@article{(Open Science Index):https://publications.waset.org/pdf/12612,
	  title     = {The Role of Ga(Gallium)-flux and AlN(Aluminum Nitride) as the Interface Materials, between (Ga-face)GaN and (Siface)4H-SiC, through Molecular Dynamics Simulation},
	  author    = {Srikanta Bose and  Sudip K. Mazumder},
	  country	= {},
	  institution	= {},
	  abstract     = {We report here, the results of molecular dynamics
simulation of p-doped (Ga-face)GaN over n-doped (Siface)(
0001)4H-SiC hetero-epitaxial material system with one-layer
each of Ga-flux and (Al-face)AlN, as the interface materials, in the
form of, the total Density of States (DOS). It is found that the total
DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped
(Si-face)4H-SiC hetero-epitaxial system, with one layer of
(Al-face)AlN as the interface material, is comparatively higher than
that of the various cases studied, indicating that there could be good
vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC
hetero-epitaxial material system.},
	    journal   = {International Journal of Materials and Metallurgical Engineering},
	  volume    = {4},
	  number    = {10},
	  year      = {2010},
	  pages     = {660 - 663},
	  ee        = {https://publications.waset.org/pdf/12612},
	  url   	= {https://publications.waset.org/vol/46},
	  bibsource = {https://publications.waset.org/},
	  issn  	= {eISSN: 1307-6892},
	  publisher = {World Academy of Science, Engineering and Technology},
	  index 	= {Open Science Index 46, 2010},
	}