCD) and polycrystalline cubic boron nitride (PCBN) cutting performance ceramics and development is constantly "perfecting" fine coated cemented carbides. The latter cutting materials are broken down by two parameters, toughness and hardness. A variation of alloying elements is always possible to improve only one of each parameter. Reducing the size of the core on the other hand doing achieves "contradictory" properties, namely to increase both hardness and toughness.

Keywords: Grained cutting materials difficult to machine materials, optimum utilization.

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The optical properties of InGaN/GaN laser diode based on quaternary alloys stopper and superlattice layers are numerically studied using ISE TCAD (Integrated System Engineering) simulation program. Improvements in laser optical performance have been achieved using quaternary alloy as superlattice layers in InGaN/GaN laser diodes. Lower threshold current of 18 mA and higher output power and slope efficiency of 22 mW and 1.6 W/A, respectively, at room temperature have been obtained. The laser structure with InAlGaN quaternary alloys as an electron blocking layer was found to provide better laser performance compared with the ternary AlxGa1-xN blocking layer.

Keywords: Nitride semiconductors, InAlGaN quaternary, laserdiode, superlattice.

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Authors: Srikanta Bose, Sudip K. Mazumder

Abstract:

We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.

Keywords: Molecular dynamics, GaN, 4H-SiC, hetero-epitaxy.

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Authors: A. Udayakumar, M. Rizvan Basha, M. Stalin, V.V Bhanu Prasad

Abstract:

Three dimensional non-Interlaced carbon fibre reinforced silicon carbide (3-D-Cf/SiC) composites with pyrocarbon interphase were fabricated using isothermal chemical vapor infiltration (ICVI) combined with polymer impregnation pyrolysis (PIP) process. Polysilazane (PSZ) is used as a preceramic polymer to obtain silicon carbide matrix. Thermo gravimetric analysis (TGA), Infrared spectroscopic analysis (IR) and X-ray diffraction (XRD) analysis were carried out on PSZ pyrolysed at different temperatures to understand the pyrolysis and obtaining the optimum pyrolysing condition to yield β-SiC phase. The density of the composites was 1.94 g cm-3 after the 3-D carbon preform was SiC infiltrated for 280 h with one intermediate polysilazane pre-ceramic PIP process. Mechanical properties of the composite materials were investigated under tensile, flexural, shear and impact loading. The values of tensile strength were 200 MPa at room temperature (RT) and 195 MPa at 500°C in air. The average RT flexural strength was 243 MPa. The lower flexural strength of these composites is because of the porosity. The fracture toughness obtained from single edge notched beam (SENB) technique was 39 MPa.m1/2. The work of fracture obtained from the load-displacement curve of SENB test was 22.8 kJ.m-2. The composites exhibited excellent impact resistance and the dynamic fracture toughness of 44.8 kJ.m-2 is achieved as determined from instrumented Charpy impact test. The shear strength of the composite was 93 MPa, which is significantly higher compared 2-D Cf/SiC composites. Microstructure evaluation of fracture surfaces revealed the signatures of fracture processes and showed good support for the higher toughness obtained.

Keywords: 3-D-Cf/SiC, charpy impact test, composites, dynamic fracture toughness, polysilazane, pyrocarbon, Interphase.

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Authors: H. Hashim, B. F. Usher

Abstract:

InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile strained InGaAsN layers. Layer characteristics have been assessed by high-resolution x-ray diffraction to determine the relationship between the lattice constant of the GaAs1-yNy layer and the fraction x of In. The objective was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy epitaxial layer with the same nitrogen content when grown on a GaAs substrate.

Keywords: Indium, molecular beam epitaxy, nitrogen, straincancellation.

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Authors: Abo-El-Nour N. Abd-Alla, Fatimah A. Alsheikh

Abstract:

This study deals with the phenomena of reflection and transmission (refraction) of qSV-waves, for an incident of quasi transverse vertically waves, at a plane interface of two semi-infinite piezoelectric elastic media under the influence of the initial stresses. The relations governing the reflection and transmission coefficients of these reflected waves for various suitable boundary conditions are derived. We have shown analytically that reflection and transmission coefficients of (qP) and (qSV) waves depend upon the angle of incidence, the parameters of electric potential, the material constants of the medium as will as the initial stresses presented in the media. The numerical calculations of the reflection and transmission amplitude ratios for different values of initial stresses have been carried out by computer for different materials as examples and the results are given in the form of graphs. Finally, some of particular cases are considered.

Keywords: Quasi plane vertical transverse waves, reflection and transmission coefficients, initial stresses, PZT-5H Ceramic, Aluminum Nitride (AlN), Piezoelectricity

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Authors: Y. Li, K. Buddharaju, X. P. Wang

Abstract:

The mechanism of nickel (Ni) metallization in silicon-germanium (Si_0.5Ge_0.5) alloy nanowire (NW) was studied. Transmission electron microscope imaging with in-situ annealing was conducted at temperatures of 200^oC to 600°C. During rapid formation of Ni germanosilicide, loss of material from from the SiGe NW occurred which led to the formation of a thin Ni germanosilicide filament and eventual void. Energy dispersive X-ray spectroscopy analysis along the SiGe NW before and after annealing determined that Ge atoms tend to out-diffuse from the Ni germanosilicide towards the Ni source in the course of annealing. A model for the Ni germanosilicide formation in SiGe NW is proposed to explain this observation.

Keywords: SiGe, nanowires, germanosilicide.

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Authors: T.R. Sahroni, S. Sulaiman, I. Romli, M.R. Salleh, H.A. Ariff

Abstract:

The thermal expansion behaviour of silicon carbide (SCS-2) fibre reinforced 6061 aluminium matrix composite subjected to the influenced thermal mechanical cycling (TMC) process were investigated. The thermal stress has important effect on the longitudinal thermal expansion coefficient of the composites. The present paper used experimental data of the thermal expansion behaviour of a SiC/Al composite for temperatures up to 370°C, in which their data was used for carrying out modelling of theoretical predictions.

Keywords: Nonlinear, thermal, fibre reinforced, metal matrixcomposites

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Authors: A.Seif, H.Aghaie, K.Majlesi

Abstract:

A computational study at the level density functional theory (DFT) was carried out to investigate the influences of Si and C-doping on the 14N and 27Al quadrupole coupling constant in the (10, 0) zigzag single ? walled Aluminum-Nitride nanotube (AlNNT). To this aim, a 1.16nm, length of AlNNT consisting of 40 Al atoms and 40 N atoms were selected where the end atoms are capped by hydrogen atom. To follow the purpose, three Si atoms and three C atoms were doped instead of three Al atoms and three N atoms as a central ring in the surface of the Si and C-doped AlNNT. At first both of systems optimized at the level of BLYP method and 6-31G (d) basis set and after that, the NQR parameters were calculated at the level BLYP method and 6-311+G** basis set in two optimized forms. The calculate CQ values for both optimized AlNNT systems, raw and Si and C-doped, reveal different electronic environments in the mentioned systems. It was also demonstrated that the end nuclei have the largest CQ values in both considered AlNNT systems. All the calculations were carried out using Gaussian 98 package of program.

Keywords: DFT, Quadrupole Coupling Constant, Si and CDoping, Single-Walled AlN nanotubes.

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Authors: Ivelina N. Cholakova, Tihomir B. Takov, Radostin Ts. Tsankov, Nicolas Simonne, Slavka S. Tzanova

Abstract:

Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18μm CMOS technology.

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Authors: Ahmad Seif, Karim Zare, Asadallah Boshra, Mehran Aghaie

Abstract:

Density functional theory (DFT) calculations were performed to compute nitrogen-14 and boron-11 nuclear quadrupole resonance (NQR) spectroscopy parameters in the representative model of armchair boron nitride nanotube (BNNT) for the first time. The considered model consisting of 1 nm length of H-capped (5, 5) single-wall BNNT were first allowed to fully relax and then the NQR calculations were carried out on the geometrically optimized model. The evaluated nuclear quadrupole coupling constants and asymmetry parameters for the mentioned nuclei reveal that the model can be divided into seven layers of nuclei with an equivalent electrostatic environment where those nuclei at the ends of tubes have a very strong electrostatic environment compared to the other nuclei along the length of tubes. The calculations were performed via Gaussian 98 package of program.

Keywords: Armchair Nanotube, Density Functional Theory, Nuclear Quadrupole Resonance.

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Authors: Kensuke Akiyama, Satoru Kaneko, Takeshi Ozawa, Kazuya Yokomizo, Masaru Itakura

Abstract:

The photoluminescence (PL) at 1.55 μm from semiconducting β-FeSi2 has attracted a noticeable interest for silicon-based optoelectronic applications. Moreover, its high optical absorption coefficient (higher than 105 cm-1 above 1.0 eV) allows this semiconducting material to be used as photovoltanics devices. A clear PL spectrum for β-FeSi2 was observed by Cu or Au coating on Si(001). High-crystal-quality β-FeSi2 with a low-level nonradiative center was formed on a Cu- or Au- reated Si layer. This method of deposition can be applied to other materials requiring high crystal quality.

Keywords: iron silicide, semiconductor, epitaxial, photoluminescence.

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Authors: AlNPhannee Saengkaew, Armin Dadgar, Juergen Blaesing, Thomas Hempel, Sakuntam Sanorpim, Chanchana Thanachayanont, Visittapong Yordsri, Watcharee Rattanasakulthong, Alois Krost

Abstract:

Group-III nitride material as particularly AlxGa1-xN is one of promising optoelectronic materials to require for shortwavelength devices. To achieve the high-quality AlxGa1-xN films for a high performance of such devices, AlN-nucleation layers are the important factor. To improve the AlN-nucleation layers with a variation of Ga-addition, XRD measurements were conducted to analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec and 750 arcsec, respectively. SEM and AFM measurements were performed to observe the surface morphology and TEM measurements to identify the microstructures and orientations. Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation layers improved the surface diffusion to form moreuniform crystallites in structure and size, better alignment of each crystallite, and better homogeneity of island distribution. This, hence, improves the orientation of epilayers on the Si-surface and finally improves the crystalline quality and reduces the residual strain of subsequent Al0.1Ga0.9N layers.

Keywords: AlGaN, UV-LEDs, seed layers, AFM, TEM

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Authors: S. Srinivas, N. Ramesh Babu

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This paper presents a model to predict the depth of penetration in polycrystalline ceramic material cut by abrasive waterjet. The proposed model considered the interaction of cylindrical jet with target material in upper region and neglected the role of threshold velocity in lower region. The results predicted with the proposed model are validated with the experimental results obtained with Silicon Carbide (SiC) blocks.

Keywords: Abrasive waterjet cutting, analytical modeling, ceramics, microcutting and intergranular cracking.

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Authors: Siti Kudnie Sahari, Jane Chai Hai Sing, Khairuddin Ab. Hamid

Abstract:

Shrunken patterning for integrated device manufacturing requires surface cleanliness and surface smoothness in wet chemical processing [1]. It is necessary to control all process parameters perfectly especially for the common cleaning technique RCA clean (SC-1 and SC-2) [2]. In this paper the characteristic and effect of surface preparation parameters are discussed. The properties of RCA wet chemical processing in silicon technology is based on processing time, temperature, concentration and megasonic power of SC-1 and QDR. An improvement of wafer surface preparation by the enhanced variables of the wet cleaning chemical process is proposed.

Keywords: RCA, SC-1, SC-2, QDR

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Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

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Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

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Authors: Bijay Kumar Sahoo, Ashok Kumar Srivastav

Abstract:

We have investigated the effect of piezoelectric (PZ) polarization property in binary as well as in ternary wurtzite nitrides. It is found that with the presence of PZ polarization property, the phonon group velocity is modified. The change in phonon group velocity due to PZ polarization effect directly depends on piezoelectric tensor value. Using different piezoelectric tensor values recommended by different workers in the literature, percent change in group velocities of phonons has been estimated. The Debye temperatures and frequencies of binary nitrides GaN, AlN and InN are also calculated using the modified group velocities. For ternary nitrides AlxGa(1-x)N, InxGa(1-x)N and InxAl(1-x)N, the phonon group velocities have been calculated as a functions of composition. A small positive bowing is observed in phonon group velocities of ternary alloys. Percent variations in phonon group velocities are also calculated for a straightforward comparison among ternary nitrides. The results are expected to show a change in phonon relaxation rates and thermal conductivity of III-nitrides when piezoelectric polarization property is taken into consideration.

Keywords: Wirtzite nitrides, piezoelectric polarization, Phonon group velocity, Debye frequency and Debye temperature.

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Authors: Hiroshi Hirano, Joji Kadota, Toshiyuki Yamashita, Yasuyuki Agari

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It is well known that enhancing interfacial adhesion between inorganic filler and matrix resin in a composite lead to favorable properties such as excellent mechanical properties, high thermal resistance, prominent electric insulation, low expansion coefficient, and so on. But it should be avoided that much excess of coupling agent is reacted due to a negative impact of their final composite-s properties. There is no report to achieve classification of the bonding state excepting investigation of coating layer thickness. Therefore, the analysis of the bonding state of the coupling agent reacted with the filler surface such as BN particles with less functional group and silica particles having much functional group was performed by thermal gravimetric analysis and pyrolysis GC/MS. The reacted number of functional groups on the silane-coupling agent was classified as a result of the analysis. Thus, we succeeded in classifying the reacted number of the functional groups as a result of this study.

Keywords: Inorganic filler, boron nitride, surface treatment, coupling agent, analysis of bonding state

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Authors: S. M. Thahab, H. Abu Hassan, Z. Hassan

Abstract:

The InAlGaN alloy has only recently began receiving serious attention into its growth and application. High quality InGaN films have led to the development of light emitting diodes (LEDs) and blue laser diodes (LDs). The quaternary InAlGaN however, represents a more versatile material since the bandgap and lattice constant can be independently varied. We report an ultraviolet (UV) quaternary InAlGaN multi-quantum wells (MQWs) LD study by using the simulation program of Integrated System Engineering (ISE TCAD). Advanced physical models of semiconductor properties were used in order to obtain an optimized structure. The device performance which is affected by piezoelectric and thermal effects was studied via drift-diffusion model for carrier transport, optical gain and loss. The optical performance of the UV LD with different numbers of quantum wells was numerically investigated. The main peak of the emission wavelength for double quantum wells (DQWs) was shifted from 358 to 355.8 nm when the forward current was increased. Preliminary simulated results indicated that better output performance and lower threshold current could be obtained when the quantum number is four, with output power of 130 mW and threshold current of 140 mA.

Keywords: Nitride semiconductors, InAlGaN quaternary, UVLD, numerical simulation.

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Authors: A. Lakrim, D. Tahri

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This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS Diode, electro-thermal, SPICE Model.

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Authors: M. S. Said, J. A. Ghani, Che Hassan C. H., N. N. Wan, M. A. Selamat, R. Othman

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Metal matrix composites (MMCs) attract considerable attention as a result from its ability in providing a high strength, high modulus, high toughness, high impact properties, improving wear resistance and providing good corrosion resistance compared to unreinforced alloy. Aluminium Silicon (Al/Si) alloy MMC has been widely used in various industrial sectors such as in transportation, domestic equipment, aerospace, military, construction, etc. Aluminium silicon alloy is an MMC that had been reinforced with aluminium nitrate (AlN) particle and become a new generation material use in automotive and aerospace sector. The AlN is one of the advance material that have a bright prospect in future since it has features such as lightweight, high strength, high hardness and stiffness quality. However, the high degree of ceramic particle reinforcement and the irregular nature of the particles along the matrix material that contribute to its low density is the main problem which leads to difficulties in machining process. This paper examined the tool wear when milling AlSi/AlN Metal Matrix Composite using a TiB2 (Titanium diboride) coated carbide cutting tool. The volume of the AlN reinforced particle was 10% and milling process was carried out under dry cutting condition. The TiB2 coated carbide insert parameters used were at the cutting speed of (230, 300 and 370m/min, feed rate of 0.8, Depth of Cut (DoC) at 0.4m). The Sometech SV-35 video microscope system used to quantify of the tool wear. The result shown that tool life span increasing with the cutting speeds at (370m/min, feed rate of 0.8mm/tooth and DoC at 0.4mm) which constituted an optimum condition for longer tool life lasted until 123.2 mins. Meanwhile, at medium cutting speed which at 300m/m, feed rate of 0.8mm/tooth and depth of cut at 0.4mm we found that tool life span lasted until 119.86 mins while at low cutting speed it lasted in 119.66 mins. High cutting speed will give the best parameter in cutting AlSi/AlN MMCs material. The result will help manufacturers in machining process of AlSi/AlN MMCs materials.

Keywords: AlSi/AlN Metal Matrix Composite milling process, tool wear, TiB2 coated cemented carbide tool.

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Authors: Bo Bae Song, Byung Seok Lee, Hyun Young Kim, Chung Kwang Lee, Yong Seo Koo

Abstract:

This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low voltage ESD for integrated circuit. The proposed ESD protection device has low trigger voltage and high holding voltage compared with conventional SCR-based ESD protection devices. The proposed ESD protection circuit is verified and compared by TCAD simulation. This paper verified effective low voltage ESD characteristics with low trigger voltage of 5.79V and high holding voltage of 3.5V through optimization depending on design variables (D1, D2, D3 and D4).

Keywords: ESD, SCR, Holding voltage, Latch-up.

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Authors: Rizwan Asghar, Dake Liu

Abstract:

The direct implementation of interleaver functions in WiMAX is not hardware efficient due to presence of complex functions. Also the conventional method i.e. using memories for storing the permutation tables is silicon consuming. This work presents a 2-D transformation for WiMAX channel interleaver functions which reduces the overall hardware complexity to compute the interleaver addresses on the fly. A fully reconfigurable architecture for address generation in WiMAX channel interleaver is presented, which consume 1.1 k-gates in total. It can be configured for any block size and any modulation scheme in WiMAX. The presented architecture can run at a frequency of 200 MHz, thus fully supporting high bandwidth requirements for WiMAX.

Keywords: Interleaver, deinterleaver, WiMAX, 802.16e.

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