%0 Journal Article
	%A AlNPhannee Saengkaew and  Armin Dadgar and  Juergen Blaesing and  Thomas Hempel and  Sakuntam Sanorpim and  Chanchana Thanachayanont and  Visittapong Yordsri and Watcharee Rattanasakulthong and  Alois Krost
	%D 2011
	%J International Journal of Materials and Metallurgical Engineering
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 59, 2011
	%T The Role of Ga to Improve AlN-Nucleation Layer for Al0.1Ga0.9N/Si(111)
	%U https://publications.waset.org/pdf/607
	%V 59
	%X Group-III nitride material as particularly AlxGa1-xN is
one of promising optoelectronic materials to require for shortwavelength
devices. To achieve the high-quality AlxGa1-xN films for
a high performance of such devices, AlN-nucleation layers are the
important factor. To improve the AlN-nucleation layers with a
variation of Ga-addition, XRD measurements were conducted to
analyze the crystalline quality of the subsequent Al0.1Ga0.9N with the
minimum ω-FWHMs of (0002) and (10-10) reflections of 425 arcsec
and 750 arcsec, respectively. SEM and AFM measurements were
performed to observe the surface morphology and TEM
measurements to identify the microstructures and orientations.
Results showed that the optimized Ga-atoms in the Al(Ga)Nnucleation
layers improved the surface diffusion to form moreuniform
crystallites in structure and size, better alignment of each
crystallite, and better homogeneity of island distribution. This, hence,
improves the orientation of epilayers on the Si-surface and finally
improves the crystalline quality and reduces the residual strain of
subsequent Al0.1Ga0.9N layers.
	%P 1073 - 1076