%0 Journal Article
	%A S. M. Thahab and  H. Abu Hassan and  Z. Hassan
	%D 2009
	%J International Journal of Nuclear and Quantum Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 31, 2009
	%T InAlGaN Quaternary Multi-Quantum Wells UVLaser Diode Performance and Characterization
	%U https://publications.waset.org/pdf/12339
	%V 31
	%X The InAlGaN alloy has only recently began receiving
serious attention into its growth and application. High quality InGaN
films have led to the development of light emitting diodes (LEDs) and
blue laser diodes (LDs). The quaternary InAlGaN however, represents
a more versatile material since the bandgap and lattice constant can be
independently varied. We report an ultraviolet (UV) quaternary
InAlGaN multi-quantum wells (MQWs) LD study by using the
simulation program of Integrated System Engineering (ISE TCAD).
Advanced physical models of semiconductor properties were used in
order to obtain an optimized structure. The device performance which
is affected by piezoelectric and thermal effects was studied via
drift-diffusion model for carrier transport, optical gain and loss. The
optical performance of the UV LD with different numbers of quantum
wells was numerically investigated. The main peak of the emission
wavelength for double quantum wells (DQWs) was shifted from 358
to 355.8 nm when the forward current was increased. Preliminary
simulated results indicated that better output performance and lower
threshold current could be obtained when the quantum number is four,
with output power of 130 mW and threshold current of 140 mA.
	%P 1452 - 1455