%0 Journal Article
	%A N.S. Pradhan and  S.K. Dubey and  A. D.Yadav and  Arvind Singh and  D.C. Kothari
	%D 2012
	%J International Journal of Physical and Mathematical Sciences
	%B World Academy of Science, Engineering and Technology
	%I Open Science Index 61, 2012
	%T Formation of (Ga,Mn)N Dilute Magnetic Semiconductor by Manganese Ion Implantation
	%U https://publications.waset.org/pdf/3376
	%V 61
	%X Un-doped GaN film of thickness 1.90 mm, grown on
sapphire substrate were uniformly implanted with 325 keV Mn+ ions
for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at
3500 C substrate temperature. The structural, morphological and
magnetic properties of Mn ion implanted gallium nitride samples
were studied using XRD, AFM and SQUID techniques. XRD of the
sample implanted with various ion fluences showed the presence of
different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N.
However, the compositions of these phases were found to be
depended on the ion fluence. AFM images of non-implanted sample
showed micrograph with rms surface roughness 2.17 nm. Whereas
samples implanted with the various fluences showed the presence of
nano clusters on the surface of GaN. The shape, size and density of
the clusters were found to vary with respect to ion fluence. Magnetic
moment versus applied field curves of the samples implanted with
various fluences exhibit the hysteresis loops. The Curie temperature
estimated from zero field cooled and field cooled curves for the
samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0
x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K
	%P 36 - 41