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Formation of (Ga,Mn)N Dilute Magnetic Semiconductor by Manganese Ion Implantation

Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari


Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: Ion implantation, gan, XRD, AFM, SQUID

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