The Incorporation of In in GaAsN as a Means of N Fraction Calibration

Authors: H. Hashim, B. F. Usher

Abstract:

InGaAsN and GaAsN epitaxial layers with similar nitrogen compositions in a sample were successfully grown on a GaAs (001) substrate by solid source molecular beam epitaxy. An electron cyclotron resonance nitrogen plasma source has been used to generate atomic nitrogen during the growth of the nitride layers. The indium composition changed from sample to sample to give compressive and tensile strained InGaAsN layers. Layer characteristics have been assessed by high-resolution x-ray diffraction to determine the relationship between the lattice constant of the GaAs1-yNy layer and the fraction x of In. The objective was to determine the In fraction x in an InxGa1-xAs1-yNy epitaxial layer which exactly cancels the strain present in a GaAs1-yNy epitaxial layer with the same nitrogen content when grown on a GaAs substrate.

Keywords: Indium, molecular beam epitaxy, nitrogen, straincancellation.

Digital Object Identifier (DOI): doi.org/10.5281/zenodo.1084330

References:

1] M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, "GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance,"Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers), vol. 35, pp. 1273-1275, 1996.
[2] M. Montes, A. Guzman, A. Trampert, and A. Hierro, "1.3 ╬╝m emitting GaInNAs/GaAs quantum well resonant cavity LEDs," Solid-State Electronics, vol. 54, pp. 492-496, Apr 2010.
[3] A. Khadour, S. Bouchoule, G. Aubin, J. C. Harmand, J. Decobert, and J. L. Oudar, "Ultrashort pulse generation from 1.56 ╬╝m mode-locked VECSEL at room temperature," Optics Express, vol. 18, pp. 19902- 19913, Sep 2010.
[4] S. M. Wang, H. Zhao, G. Adolfsson, Y. Q. Wei, Q. X. Zhao, J. S. Gustavsson, M. Sadeghi, and A. Larsson, "Dilute nitrides and 1.3 ╬╝m GaInNAs quantum well lasers on GaAs," Microelectronics Journal, vol. 40, pp. 386-391, March 2009.
[5] Y. Qu, H. Li, J. X. Zhang, B. X. Bo, X. Gao, and G. J. Liu, "High performance 1.3 ╬╝m InGaAsN superluminescent diodes," Science in China Series E-Technological Sciences, vol. 52, pp. 2396-2399, Aug 2009.
[6] M. Weyers, M. Sato, and H. Ando, "Red shift of photoluminescence and absorption in dilute GaAsN alloy layers," Japanese Journal of Applied Physics, Part 2 (Letters), vol. 31, pp. L853-L855, July 1992.
[7] M. Weyers and M. Sato, "Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3," Applied Physics Letters, vol. 62, pp. 1396-1398, March 1993.
[8] W. Lu, J. J. Lim, S. Bull, A. V. Andrianov, C. Staddon, C. T. Foxon, M. Sadeghi, S. M. Wang, A. Larsson, and E. C. Larkins, "Independent determination of In and N concentrations in GaInNAs alloys," Semiconductor Science and Technology, vol. 24, pp. 4, Oct 2009.
[9] J. Serafinczuk and J. Kozlowski, "Determination of indium and nitrogen content in four-component epitaxial layers of InxGa1-xAs 1-yNy deposited on GaAs substrate," Materials Science, vol. 26, pp. 207-212, 2008.
[10] Q. X. Zhao, S. M. Wang, M. Sadeghi, A. Larsson, M. Friesel, and M. Willander, "Nitrogen incorporation in GaNAs layers grown by molecular beam epitaxy," Applied Physics Letters, vol. 89, pp. 3, Jul 2006.
[11] H. Hashim and B. F. Usher, "Strain cancellation by indium incorporation for the calibration of nitrogen fractions in GaAsN," in 2010 IEEE International Conference on Semiconductor Electronics, pp. 8-11, June, 2010.
[12] B. F. Usher, T. Warminski, T. Dieing, and K. Prince, "Characterisation of a nitrogen ECR plasma source for the MBE growth of the dilute nitride semiconductor GaAsN," Surface Science, vol. 601, pp. 5800- 5802, Dec 2007.
[13] B. Usher, T. Warminski, T. Dieing, and K. Prince, "High temperature growth of the dilute nitride GaAsN using a nitrogen ECR plasma source," 2006 International Conference on Nanoscience and Nanotechnology (IEEE Cat. No.06EX1411), pp. 4, 2007.
[14] T. Dieing, "MBE growth of GaAsN using an ECR plasma source," PhD Thesis, La Trobe University, 2005, pp.77.
[15] J. W. Matthews and A. E. Blakeslee, "Defects in epitaxial multilayers. I. Misfit dislocations," Journal of Crystal Growth, vol. 27, pp. 118-125, Dec 1974.
[16] T. M. Brennan, J. Y. Tsao, and B. E. Hammons, "Reactive sticking of As4 during molecular beam homoepitaxy of GaAs, AlAs, and InAs, "Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 10, pp. 33-45, Jan-Feb 1992.
[17] O. Madelung, M. Schulz, and H. Weiss, "Technology of III-V, II-VI and non-tetrahedrally bonded compounds," in Landolt Börnstein (Numerical Data and Functional Relationships in Science and Technology). vol. 17, K. H. Hellwege and O. Madelung, Eds.: Springer, Berlin, 1984, pp. 13- 14.
[18] I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, "Band parameters for III-V compound semiconductors and their alloys," Journal of Applied Physics, vol. 89, pp. 5815-5875, Jun 2001.
[19] B. F. Usher, D. Zhou, S. C. Goh, T. Warminski, and X. P. Huang, "Poisson's ratio of GaAs," in Proc. Optoelectronic and Microelectronic Materials Devices, 1998, pp. 290-293.
[20] B. F. Usher and D. Zhou, "Thickness and composition determination of MBE grown strained multiple quantum well structures by x-ray diffraction," Proceedings of the SPIE - The International Society for Optical Engineering, vol. 4086, pp. 76-81, 2000.